Magnitude of Electron Charge in Channel of MOSFET Calculator

✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).ⓘ Channel Width [W_c]			+10% -10%
✖Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).ⓘ Channel Length [L]			+10% -10%
✖The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.ⓘ Effective Voltage [V_eff]			+10% -10%

✖Electron Charge in Channel refers to the amount of charge carried by an electron in the conduction band of the semiconductor material used in the device.ⓘ Magnitude of Electron Charge in Channel of MOSFET [Q_e]

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Magnitude of Electron Charge in Channel of MOSFET

Formula

`"Q"_{"e"} = "C"_{"ox"}*"W"_{"c"}*"L"*"V"_{"eff"}`

Example

`"1.598pC"="940μF"*"10μm"*"100μm"*"1.7V"`

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Magnitude of Electron Charge in Channel of MOSFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Electron Charge in Channel = Oxide Capacitance*Channel Width*Channel Length*Effective Voltage
Q_e = C_ox*W_c*L*V_eff
This formula uses 5 Variables

Variables Used

Electron Charge in Channel - (Measured in Coulomb) - Electron Charge in Channel refers to the amount of charge carried by an electron in the conduction band of the semiconductor material used in the device.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Channel Width - (Measured in Meter) - Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).
Channel Length - (Measured in Meter) - Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).
Effective Voltage - (Measured in Volt) - The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.

STEP 1: Convert Input(s) to Base Unit

Oxide Capacitance: 940 Microfarad --> 0.00094 Farad (Check conversion here)
Channel Width: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Channel Length: 100 Micrometer --> 0.0001 Meter (Check conversion here)
Effective Voltage: 1.7 Volt --> 1.7 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

Q_e = C_ox*W_c*L*V_eff --> 0.00094*1E-05*0.0001*1.7

Evaluating ... ...

Q_e = 1.598E-12

STEP 3: Convert Result to Output's Unit

1.598E-12 Coulomb -->1.598 Picocoulomb (Check conversion here)

FINAL ANSWER

1.598 Picocoulomb <-- Electron Charge in Channel

(Calculation completed in 00.004 seconds)

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< 15 Internal Capacitive Effects and High Frequency Model Calculators

Conductance of Channel of MOSFETs

Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*(Channel Width/Channel Length)*Voltage across Oxide

Transition Frequency of MOSFET

Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))

Magnitude of Electron Charge in Channel of MOSFET

Go Electron Charge in Channel = Oxide Capacitance*Channel Width*Channel Length*Effective Voltage

Lower Critical Frequency of Mosfet

Go Corner Frequency = 1/(2*pi*(Resistance+Input Resistance)*Capacitance)

Phase Shift in Output RC Circuit

Go Phase Shift = arctan(Capacitive Reactance/(Resistance+Load Resistance))

Output Miller Capacitance Mosfet

Go Output Miller Capacitance = Gate-Drain Capacitance*((Voltage Gain+1)/Voltage Gain)

Total Capacitance between Gate and Channel of MOSFETs

Go Gate Channel Capacitance = Oxide Capacitance*Channel Width*Channel Length

Gate to Source Channel Width of MOSFET

Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)

Overlap Capacitance of MOSFET

Go Overlap Capacitance = Channel Width*Oxide Capacitance*Overlap Length

Critical Frequency in High Frequency Input RC Circuit

Go Corner Frequency = 1/(2*pi*Input Resistance*Miller Capacitance)

Phase Shift in Input RC Circuit

Go Phase Shift = arctan(Capacitive Reactance/Input Resistance)

Capacitive Reactance of Mosfet

Go Capacitive Reactance = 1/(2*pi*Frequency*Capacitance)

Critical Frequency of Mosfet

Go Critical Frequency in decibles = 10*log10(Critical Frequency)

Miller Capacitance of Mosfet

Go Miller Capacitance = Gate-Drain Capacitance*(Voltage Gain+1)

Attenuation of RC Circuit

Go Attenuation = Base Voltage/Input Voltage

Magnitude of Electron Charge in Channel of MOSFET Formula

Electron Charge in Channel = Oxide Capacitance*Channel Width*Channel Length*Effective Voltage
Q_e = C_ox*W_c*L*V_eff

Explain the whole process of the channel region of the MOSFET forming a parallel-plate capacitor.

The gate and the channel region of the MOSFET form a parallel-plate capacitor, with the oxide layer acting as the capacitor dielectric. The positive gate voltage causes a positive charge to accumulate on the top plate of the capacitor (the gate electrode). The corresponding negative charge on the bottom plate is formed by the electrons in the induced channel. An electric field thus develops in the vertical direction. It is this field that controls the amount of charge in the channel, and thus it determines the channel conductivity and, in turn, the current that will flow through the channel when a voltage is applied.

How to Calculate Magnitude of Electron Charge in Channel of MOSFET?

Magnitude of Electron Charge in Channel of MOSFET calculator uses Electron Charge in Channel = Oxide Capacitance*Channel Width*Channel Length*Effective Voltage to calculate the Electron Charge in Channel, The Magnitude of Electron Charge in Channel of MOSFET is given by |Q| = Cox (WL)Vov where Cox, called the oxide capacitance, is the capacitance of the parallel-plate capacitor per unit gate area (in units of F/m²), W is the width of the channel, and L is the length of the channel. Electron Charge in Channel is denoted by Q_e symbol.

How to calculate Magnitude of Electron Charge in Channel of MOSFET using this online calculator? To use this online calculator for Magnitude of Electron Charge in Channel of MOSFET, enter Oxide Capacitance (C_ox), Channel Width (W_c), Channel Length (L) & Effective Voltage (V_eff) and hit the calculate button. Here is how the Magnitude of Electron Charge in Channel of MOSFET calculation can be explained with given input values -> 1.6E+12 = 0.00094*1E-05*0.0001*1.7.

FAQ

What is Magnitude of Electron Charge in Channel of MOSFET?

The Magnitude of Electron Charge in Channel of MOSFET is given by |Q| = Cox (WL)Vov where Cox, called the oxide capacitance, is the capacitance of the parallel-plate capacitor per unit gate area (in units of F/m²), W is the width of the channel, and L is the length of the channel and is represented as Q_e = C_ox*W_c*L*V_eff or Electron Charge in Channel = Oxide Capacitance*Channel Width*Channel Length*Effective Voltage. Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits, Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz), Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET) & The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.

How to calculate Magnitude of Electron Charge in Channel of MOSFET?

The Magnitude of Electron Charge in Channel of MOSFET is given by |Q| = Cox (WL)Vov where Cox, called the oxide capacitance, is the capacitance of the parallel-plate capacitor per unit gate area (in units of F/m²), W is the width of the channel, and L is the length of the channel is calculated using Electron Charge in Channel = Oxide Capacitance*Channel Width*Channel Length*Effective Voltage. To calculate Magnitude of Electron Charge in Channel of MOSFET, you need Oxide Capacitance (C_ox), Channel Width (W_c), Channel Length (L) & Effective Voltage (V_eff). With our tool, you need to enter the respective value for Oxide Capacitance, Channel Width, Channel Length & Effective Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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