Oxide Capacitance of NMOS Calculator

✖Oxide thickness refers to the thickness of a thin layer of oxide material that is formed on the surface of a substrate, typically a semiconductor material like silicon.ⓘ Oxide Thickness [t_ox]

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✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance of NMOS [C_ox]

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Formula

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Oxide Capacitance of NMOS

Formula

`"C"_{"ox"} = (3.45*10^(-11))/"t"_{"ox"}`

Example

`"2.029412μF"=(3.45*10^(-11))/"17μm"`

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Oxide Capacitance of NMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness
C_ox = (3.45*10^(-11))/t_ox
This formula uses 2 Variables

Variables Used

Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Oxide Thickness - (Measured in Meter) - Oxide thickness refers to the thickness of a thin layer of oxide material that is formed on the surface of a substrate, typically a semiconductor material like silicon.

STEP 1: Convert Input(s) to Base Unit

Oxide Thickness: 17 Micrometer --> 1.7E-05 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_ox = (3.45*10^(-11))/t_ox --> (3.45*10^(-11))/1.7E-05

Evaluating ... ...

C_ox = 2.02941176470588E-06

STEP 3: Convert Result to Output's Unit

2.02941176470588E-06 Farad -->2.02941176470588 Microfarad (Check conversion here)

FINAL ANSWER

2.02941176470588 ≈ 2.029412 Microfarad <-- Oxide Capacitance

(Calculation completed in 00.005 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » N-Channel Enhancement » Oxide Capacitance of NMOS

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< 17 N-Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)

Body Effect in NMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Current Entering Drain Terminal of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)

NMOS as Linear Resistance

Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Drain Current when NMOS Operates as Voltage-Controlled Current Source

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Current Entering Drain-Source at Saturation Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Fabrication Process Parameter of NMOS

Go Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2

Electron Drift Velocity of Channel in NMOS Transistor

Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Total Power Supplied in NMOS

Go Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)

Drain Current given NMOS Operates as Voltage-Controlled Current Source

Go Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio

Output Resistance of Current Source NMOS given Drain Current

Go Output Resistance = Device Parameter/Drain Current without Channel Length Modulation

Total Power Dissipated in NMOS

Go Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance

Positive Voltage given Channel Length in NMOS

Go Voltage = Device Parameter*Length of the Channel

Oxide Capacitance of NMOS

Go Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness

Oxide Capacitance of NMOS Formula

Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness
C_ox = (3.45*10^(-11))/t_ox

What is oxide capacitance?

It is the ratio of e permittivity of the silicon dioxide which is 3.45×10^-11 F/m and thickness of the oxide. It is much more convenient to express Cox per micron squared.

Explain the whole process of the channel region of the MOSFET forming a parallel-plate capacitor.

The gate and the channel region of the MOSFET form a parallel-plate capacitor, with the oxide layer acting as the capacitor dielectric. The positive gate voltage causes a positive charge to accumulate on the top plate of the capacitor (the gate electrode). The corresponding negative charge on the bottom plate is formed by the electrons in the induced channel. An electric field thus develops in the vertical direction. It is this field that controls the amount of charge in the channel, and thus it determines the channel conductivity and, in turn, the current that will flow through the channel when a voltage is applied.

How to Calculate Oxide Capacitance of NMOS?

Oxide Capacitance of NMOS calculator uses Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness to calculate the Oxide Capacitance, Oxide capacitance of NMOS (Cox), is the capacitance of the parallel-plate capacitor of the n-enhancement type mosfet. It is inversely proportional to the thickness of the oxide layer. Oxide Capacitance is denoted by C_ox symbol.

How to calculate Oxide Capacitance of NMOS using this online calculator? To use this online calculator for Oxide Capacitance of NMOS, enter Oxide Thickness (t_ox) and hit the calculate button. Here is how the Oxide Capacitance of NMOS calculation can be explained with given input values -> 2E+6 = (3.45*10^(-11))/1.7E-05.

FAQ

What is Oxide Capacitance of NMOS?

Oxide capacitance of NMOS (Cox), is the capacitance of the parallel-plate capacitor of the n-enhancement type mosfet. It is inversely proportional to the thickness of the oxide layer and is represented as C_ox = (3.45*10^(-11))/t_ox or Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness. Oxide thickness refers to the thickness of a thin layer of oxide material that is formed on the surface of a substrate, typically a semiconductor material like silicon.

How to calculate Oxide Capacitance of NMOS?

Oxide capacitance of NMOS (Cox), is the capacitance of the parallel-plate capacitor of the n-enhancement type mosfet. It is inversely proportional to the thickness of the oxide layer is calculated using Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness. To calculate Oxide Capacitance of NMOS, you need Oxide Thickness (t_ox). With our tool, you need to enter the respective value for Oxide Thickness and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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