Electron Drift Velocity of Channel in NMOS Transistor Calculator

✖The mobility of electrons at surface of channel refers to the ability of electrons to move or conduct within a material's surface layer when subjected to an electric field.ⓘ Mobility of Electrons at Surface of Channel [μ_n]			+10% -10%
✖The electric field across length of channel is the force per unit charge that a particle experiences as it moves through the channel.ⓘ Electric Field across Length of Channel [E_L]			+10% -10%

✖Electron Drift Velocity is because of the electric field that in turn causes the channel electrons to drift toward the drain with a velocity.ⓘ Electron Drift Velocity of Channel in NMOS Transistor [v_d]

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Formula

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Electron Drift Velocity of Channel in NMOS Transistor

Formula

`"v"_{"d"} = "μ"_{"n"}*"E"_{"L"}`

Example

`"23.32m/s"="2.2m²/V*s"*"10.6V"`

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Electron Drift Velocity of Channel in NMOS Transistor Solution

STEP 0: Pre-Calculation Summary

Formula Used

Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel
v_d = μ_n*E_L
This formula uses 3 Variables

Variables Used

Electron Drift Velocity - (Measured in Meter per Second) - Electron Drift Velocity is because of the electric field that in turn causes the channel electrons to drift toward the drain with a velocity.
Mobility of Electrons at Surface of Channel - (Measured in Square Meter per Volt per Second) - The mobility of electrons at surface of channel refers to the ability of electrons to move or conduct within a material's surface layer when subjected to an electric field.
Electric Field across Length of Channel - (Measured in Volt) - The electric field across length of channel is the force per unit charge that a particle experiences as it moves through the channel.

STEP 1: Convert Input(s) to Base Unit

Mobility of Electrons at Surface of Channel: 2.2 Square Meter per Volt per Second --> 2.2 Square Meter per Volt per Second No Conversion Required
Electric Field across Length of Channel: 10.6 Volt --> 10.6 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

v_d = μ_n*E_L --> 2.2*10.6

Evaluating ... ...

v_d = 23.32

STEP 3: Convert Result to Output's Unit

23.32 Meter per Second --> No Conversion Required

FINAL ANSWER

23.32 Meter per Second <-- Electron Drift Velocity

(Calculation completed in 00.004 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » N-Channel Enhancement » Electron Drift Velocity of Channel in NMOS Transistor

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< 17 N-Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)

Body Effect in NMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Current Entering Drain Terminal of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)

NMOS as Linear Resistance

Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Drain Current when NMOS Operates as Voltage-Controlled Current Source

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Current Entering Drain-Source at Saturation Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Fabrication Process Parameter of NMOS

Go Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2

Electron Drift Velocity of Channel in NMOS Transistor

Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Total Power Supplied in NMOS

Go Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)

Drain Current given NMOS Operates as Voltage-Controlled Current Source

Go Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio

Output Resistance of Current Source NMOS given Drain Current

Go Output Resistance = Device Parameter/Drain Current without Channel Length Modulation

Total Power Dissipated in NMOS

Go Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance

Positive Voltage given Channel Length in NMOS

Go Voltage = Device Parameter*Length of the Channel

Oxide Capacitance of NMOS

Go Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness

Electron Drift Velocity of Channel in NMOS Transistor Formula

Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel
v_d = μ_n*E_L

Explain working of NMOS transistor.

An NMOS transistor with the voltage across gas source> threshold voltage and with a small voltage between the drain and source applied. The device acts as a resistance whose value is determined by the voltage across the gas source. Specifically, the channel conductance is proportional to the voltage across the gas source – threshold voltage, and thus Id is proportional to (voltage across the gas source – threshold voltage)voltage between the drain and source

What is mobility of electron in channel ?

μ_n is the mobility of the electrons at the surface of the channel. It is a physical parameter
whose value depends on the fabrication process technology.

How to Calculate Electron Drift Velocity of Channel in NMOS Transistor?

Electron Drift Velocity of Channel in NMOS Transistor calculator uses Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel to calculate the Electron Drift Velocity, The Electron Drift Velocity of Channel in NMOS Transistor is because of the electric field that in turn causes the channel electrons to drift toward the drain with a velocity. Electron Drift Velocity is denoted by v_d symbol.

How to calculate Electron Drift Velocity of Channel in NMOS Transistor using this online calculator? To use this online calculator for Electron Drift Velocity of Channel in NMOS Transistor, enter Mobility of Electrons at Surface of Channel (μ_n) & Electric Field across Length of Channel (E_L) and hit the calculate button. Here is how the Electron Drift Velocity of Channel in NMOS Transistor calculation can be explained with given input values -> 23.32 = 2.2*10.6.

FAQ

What is Electron Drift Velocity of Channel in NMOS Transistor?

The Electron Drift Velocity of Channel in NMOS Transistor is because of the electric field that in turn causes the channel electrons to drift toward the drain with a velocity and is represented as v_d = μ_n*E_L or Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel. The mobility of electrons at surface of channel refers to the ability of electrons to move or conduct within a material's surface layer when subjected to an electric field & The electric field across length of channel is the force per unit charge that a particle experiences as it moves through the channel.

How to calculate Electron Drift Velocity of Channel in NMOS Transistor?

The Electron Drift Velocity of Channel in NMOS Transistor is because of the electric field that in turn causes the channel electrons to drift toward the drain with a velocity is calculated using Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel. To calculate Electron Drift Velocity of Channel in NMOS Transistor, you need Mobility of Electrons at Surface of Channel (μ_n) & Electric Field across Length of Channel (E_L). With our tool, you need to enter the respective value for Mobility of Electrons at Surface of Channel & Electric Field across Length of Channel and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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