Effective Density State in Valence Band Solution

STEP 0: Pre-Calculation Summary
Formula Used
Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)
Nv = p0/(1-fE)
This formula uses 3 Variables
Variables Used
Effective Density of State in Valence Band - (Measured in 1 per Cubic Meter) - Effective Density of State in Valence Band is defined as the band of electron orbitals that electrons can jump out of, moving into the conduction band when excited.
Holes Concentration in Valance Band - (Measured in 1 per Cubic Meter) - Holes Concentration in Valance Band refers to the quantity or abundance of holes present in the valence band of a semiconductor material.
Fermi Function - Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.
STEP 1: Convert Input(s) to Base Unit
Holes Concentration in Valance Band: 230000000000 1 per Cubic Meter --> 230000000000 1 per Cubic Meter No Conversion Required
Fermi Function: 0.022 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Nv = p0/(1-fE) --> 230000000000/(1-0.022)
Evaluating ... ...
Nv = 235173824130.879
STEP 3: Convert Result to Output's Unit
235173824130.879 1 per Cubic Meter --> No Conversion Required
FINAL ANSWER
235173824130.879 2.4E+11 1 per Cubic Meter <-- Effective Density of State in Valence Band
(Calculation completed in 00.004 seconds)

Credits

Created by Shobhit Dimri
Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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20 Energy Band & Charge Carrier Calculators

Intrinsic Carrier Concentration
Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band) *exp(-Energy Gap/(2*[BoltZ]*Temperature))
Carrier Lifetime
Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))
Energy of Electron given Coulomb's Constant
Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)
Steady State Electron Concentration
Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration
Effective Density of State
Go Effective Density of State in Conduction Band = Electron Concentration in Conduction Band/Fermi Function
Fermi Function
Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band
Concentration in Conduction Band
Go Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function
Effective Density State in Valence Band
Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)
Recombination Lifetime
Go Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1
Concentration of Holes in Valence Band
Go Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)
Thermal Generation Rate
Go Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration ^2)
Distribution Coefficient
Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid
Liquid Concentration
Go Impurity Concentration in Liquid = Impurity Concentration in Solid/Distribution Coefficient
Net Rate of Change in Conduction Band
Go Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)
Excess Carrier Concentration
Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime
Optical Generation Rate
Go Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime
Photoelectron Energy
Go Photoelectron Energy = [hP]*Frequency of Incident Light
Conduction Band Energy
Go Conduction Band Energy = Energy Gap+Valence Band Energy
Valence Band Energy
Go Valence Band Energy = Conduction Band Energy-Energy Gap
Energy Gap
Go Energy Gap = Conduction Band Energy-Valence Band Energy

15 Semiconductor Carriers Calculators

Intrinsic Carrier Concentration
Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band) *exp(-Energy Gap/(2*[BoltZ]*Temperature))
Carrier Lifetime
Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))
Radius of Nth Orbit of Electron
Go Radius of nth Orbit of Electron = ([Coulomb]*Quantum Number^2*[hP]^2)/(Mass of Particle*[Charge-e]^2)
Quantum State
Go Energy in Quantum State = (Quantum Number^2*pi^2*[hP]^2)/(2*Mass of Particle*Potential Well Length^2)
Electron Flux Density
Go Electron Flux Density = (Mean Free Path Electron/(2*Time))*Difference in Electron Concentration
Fermi Function
Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band
Effective Density State in Valence Band
Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)
Distribution Coefficient
Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid
Electron Multiplication
Go Electron Multiplication = Number of Electron Out of Region/Number of Electron in Region
Excess Carrier Concentration
Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime
Electron Current Density
Go Electron Current Density = Total Carrier Current Density-Hole Current Density
Hole Current Density
Go Hole Current Density = Total Carrier Current Density-Electron Current Density
Mean Time Spend by Hole
Go Mean Time Spend by Hole = Optical Generation Rate*Majority Carrier Decay
Photoelectron Energy
Go Photoelectron Energy = [hP]*Frequency of Incident Light
Conduction Band Energy
Go Conduction Band Energy = Energy Gap+Valence Band Energy

Effective Density State in Valence Band Formula

Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)
Nv = p0/(1-fE)

How do you determine the effective density of states in conduction band?

The effective density of states is temperature dependent and can be obtained from: Nc(T) = Nc(300K) (T/300) 3/2 where Nc(300K) is the effective density of states at 300K

How to Calculate Effective Density State in Valence Band?

Effective Density State in Valence Band calculator uses Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function) to calculate the Effective Density of State in Valence Band, The Effective Density State in Valence Band formula is defined as the band of electron orbitals that electrons can jump out of, moving into the conduction band when excited. The valence band is simply the outermost electron orbital of an atom of any specific material that electrons actually occupy. Effective Density of State in Valence Band is denoted by Nv symbol.

How to calculate Effective Density State in Valence Band using this online calculator? To use this online calculator for Effective Density State in Valence Band, enter Holes Concentration in Valance Band (p0) & Fermi Function (fE) and hit the calculate button. Here is how the Effective Density State in Valence Band calculation can be explained with given input values -> 2.4E+11 = 230000000000/(1-0.022) .

FAQ

What is Effective Density State in Valence Band?
The Effective Density State in Valence Band formula is defined as the band of electron orbitals that electrons can jump out of, moving into the conduction band when excited. The valence band is simply the outermost electron orbital of an atom of any specific material that electrons actually occupy and is represented as Nv = p0/(1-fE) or Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function). Holes Concentration in Valance Band refers to the quantity or abundance of holes present in the valence band of a semiconductor material & Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.
How to calculate Effective Density State in Valence Band?
The Effective Density State in Valence Band formula is defined as the band of electron orbitals that electrons can jump out of, moving into the conduction band when excited. The valence band is simply the outermost electron orbital of an atom of any specific material that electrons actually occupy is calculated using Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function). To calculate Effective Density State in Valence Band, you need Holes Concentration in Valance Band (p0) & Fermi Function (fE). With our tool, you need to enter the respective value for Holes Concentration in Valance Band & Fermi Function and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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