Output Resistance of Current Source NMOS given Drain Current Calculator

✖Device parameter is the parameter used in calculation related to MOSFET.VA is proportional to the channel length L that the designer selects for a MOSFET.ⓘ Device Parameter [V_A]			+10% -10%
✖Drain Current without Channel Length Modulation means that the saturation-region drain current will increase slightly as the drain-to-source voltage increases.ⓘ Drain Current without Channel Length Modulation [I_D']			+10% -10%

✖Output resistance refers to the resistance of an electronic circuit to the flow of current when a load is connected to its output.ⓘ Output Resistance of Current Source NMOS given Drain Current [R_out]

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Output Resistance of Current Source NMOS given Drain Current

Formula

`"R"_{"out"} = "V"_{"A"}/("I"_{"D"}"'")`

Example

`"1.25kΩ"="4V"/"3.2mA"`

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Output Resistance of Current Source NMOS given Drain Current Solution

STEP 0: Pre-Calculation Summary

Formula Used

Output Resistance = Device Parameter/Drain Current without Channel Length Modulation
R_out = V_A/I_D'
This formula uses 3 Variables

Variables Used

Output Resistance - (Measured in Ohm) - Output resistance refers to the resistance of an electronic circuit to the flow of current when a load is connected to its output.
Device Parameter - (Measured in Volt) - Device parameter is the parameter used in calculation related to MOSFET.VA is proportional to the channel length L that the designer selects for a MOSFET.
Drain Current without Channel Length Modulation - (Measured in Ampere) - Drain Current without Channel Length Modulation means that the saturation-region drain current will increase slightly as the drain-to-source voltage increases.

STEP 1: Convert Input(s) to Base Unit

Device Parameter: 4 Volt --> 4 Volt No Conversion Required
Drain Current without Channel Length Modulation: 3.2 Milliampere --> 0.0032 Ampere (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

R_out = V_A/I_D' --> 4/0.0032

Evaluating ... ...

R_out = 1250

STEP 3: Convert Result to Output's Unit

1250 Ohm -->1.25 Kilohm (Check conversion here)

FINAL ANSWER

1.25 Kilohm <-- Output Resistance

(Calculation completed in 00.004 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » N-Channel Enhancement » Output Resistance of Current Source NMOS given Drain Current

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< 17 N-Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)

Body Effect in NMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Current Entering Drain Terminal of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)

NMOS as Linear Resistance

Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Drain Current when NMOS Operates as Voltage-Controlled Current Source

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Current Entering Drain-Source at Saturation Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Fabrication Process Parameter of NMOS

Go Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2

Electron Drift Velocity of Channel in NMOS Transistor

Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Total Power Supplied in NMOS

Go Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)

Drain Current given NMOS Operates as Voltage-Controlled Current Source

Go Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio

Output Resistance of Current Source NMOS given Drain Current

Go Output Resistance = Device Parameter/Drain Current without Channel Length Modulation

Total Power Dissipated in NMOS

Go Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance

Positive Voltage given Channel Length in NMOS

Go Voltage = Device Parameter*Length of the Channel

Oxide Capacitance of NMOS

Go Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness

Output Resistance of Current Source NMOS given Drain Current Formula

Output Resistance = Device Parameter/Drain Current without Channel Length Modulation
R_out = V_A/I_D'

What is a MOSFET and how it works?

In general, the MOSFET works as a switch, the MOSFET controls the voltage and current flow between the source and drain. The working of the MOSFET depends on the MOS capacitor, which is the semiconductor surface below the oxide layers between the source and drain terminal.

How to Calculate Output Resistance of Current Source NMOS given Drain Current?

Output Resistance of Current Source NMOS given Drain Current calculator uses Output Resistance = Device Parameter/Drain Current without Channel Length Modulation to calculate the Output Resistance, The Output Resistance of Current Source NMOS given Drain Current is operated in the linear mode is given by R is ratio of the drain-source voltage and the drain current. Output Resistance is denoted by R_out symbol.

How to calculate Output Resistance of Current Source NMOS given Drain Current using this online calculator? To use this online calculator for Output Resistance of Current Source NMOS given Drain Current, enter Device Parameter (V_A) & Drain Current without Channel Length Modulation (I_D') and hit the calculate button. Here is how the Output Resistance of Current Source NMOS given Drain Current calculation can be explained with given input values -> 0.00125 = 4/0.0032.

FAQ

What is Output Resistance of Current Source NMOS given Drain Current?

The Output Resistance of Current Source NMOS given Drain Current is operated in the linear mode is given by R is ratio of the drain-source voltage and the drain current and is represented as R_out = V_A/I_D' or Output Resistance = Device Parameter/Drain Current without Channel Length Modulation. Device parameter is the parameter used in calculation related to MOSFET.VA is proportional to the channel length L that the designer selects for a MOSFET & Drain Current without Channel Length Modulation means that the saturation-region drain current will increase slightly as the drain-to-source voltage increases.

How to calculate Output Resistance of Current Source NMOS given Drain Current?

The Output Resistance of Current Source NMOS given Drain Current is operated in the linear mode is given by R is ratio of the drain-source voltage and the drain current is calculated using Output Resistance = Device Parameter/Drain Current without Channel Length Modulation. To calculate Output Resistance of Current Source NMOS given Drain Current, you need Device Parameter (V_A) & Drain Current without Channel Length Modulation (I_D'). With our tool, you need to enter the respective value for Device Parameter & Drain Current without Channel Length Modulation and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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