Positive Voltage given Device Parameter in MOSFET Calculator

✖Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.ⓘ Gate-Source Voltage [V_gs]			+10% -10%
✖Angular Frequency of wave refers to the angular displacement per unit time. It is a scalar measure of rotation rate.ⓘ Angular Frequency [ω]			+10% -10%
✖The source gate capacitance is a measure of the capacitance between the source and gate electrodes in a field-effect transistor (FET).ⓘ Source Gate Capacitance [C_sg]			+10% -10%
✖Gate-drain capacitance is a parasitic capacitance that exists between the gate and drain electrodes of a field-effect transistor (FET).ⓘ Gate-Drain Capacitance [C_gd]			+10% -10%

✖Input current can refer to the electric current that is flowing into an electrical device or circuit. This current can be AC or DC depending on the device and the power source.ⓘ Positive Voltage given Device Parameter in MOSFET [I_in]

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Formula

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Positive Voltage given Device Parameter in MOSFET

Formula

`"I"_{"in"} = "V"_{"gs"}*("ω"*("C"_{"sg"}+"C"_{"gd"}))`

Example

`"2.00112mA"="4V"*("33rad/s"*("8.16μF"+"7μF"))`

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Positive Voltage given Device Parameter in MOSFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Input Current = Gate-Source Voltage*(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance))
I_in = V_gs*(ω*(C_sg+C_gd))
This formula uses 5 Variables

Variables Used

Input Current - (Measured in Ampere) - Input current can refer to the electric current that is flowing into an electrical device or circuit. This current can be AC or DC depending on the device and the power source.
Gate-Source Voltage - (Measured in Volt) - Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.
Angular Frequency - (Measured in Radian per Second) - Angular Frequency of wave refers to the angular displacement per unit time. It is a scalar measure of rotation rate.
Source Gate Capacitance - (Measured in Farad) - The source gate capacitance is a measure of the capacitance between the source and gate electrodes in a field-effect transistor (FET).
Gate-Drain Capacitance - (Measured in Farad) - Gate-drain capacitance is a parasitic capacitance that exists between the gate and drain electrodes of a field-effect transistor (FET).

STEP 1: Convert Input(s) to Base Unit

Gate-Source Voltage: 4 Volt --> 4 Volt No Conversion Required
Angular Frequency: 33 Radian per Second --> 33 Radian per Second No Conversion Required
Source Gate Capacitance: 8.16 Microfarad --> 8.16E-06 Farad (Check conversion here)
Gate-Drain Capacitance: 7 Microfarad --> 7E-06 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_in = V_gs*(ω*(C_sg+C_gd)) --> 4*(33*(8.16E-06+7E-06))

Evaluating ... ...

I_in = 0.00200112

STEP 3: Convert Result to Output's Unit

0.00200112 Ampere -->2.00112 Milliampere (Check conversion here)

FINAL ANSWER

2.00112 Milliampere <-- Input Current

(Calculation completed in 00.004 seconds)

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< 20 Voltage Calculators

Conductance of Channel of MOSFET using Gate to Source Voltage

Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)

Common Gate Output Voltage

Go Output Voltage = -(Transconductance*Critical Voltage)*((Load Resistance*Gate Resistance)/(Gate Resistance+Load Resistance))

Output Voltage at Drain Q1 of MOSFET given Common-Mode Signal

Go Drain Voltage Q1 = -Output Resistance*(Transconductance*Common Mode Input Signal)/(1+(2*Transconductance*Output Resistance))

Voltage across Gate and Source of MOSFET on Operation with Differential Input Voltage

Go Gate-Source Voltage = Threshold Voltage+sqrt((2*DC Bias Current)/(Process Transconductance Parameter*Aspect Ratio))

Source Input Voltage

Go Source Input Voltage = Input Voltage*(Input Amplifier Resistance/(Input Amplifier Resistance+Equivalent Source Resistance))

Input Gate-to-Source Voltage

Go Critical Voltage = (Input Amplifier Resistance/(Input Amplifier Resistance+Equivalent Source Resistance))*Input Voltage

Output Voltage at Drain Q2 of MOSFET given Common-Mode Signal

Go Drain Voltage Q2 = -(Output Resistance/((1/Transconductance)+2*Output Resistance))*Common Mode Input Signal

Voltage across Gate and Source of MOSFET given Input Current

Go Gate-Source Voltage = Input Current/(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance))

Positive Voltage given Device Parameter in MOSFET

Go Input Current = Gate-Source Voltage*(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance))

