Majority Carrier Concentration in Semiconductor for p-type Calculator

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✖Intrinsic Carrier Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.ⓘ Intrinsic Carrier Concentration [n_i]			+10% -10%
✖Minority Carrier Concentration is the number of carriers in the valence band with no externally applied bias.ⓘ Minority Carrier Concentration [p₀]			+10% -10%

✖Majority Carrier Concentration is the number of carriers in the conduction band with no externally applied bias.ⓘ Majority Carrier Concentration in Semiconductor for p-type [n₀]

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Majority Carrier Concentration in Semiconductor for p-type

Formula

`"n"_{"0"} = "n"_{"i"}^2/"p"_{"0"}`

Example

`"1.6E^8/m³"=("1.2e8/m³")^2/"9.1e7/m³"`

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Download Semiconductor Characteristics Formulas PDF

Majority Carrier Concentration in Semiconductor for p-type Solution

STEP 0: Pre-Calculation Summary

Formula Used

Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration
n₀ = n_i^2/p₀
This formula uses 3 Variables

Variables Used

Majority Carrier Concentration - (Measured in 1 per Cubic Meter) - Majority Carrier Concentration is the number of carriers in the conduction band with no externally applied bias.
Intrinsic Carrier Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Carrier Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
Minority Carrier Concentration - (Measured in 1 per Cubic Meter) - Minority Carrier Concentration is the number of carriers in the valence band with no externally applied bias.

STEP 1: Convert Input(s) to Base Unit

Intrinsic Carrier Concentration: 120000000 1 per Cubic Meter --> 120000000 1 per Cubic Meter No Conversion Required
Minority Carrier Concentration: 91000000 1 per Cubic Meter --> 91000000 1 per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

n₀ = n_i^2/p₀ --> 120000000^2/91000000

Evaluating ... ...

n₀ = 158241758.241758

STEP 3: Convert Result to Output's Unit

158241758.241758 1 per Cubic Meter --> No Conversion Required

FINAL ANSWER

158241758.241758 ≈ 1.6E+8 1 per Cubic Meter <-- Majority Carrier Concentration

(Calculation completed in 00.004 seconds)

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Created by Akshada Kulkarni

National Institute of Information Technology (NIIT), Neemrana

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< 13 Semiconductor Characteristics Calculators

Conductivity in Semiconductors

Go Conductivity = (Electron Density*[Charge-e]*Mobility of Electron)+(Holes Density*[Charge-e]*Mobility of Holes)

Fermi Dirac Distribution Function

Go Fermi Dirac Distribution Function = 1/(1+e^((Fermi Level Energy-Fermi Level Energy)/([BoltZ]*Temperature)))

Conductivity of Extrinsic Semiconductors for N-type

Go Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron

Conductivity of Extrinsic Semiconductor for P-Type

Go Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes

Electron Diffusion Length

Go Electron Diffusion Length = sqrt(Electron Diffusion Constant*Minority Carrier Lifetime)

Energy Band Gap

Go Energy Band Gap = Energy Band Gap at 0K-(Temperature*Material Specific Constant)

Majority Carrier Concentration in Semiconductor for p-type

Go Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration

Majority Carrier Concentration in Semiconductor

Go Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration

Fermi Level of Intrinsic Semiconductors

Go Fermi Level Intrinsic Semiconductor = (Conduction Band Energy+Valance Band Energy)/2

Drift Current Density

Go Drift Current Density = Holes Current Density+Electron Current Density

Mobility of Charge Carriers

Go Charge Carriers Mobility = Drift Speed/Electric Field Intensity

Saturation Voltage using Threshold Voltage

Go Saturation Voltage = Gate Source Voltage-Threshold Voltage

Electric Field due to Hall Voltage

Go Hall Electric Field = Hall Voltage/Conductor Width

Majority Carrier Concentration in Semiconductor for p-type Formula

Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration
n₀ = n_i^2/p₀

How is majority carrier concentration affected by donor impurity concentration?

the thermal-equilibrium majority carrier electron concentration is essentially equal to the donor impurity concentration. The thermal-equilibrium majority and minority carrier concentrations can differ by many orders of magnitude.
If the donor impurity concentration is not too different in magnitude from the intrinsic carrier concentration, the thermal-equilibrium majority carrier electron concentration is influenced by the intrinsic concentration.

How to Calculate Majority Carrier Concentration in Semiconductor for p-type?

Majority Carrier Concentration in Semiconductor for p-type calculator uses Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration to calculate the Majority Carrier Concentration, Majority carrier concentration in Semiconductor for p-type is the thermal equilibrium concentration of the holes in the conduction band. Majority Carrier Concentration is denoted by n₀ symbol.

How to calculate Majority Carrier Concentration in Semiconductor for p-type using this online calculator? To use this online calculator for Majority Carrier Concentration in Semiconductor for p-type, enter Intrinsic Carrier Concentration (n_i) & Minority Carrier Concentration (p₀) and hit the calculate button. Here is how the Majority Carrier Concentration in Semiconductor for p-type calculation can be explained with given input values -> 109.8901 = 120000000^2/91000000.

FAQ

What is Majority Carrier Concentration in Semiconductor for p-type?

Majority carrier concentration in Semiconductor for p-type is the thermal equilibrium concentration of the holes in the conduction band and is represented as n₀ = n_i^2/p₀ or Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration. Intrinsic Carrier Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material & Minority Carrier Concentration is the number of carriers in the valence band with no externally applied bias.

How to calculate Majority Carrier Concentration in Semiconductor for p-type?

Majority carrier concentration in Semiconductor for p-type is the thermal equilibrium concentration of the holes in the conduction band is calculated using Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration. To calculate Majority Carrier Concentration in Semiconductor for p-type, you need Intrinsic Carrier Concentration (n_i) & Minority Carrier Concentration (p₀). With our tool, you need to enter the respective value for Intrinsic Carrier Concentration & Minority Carrier Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Majority Carrier Concentration?

In this formula, Majority Carrier Concentration uses Intrinsic Carrier Concentration & Minority Carrier Concentration. We can use 1 other way(s) to calculate the same, which is/are as follows -

Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration

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