Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS Calculator

✖The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.ⓘ Process Transconductance Parameter in NMOS [k'_n]			+10% -10%
✖The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.ⓘ Width of Channel [W_c]			+10% -10%
✖Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.ⓘ Length of the Channel [L]			+10% -10%
✖Drain Source Voltage is an electrical term used in electronics and specifically in field-effect transistors . It refers to the voltage difference between the Drain and Source terminals of the FET.ⓘ Drain Source Voltage [V_ds]			+10% -10%

✖Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).ⓘ Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS [I_d]

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Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

Formula

`"I"_{"d"} = 1/2*"k'"_{"n"}*"W"_{"c"}/"L"*("V"_{"ds"})^2`

Example

`"236.883mA"=1/2*"2mS"*"10μm"/"3μm"*("8.43V")^2`

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Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2
I_d = 1/2*k'_n*W_c/L*(V_ds)^2
This formula uses 5 Variables

Variables Used

Drain Current in NMOS - (Measured in Ampere) - Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
Process Transconductance Parameter in NMOS - (Measured in Siemens) - The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Width of Channel - (Measured in Meter) - The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.
Length of the Channel - (Measured in Meter) - Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.
Drain Source Voltage - (Measured in Volt) - Drain Source Voltage is an electrical term used in electronics and specifically in field-effect transistors . It refers to the voltage difference between the Drain and Source terminals of the FET.

STEP 1: Convert Input(s) to Base Unit

Process Transconductance Parameter in NMOS: 2 Millisiemens --> 0.002 Siemens (Check conversion here)
Width of Channel: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Length of the Channel: 3 Micrometer --> 3E-06 Meter (Check conversion here)
Drain Source Voltage: 8.43 Volt --> 8.43 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_d = 1/2*k'_n*W_c/L*(V_ds)^2 --> 1/2*0.002*1E-05/3E-06*(8.43)^2

Evaluating ... ...

I_d = 0.236883

STEP 3: Convert Result to Output's Unit

0.236883 Ampere -->236.883 Milliampere (Check conversion here)

FINAL ANSWER

236.883 Milliampere <-- Drain Current in NMOS

(Calculation completed in 00.021 seconds)

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< 17 N-Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)

Body Effect in NMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Current Entering Drain Terminal of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)

NMOS as Linear Resistance

Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Drain Current when NMOS Operates as Voltage-Controlled Current Source

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Current Entering Drain-Source at Saturation Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Fabrication Process Parameter of NMOS

Go Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2

Electron Drift Velocity of Channel in NMOS Transistor

Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Total Power Supplied in NMOS

Go Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)

Drain Current given NMOS Operates as Voltage-Controlled Current Source

Go Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio

Output Resistance of Current Source NMOS given Drain Current

Go Output Resistance = Device Parameter/Drain Current without Channel Length Modulation

Total Power Dissipated in NMOS

Go Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance

Positive Voltage given Channel Length in NMOS

Go Voltage = Device Parameter*Length of the Channel

Oxide Capacitance of NMOS

Go Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS Formula

Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2
I_d = 1/2*k'_n*W_c/L*(V_ds)^2

What is NMOS?

NMOS (MOSFET) is a kind of MOSFET. An NMOS transistor consists of an n-type source and drain and a p-type substrate. When a voltage is applied to the gate, holes in the body (p-type substrate) are driven away from the gate. This allows the formation of an n-type channel between the source and the drain, and a current is conducted from electrons from the source to the drain through an induced n-type channel.

Logic gates and other digital devices implemented using NMOSs are said to have NMOS logic. There are three operating modes in an NMOS called cut-off, triode, and saturation. NMOS logic is easy to design and manufacture. Circuits with NMOS logic gates, however, consume static power when the circuit is idle since DC current flows through the logic gate when the output is low.

How to Calculate Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS?

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS calculator uses Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2 to calculate the Drain Current in NMOS, The Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS formula indicates the current conduction capability of the silicon chip; it can be used as a guide when comparing different devices. Drain Current in NMOS is denoted by I_d symbol.

How to calculate Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS using this online calculator? To use this online calculator for Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS, enter Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L) & Drain Source Voltage (V_ds) and hit the calculate button. Here is how the Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS calculation can be explained with given input values -> 236883 = 1/2*0.002*1E-05/3E-06*(8.43)^2.

FAQ

What is Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS?

The Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS formula indicates the current conduction capability of the silicon chip; it can be used as a guide when comparing different devices and is represented as I_d = 1/2*k'_n*W_c/L*(V_ds)^2 or Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2. The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor, The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel, Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location & Drain Source Voltage is an electrical term used in electronics and specifically in field-effect transistors . It refers to the voltage difference between the Drain and Source terminals of the FET.

How to calculate Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS?

The Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS formula indicates the current conduction capability of the silicon chip; it can be used as a guide when comparing different devices is calculated using Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2. To calculate Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS, you need Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L) & Drain Source Voltage (V_ds). With our tool, you need to enter the respective value for Process Transconductance Parameter in NMOS, Width of Channel, Length of the Channel & Drain Source Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Current in NMOS?

In this formula, Drain Current in NMOS uses Process Transconductance Parameter in NMOS, Width of Channel, Length of the Channel & Drain Source Voltage. We can use 5 other way(s) to calculate the same, which is/are as follows -

Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)
Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)
Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2
Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2
Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)

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