Overdrive Voltage when MOSFET Acts as Amplifier with Load Resistance

Go Transconductance = Total Current/(Common Mode Input Signal-(2*Total Current*Output Resistance))

Incremental Voltage Signal of Differential Amplifier

Go Common Mode Input Signal = (Total Current/Transconductance)+(2*Total Current*Output Resistance)

Voltage at Drain Q1 of MOSFET

Go Output Voltage = -(Total Load Resistance of MOSFET/(2*Output Resistance))*Common Mode Input Signal

Voltage at Drain Q2 in MOSFET

Go Output Voltage = -(Total Load Resistance of MOSFET/(2*Output Resistance))*Common Mode Input Signal

Saturation Voltage of MOSFET

Go Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage

Voltage across Gate to Source of MOSFET on Differential Input Voltage given Overdrive Voltage

Go Gate-Source Voltage = Threshold Voltage+1.4*Effective Voltage

Threshold Voltage when MOSFET Acts as Amplifier

Go Threshold Voltage = Gate-Source Voltage-Effective Voltage

Treshold Voltage of MOSFET

Go Threshold Voltage = Gate-Source Voltage-Effective Voltage

Overdrive Voltage

Go Overdrive Voltage = (2*Drain Current)/Transconductance

Output Voltage at Drain Q1 of MOSFET

Go Drain Voltage Q1 = -(Output Resistance*Total Current)

Output Voltage at Drain Q2 of MOSFET

Go Drain Voltage Q2 = -(Output Resistance*Total Current)

Positive Voltage given Device Parameter in MOSFET Formula

Input Current = Gate-Source Voltage*(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance))
I_in = V_gs*(ω*(C_sg+C_gd))

What is a MOSFET used for?

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device that is widely used for switching purposes and for the amplification of electronic signals in electronic devices.

What are the types of MOSFETs?

There are two classes of MOSFETs. There is depletion mode and there is enhancement mode. Each class is available as an n- or a p-channel, giving a total of four types of MOSFETs. Depletion mode comes in an N or a P and an enhancement mode comes in an N or a P.

How to Calculate Positive Voltage given Device Parameter in MOSFET?

Positive Voltage given Device Parameter in MOSFET calculator uses Input Current = Gate-Source Voltage*(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance)) to calculate the Input Current, The Positive Voltage given Device Parameter in MOSFET increases with doping while the threshold of pMOS structures decreases with doping in the same way. A variation of the flat band voltage due to oxide charge will cause both curves to move down if the charge is positive and up if the charge is negative. Input Current is denoted by I_in symbol.

How to calculate Positive Voltage given Device Parameter in MOSFET using this online calculator? To use this online calculator for Positive Voltage given Device Parameter in MOSFET, enter Gate-Source Voltage (V_gs), Angular Frequency (ω), Source Gate Capacitance (C_sg) & Gate-Drain Capacitance (C_gd) and hit the calculate button. Here is how the Positive Voltage given Device Parameter in MOSFET calculation can be explained with given input values -> 2001.12 = 4*(33*(8.16E-06+7E-06)).

FAQ

What is Positive Voltage given Device Parameter in MOSFET?

The Positive Voltage given Device Parameter in MOSFET increases with doping while the threshold of pMOS structures decreases with doping in the same way. A variation of the flat band voltage due to oxide charge will cause both curves to move down if the charge is positive and up if the charge is negative and is represented as I_in = V_gs*(ω*(C_sg+C_gd)) or Input Current = Gate-Source Voltage*(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance)). Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior, Angular Frequency of wave refers to the angular displacement per unit time. It is a scalar measure of rotation rate, The source gate capacitance is a measure of the capacitance between the source and gate electrodes in a field-effect transistor (FET) & Gate-drain capacitance is a parasitic capacitance that exists between the gate and drain electrodes of a field-effect transistor (FET).

How to calculate Positive Voltage given Device Parameter in MOSFET?

The Positive Voltage given Device Parameter in MOSFET increases with doping while the threshold of pMOS structures decreases with doping in the same way. A variation of the flat band voltage due to oxide charge will cause both curves to move down if the charge is positive and up if the charge is negative is calculated using Input Current = Gate-Source Voltage*(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance)). To calculate Positive Voltage given Device Parameter in MOSFET, you need Gate-Source Voltage (V_gs), Angular Frequency (ω), Source Gate Capacitance (C_sg) & Gate-Drain Capacitance (C_gd). With our tool, you need to enter the respective value for Gate-Source Voltage, Angular Frequency, Source Gate Capacitance & Gate-Drain Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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