Conductance in Linear Resistance of MOSFET Solution

STEP 0: Pre-Calculation Summary
Formula Used
Conductance of Channel = 1/Linear Resistance
G = 1/Rds
This formula uses 2 Variables
Variables Used
Conductance of Channel - (Measured in Siemens) - The conductance of channel is typically defined as the ratio of the current passing through the channel to the voltage across it.
Linear Resistance - (Measured in Ohm) - Linear resistance, the amount of opposition or resistance is directly proportional to the amount of current flowing through it, as described by Ohm's Law.
STEP 1: Convert Input(s) to Base Unit
Linear Resistance: 0.166 Kilohm --> 166 Ohm (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
G = 1/Rds --> 1/166
Evaluating ... ...
G = 0.00602409638554217
STEP 3: Convert Result to Output's Unit
0.00602409638554217 Siemens -->6.02409638554217 Millisiemens (Check conversion here)
FINAL ANSWER
6.02409638554217 6.024096 Millisiemens <-- Conductance of Channel
(Calculation completed in 00.004 seconds)

Credits

Created by Payal Priya
Birsa Institute of Technology (BIT), Sindri
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Verified by Prahalad Singh
Jaipur Engineering College and Research Centre (JECRC), Jaipur
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14 Resistance Calculators

MOSFET as Linear Resistance given Aspect Ratio
Go Linear Resistance = Channel Length/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width*Effective Voltage)
Output Resistance of Differential Amplifier
Go Output Resistance = ((Common Mode Input Signal*Transconductance)-Total Current)/(2*Transconductance*Total Current)
Input Resistance of Mosfet
Go Input Resistance = Input Voltage/(Collector Current*Small Signal Current Gain)
Finite Resistance between Drain and Source
Go Finite Resistance = modulus(Positive DC Voltage)/Drain Current
Output Resistance given Channel Length Modulation
Go Output Resistance = 1/(Channel Length Modulation*Drain Current)
Input Resistance given Transconductance
Go Input Resistance = Small Signal Current Gain/Transconductance
Electron Mean Free Path
Go Electron Mean Free Path = 1/(Output Resistance*Drain Current)
Drain Output Resistance
Go Output Resistance = 1/(Electron Mean Free Path*Drain Current)
Output Resistance given Transconductance
Go Output Resistance = 1/(Carrier Mobility*Transconductance)
Voltage Dependent Resistance in MOSFET
Go Finite Resistance = Effective Voltage/Drain Current
Output Resistance of Mosfet
Go Output Resistance = Early Voltage/Collector Current
Small Signal Input Resistance
Go Input Resistance = Input Voltage/Base Current
Conductance in Linear Resistance of MOSFET
Go Conductance of Channel = 1/Linear Resistance
MOSFET as Linear Resistance
Go Linear Resistance = 1/Conductance of Channel

15 MOSFET Characterstics Calculators

Conductance of Channel of MOSFET using Gate to Source Voltage
Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)
Voltage Gain given Load Resistance of MOSFET
Go Voltage Gain = Transconductance*(1/(1/Load Resistance+1/Output Resistance))/(1+Transconductance*Source Resistance)
Transition Frequency of MOSFET
Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))
Maximum Voltage Gain at Bias Point
Go Maximum Voltage Gain = 2*(Supply Voltage-Effective Voltage)/(Effective Voltage)
Voltage Gain using Small Signal
Go Voltage Gain = Transconductance*1/(1/Load Resistance+1/Finite Resistance)
Gate to Source Channel Width of MOSFET
Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)
Voltage Gain given Drain Voltage
Go Voltage Gain = (Drain Current*Load Resistance*2)/Effective Voltage
Body Effect on Transconductance
Go Body Transconductance = Change in Threshold to Base Voltage*Transconductance
Saturation Voltage of MOSFET
Go Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage
Bias Voltage of MOSFET
Go Total Instantaneous Bias Voltage = DC Bias Voltage+DC Voltage
Maximum Voltage Gain given all Voltages
Go Maximum Voltage Gain = (Supply Voltage-0.3)/Thermal Voltage
Amplification Factor in Small Signal MOSFET Model
Go Amplification Factor = Transconductance*Output Resistance
Treshold Voltage of MOSFET
Go Threshold Voltage = Gate-Source Voltage-Effective Voltage
Transconductance in MOSFET
Go Transconductance = (2*Drain Current)/Overdrive Voltage
Conductance in Linear Resistance of MOSFET
Go Conductance of Channel = 1/Linear Resistance

Conductance in Linear Resistance of MOSFET Formula

Conductance of Channel = 1/Linear Resistance
G = 1/Rds

Is MOSFET a symmetric device?

MOSFET is a symmetrical device, therefore the answer is yes. however if in your circuit design you have tied your body to one of the terminals, you would want that terminal to be the source.

How to Calculate Conductance in Linear Resistance of MOSFET?

Conductance in Linear Resistance of MOSFET calculator uses Conductance of Channel = 1/Linear Resistance to calculate the Conductance of Channel, Conductance in Linear Resistance of MOSFET is inverse of linear resistance of MOSFET. The linear resistance of a MOSFET can be determined by measuring the voltage across the MOSFET channel and the current flowing through it in the linear operating region. Conductance of Channel is denoted by G symbol.

How to calculate Conductance in Linear Resistance of MOSFET using this online calculator? To use this online calculator for Conductance in Linear Resistance of MOSFET, enter Linear Resistance (Rds) and hit the calculate button. Here is how the Conductance in Linear Resistance of MOSFET calculation can be explained with given input values -> 6024.096 = 1/166.

FAQ

What is Conductance in Linear Resistance of MOSFET?
Conductance in Linear Resistance of MOSFET is inverse of linear resistance of MOSFET. The linear resistance of a MOSFET can be determined by measuring the voltage across the MOSFET channel and the current flowing through it in the linear operating region and is represented as G = 1/Rds or Conductance of Channel = 1/Linear Resistance. Linear resistance, the amount of opposition or resistance is directly proportional to the amount of current flowing through it, as described by Ohm's Law.
How to calculate Conductance in Linear Resistance of MOSFET?
Conductance in Linear Resistance of MOSFET is inverse of linear resistance of MOSFET. The linear resistance of a MOSFET can be determined by measuring the voltage across the MOSFET channel and the current flowing through it in the linear operating region is calculated using Conductance of Channel = 1/Linear Resistance. To calculate Conductance in Linear Resistance of MOSFET, you need Linear Resistance (Rds). With our tool, you need to enter the respective value for Linear Resistance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Conductance of Channel?
In this formula, Conductance of Channel uses Linear Resistance. We can use 1 other way(s) to calculate the same, which is/are as follows -
  • Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)
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