Drain Current given Device Parameter Calculator

✖Transconductance is the ratio of the change in current at the output terminal to the change in the voltage at the input terminal of an active device.ⓘ Transconductance [G_m]			+10% -10%
✖Aspect Ratio is the ratio of the width of the channel to the length of the channel.ⓘ Aspect Ratio [WL]			+10% -10%
✖Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed.ⓘ Effective Voltage [V_ov]			+10% -10%
✖Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.ⓘ Threshold Voltage [V_th]			+10% -10%
✖device parameter is the parameter used in calculation related to BJT.ⓘ Device Parameter [V_A]			+10% -10%
✖The voltage between drain and source is applied positive voltage between drain and source, having induced a channel.ⓘ Voltage between Drain and Source [V_DS]			+10% -10%

✖Drain Current below threshold voltage is defined as the subthreshold current and varies exponentially with gate to source voltage.ⓘ Drain Current given Device Parameter [I_d]

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Formula

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Drain Current given Device Parameter

Formula

`"I"_{"d"} = 1/2*"G"_{"m"}*"WL"*("V"_{"ov"}-"V"_{"th"})^2*(1+"V"_{"A"}*"V"_{"DS"})`

Example

`"3366.129mA"=1/2*"1.72mS"*"8.75"*("25V"-"5.50V")^2*(1+"0.024"*"7.35V")`

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Drain Current given Device Parameter Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current = 1/2*Transconductance*Aspect Ratio*(Effective Voltage-Threshold Voltage)^2*(1+Device Parameter*Voltage between Drain and Source)
I_d = 1/2*G_m*WL*(V_ov-V_th)^2*(1+V_A*V_DS)
This formula uses 7 Variables

Variables Used

Drain Current - (Measured in Ampere) - Drain Current below threshold voltage is defined as the subthreshold current and varies exponentially with gate to source voltage.
Transconductance - (Measured in Siemens) - Transconductance is the ratio of the change in current at the output terminal to the change in the voltage at the input terminal of an active device.
Aspect Ratio - Aspect Ratio is the ratio of the width of the channel to the length of the channel.
Effective Voltage - (Measured in Volt) - Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed.
Threshold Voltage - (Measured in Volt) - Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.
Device Parameter - device parameter is the parameter used in calculation related to BJT.
Voltage between Drain and Source - (Measured in Volt) - The voltage between drain and source is applied positive voltage between drain and source, having induced a channel.

STEP 1: Convert Input(s) to Base Unit

Transconductance: 1.72 Millisiemens --> 0.00172 Siemens (Check conversion here)
Aspect Ratio: 8.75 --> No Conversion Required
Effective Voltage: 25 Volt --> 25 Volt No Conversion Required
Threshold Voltage: 5.5 Volt --> 5.5 Volt No Conversion Required
Device Parameter: 0.024 --> No Conversion Required
Voltage between Drain and Source: 7.35 Volt --> 7.35 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_d = 1/2*G_m*WL*(V_ov-V_th)^2*(1+V_A*V_DS) --> 1/2*0.00172*8.75*(25-5.5)^2*(1+0.024*7.35)

Evaluating ... ...

I_d = 3.3661289025

STEP 3: Convert Result to Output's Unit

3.3661289025 Ampere -->3366.1289025 Milliampere (Check conversion here)

FINAL ANSWER

3366.1289025 ≈ 3366.129 Milliampere <-- Drain Current

(Calculation completed in 00.004 seconds)

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Birsa Institute of Technology (BIT), Sindri

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< 14 Base Current Calculators

Base Current using Saturation Current in DC

Go Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Collector Voltage/Thermal Voltage)+Saturation Vapour Pressure*e^(Base-Collector Voltage/Thermal Voltage)

Saturation Current using Doping Concentration

Go Saturation Current = (Cross-section Area of Base-Emitter Junction*[Charge-e]*Electron Diffusivity*(Intrinsic Carrier Concentration)^2)/(Width of Base Junction*Doping Concentration of Base)

Short Circuit Current Gain of BJT

Go Short-Circuit Current Gain = (Common-Emitter Current Gain at Low Frequency)/(1+Complex Frequency Variable*(Emitter-Base Capacitance+Collector-Base Junction Capacitance)*Input Resistance)

Drain Current given Device Parameter

Go Drain Current = 1/2*Transconductance*Aspect Ratio*(Effective Voltage-Threshold Voltage)^2*(1+Device Parameter*Voltage between Drain and Source)

Base Current 2 of BJT

Go Base Current = (Saturation Current/Common Emitter Current Gain)*(e^(Base-Emitter Voltage/Thermal Voltage))

Base Current of PNP Transistor using Saturation Current

Go Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage)

