Gate Length using Gate Oxide Capacitance Calculator

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VLSI Material Optimization

Analog VLSI Design

✖Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.ⓘ Gate Capacitance [C_g]			+10% -10%
✖Capacitance of Gate Oxide Layer is defined as the capacitance of the gate terminal of a field-effect transistor.ⓘ Capacitance of Gate Oxide Layer [C_ox]			+10% -10%
✖Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS.ⓘ Gate Width [W_g]			+10% -10%

✖Gate Length is the measurement or extent of something from end to end.ⓘ Gate Length using Gate Oxide Capacitance [L_g]

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Formula

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Gate Length using Gate Oxide Capacitance

Formula

`"L"_{"g"} = "C"_{"g"}/("C"_{"ox"}*"W"_{"g"})`

Example

`"7.011663mm"="59.61μF"/("29.83μF/mm²"*"0.285mm")`

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Gate Length using Gate Oxide Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)
L_g = C_g/(C_ox*W_g)
This formula uses 4 Variables

Variables Used

Gate Length - (Measured in Meter) - Gate Length is the measurement or extent of something from end to end.
Gate Capacitance - (Measured in Farad) - Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.
Capacitance of Gate Oxide Layer - (Measured in Farad per Square Meter) - Capacitance of Gate Oxide Layer is defined as the capacitance of the gate terminal of a field-effect transistor.
Gate Width - (Measured in Meter) - Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS.

STEP 1: Convert Input(s) to Base Unit

Gate Capacitance: 59.61 Microfarad --> 5.961E-05 Farad (Check conversion here)
Capacitance of Gate Oxide Layer: 29.83 Microfarad per Square Millimeter --> 29.83 Farad per Square Meter (Check conversion here)
Gate Width: 0.285 Millimeter --> 0.000285 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

L_g = C_g/(C_ox*W_g) --> 5.961E-05/(29.83*0.000285)

Evaluating ... ...

L_g = 0.00701166257917674

STEP 3: Convert Result to Output's Unit

0.00701166257917674 Meter -->7.01166257917674 Millimeter (Check conversion here)

FINAL ANSWER

7.01166257917674 ≈ 7.011663 Millimeter <-- Gate Length

(Calculation completed in 00.004 seconds)

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Bulk Depletion Region Charge Density VLSI

Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

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Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

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Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

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Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

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Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

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Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

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Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

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Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

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Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

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Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Gate Length using Gate Oxide Capacitance Formula

Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)
L_g = C_g/(C_ox*W_g)

What are applications of Oxide Layer in VLSI?

The oxide layer in has key applications in semiconductor devices. It serves as a gate insulator in MOS transistors, enabling the control of electron flow. Additionally, it acts as an electrical isolation layer between different components and interconnects, ensuring reliable and efficient operation of integrated circuits in applications such as microprocessors, memory devices, and sensors.

How to Calculate Gate Length using Gate Oxide Capacitance?

Gate Length using Gate Oxide Capacitance calculator uses Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width) to calculate the Gate Length, The Gate Length using gate Oxide Capacitance defined the path that links the charge carriers between the drain and the source. If you exclude the physical overlapping in the structure, gate length and channel length would be very close. Gate Length is denoted by L_g symbol.

How to calculate Gate Length using Gate Oxide Capacitance using this online calculator? To use this online calculator for Gate Length using Gate Oxide Capacitance, enter Gate Capacitance (C_g), Capacitance of Gate Oxide Layer (C_ox) & Gate Width (W_g) and hit the calculate button. Here is how the Gate Length using Gate Oxide Capacitance calculation can be explained with given input values -> 6969.607 = 5.961E-05/(29.83*0.000285).

FAQ

What is Gate Length using Gate Oxide Capacitance?

The Gate Length using gate Oxide Capacitance defined the path that links the charge carriers between the drain and the source. If you exclude the physical overlapping in the structure, gate length and channel length would be very close and is represented as L_g = C_g/(C_ox*W_g) or Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width). Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor, Capacitance of Gate Oxide Layer is defined as the capacitance of the gate terminal of a field-effect transistor & Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS.

How to calculate Gate Length using Gate Oxide Capacitance?

The Gate Length using gate Oxide Capacitance defined the path that links the charge carriers between the drain and the source. If you exclude the physical overlapping in the structure, gate length and channel length would be very close is calculated using Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width). To calculate Gate Length using Gate Oxide Capacitance, you need Gate Capacitance (C_g), Capacitance of Gate Oxide Layer (C_ox) & Gate Width (W_g). With our tool, you need to enter the respective value for Gate Capacitance, Capacitance of Gate Oxide Layer & Gate Width and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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