Reference Current of BJT Mirror

Go Reference Current = Collector Current+(2*Collector Current)/Common Emitter Current Gain

Reference Current of BJT Current Mirror

Go Reference Current = (Supply Voltage-Base-Emitter Voltage)/Resistance

Reference Current of BJT Mirror given Collector Current

Go Reference Current = Collector Current*(1+2/Common Emitter Current Gain)

Base Current of PNP Transistor given Emitter Current

Go Base Current = Emitter Current/(Common Emitter Current Gain+1)

Base Current of PNP Transistor using Collector Current

Go Base Current = Collector Current/Common Emitter Current Gain

Base Current 1 of BJT

Go Base Current = Collector Current/Common Emitter Current Gain

Base Current of PNP Transistor using Common-Base Current Gain

Go Base Current = (1-Common-Base Current Gain)*Emitter Current

Total Base Current

Go Base Current = Base Current 1+Base Current 2

Drain Current given Device Parameter Formula

Drain Current = 1/2*Transconductance*Aspect Ratio*(Effective Voltage-Threshold Voltage)^2*(1+Device Parameter*Voltage between Drain and Source)
I_d = 1/2*G_m*WL*(V_ov-V_th)^2*(1+V_A*V_DS)

What is drain current in MOSFET?

The drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Vgs characteristic is defined as the subthreshold slope, S, and is one of the most critical performance metrics for MOSFETs in logic applications.

How to Calculate Drain Current given Device Parameter?

Drain Current given Device Parameter calculator uses Drain Current = 1/2*Transconductance*Aspect Ratio*(Effective Voltage-Threshold Voltage)^2*(1+Device Parameter*Voltage between Drain and Source) to calculate the Drain Current, The Drain Current given Device Parameter is when the MOSFET is used to design an amplifier, it is operated in the saturation region. In saturation the drain current is constantly determined by V_GS (or V _OV ) and is independent of V_DS. That is, the MOSFET operates as a constant-current source where the value of the current is determined by V_GS. In effect, then, the MOSFET operates as a voltage-controlled current source. Drain Current is denoted by I_d symbol.

How to calculate Drain Current given Device Parameter using this online calculator? To use this online calculator for Drain Current given Device Parameter, enter Transconductance (G_m), Aspect Ratio (WL), Effective Voltage (V_ov), Threshold Voltage (V_th), Device Parameter (V_A) & Voltage between Drain and Source (V_DS) and hit the calculate button. Here is how the Drain Current given Device Parameter calculation can be explained with given input values -> 3.4E+6 = 1/2*0.00172*8.75*(25-5.5)^2*(1+0.024*7.35).

FAQ

What is Drain Current given Device Parameter?

The Drain Current given Device Parameter is when the MOSFET is used to design an amplifier, it is operated in the saturation region. In saturation the drain current is constantly determined by V_GS (or V _OV ) and is independent of V_DS. That is, the MOSFET operates as a constant-current source where the value of the current is determined by V_GS. In effect, then, the MOSFET operates as a voltage-controlled current source and is represented as I_d = 1/2*G_m*WL*(V_ov-V_th)^2*(1+V_A*V_DS) or Drain Current = 1/2*Transconductance*Aspect Ratio*(Effective Voltage-Threshold Voltage)^2*(1+Device Parameter*Voltage between Drain and Source). Transconductance is the ratio of the change in current at the output terminal to the change in the voltage at the input terminal of an active device, Aspect Ratio is the ratio of the width of the channel to the length of the channel, Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed, Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals, device parameter is the parameter used in calculation related to BJT & The voltage between drain and source is applied positive voltage between drain and source, having induced a channel.

How to calculate Drain Current given Device Parameter?

The Drain Current given Device Parameter is when the MOSFET is used to design an amplifier, it is operated in the saturation region. In saturation the drain current is constantly determined by V_GS (or V _OV ) and is independent of V_DS. That is, the MOSFET operates as a constant-current source where the value of the current is determined by V_GS. In effect, then, the MOSFET operates as a voltage-controlled current source is calculated using Drain Current = 1/2*Transconductance*Aspect Ratio*(Effective Voltage-Threshold Voltage)^2*(1+Device Parameter*Voltage between Drain and Source). To calculate Drain Current given Device Parameter, you need Transconductance (G_m), Aspect Ratio (WL), Effective Voltage (V_ov), Threshold Voltage (V_th), Device Parameter (V_A) & Voltage between Drain and Source (V_DS). With our tool, you need to enter the respective value for Transconductance, Aspect Ratio, Effective Voltage, Threshold Voltage, Device Parameter & Voltage between Drain and Source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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