Positive Voltage given Channel Length in NMOS Calculator

✖Device parameter is the parameter used in calculation related to MOSFET.VA is proportional to the channel length L that the designer selects for a MOSFET.ⓘ Device Parameter [V_A]			+10% -10%
✖Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.ⓘ Length of the Channel [L]			+10% -10%

✖Voltage is the difference in electric potential between two points, which is defined as the work needed per unit of charge to move a test charge between the two points.ⓘ Positive Voltage given Channel Length in NMOS [V]

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Formula

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Positive Voltage given Channel Length in NMOS

Formula

`"V" = "V"_{"A"}*"L"`

Example

`"1.2E^-5V"="4V"*"3μm"`

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Positive Voltage given Channel Length in NMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Voltage = Device Parameter*Length of the Channel
V = V_A*L
This formula uses 3 Variables

Variables Used

Voltage - (Measured in Volt) - Voltage is the difference in electric potential between two points, which is defined as the work needed per unit of charge to move a test charge between the two points.
Device Parameter - (Measured in Volt) - Device parameter is the parameter used in calculation related to MOSFET.VA is proportional to the channel length L that the designer selects for a MOSFET.
Length of the Channel - (Measured in Meter) - Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.

STEP 1: Convert Input(s) to Base Unit

Device Parameter: 4 Volt --> 4 Volt No Conversion Required
Length of the Channel: 3 Micrometer --> 3E-06 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V = V_A*L --> 4*3E-06

Evaluating ... ...

V = 1.2E-05

STEP 3: Convert Result to Output's Unit

1.2E-05 Volt --> No Conversion Required

FINAL ANSWER

1.2E-05 ≈ 1.2E-5 Volt <-- Voltage

(Calculation completed in 00.004 seconds)

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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< 17 N-Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)

Body Effect in NMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Current Entering Drain Terminal of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)

NMOS as Linear Resistance

Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Drain Current when NMOS Operates as Voltage-Controlled Current Source

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Current Entering Drain-Source at Saturation Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Fabrication Process Parameter of NMOS

Go Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2

Electron Drift Velocity of Channel in NMOS Transistor

Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Total Power Supplied in NMOS

Go Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)

Drain Current given NMOS Operates as Voltage-Controlled Current Source

Go Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio

Output Resistance of Current Source NMOS given Drain Current

Go Output Resistance = Device Parameter/Drain Current without Channel Length Modulation

Total Power Dissipated in NMOS

Go Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance

Positive Voltage given Channel Length in NMOS

Go Voltage = Device Parameter*Length of the Channel

Oxide Capacitance of NMOS

Go Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness

Positive Voltage given Channel Length in NMOS Formula

Voltage = Device Parameter*Length of the Channel
V = V_A*L

What is a MOSFET used for?

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device that is widely used for switching purposes and for the amplification of electronic signals in electronic devices.

What are the types of MOSFETs?

There are two classes of MOSFETs. There is depletion mode and there is enhancement mode. Each class is available as an n- or a p-channel, giving a total of four types of MOSFETs. Depletion mode comes in an N or a P and an enhancement mode comes in an N or a P.

How to Calculate Positive Voltage given Channel Length in NMOS?

Positive Voltage given Channel Length in NMOS calculator uses Voltage = Device Parameter*Length of the Channel to calculate the Voltage, The Positive Voltage given Channel Length in NMOS increases with doping while the threshold of pMOS structures decreases with doping in the same way. A variation of the flat band voltage due to the oxide charge will cause both curves to move down if the charge is positive and up if the charge is negative. Voltage is denoted by V symbol.

How to calculate Positive Voltage given Channel Length in NMOS using this online calculator? To use this online calculator for Positive Voltage given Channel Length in NMOS, enter Device Parameter (V_A) & Length of the Channel (L) and hit the calculate button. Here is how the Positive Voltage given Channel Length in NMOS calculation can be explained with given input values -> 1.2E-5 = 4*3E-06.

FAQ

What is Positive Voltage given Channel Length in NMOS?

The Positive Voltage given Channel Length in NMOS increases with doping while the threshold of pMOS structures decreases with doping in the same way. A variation of the flat band voltage due to the oxide charge will cause both curves to move down if the charge is positive and up if the charge is negative and is represented as V = V_A*L or Voltage = Device Parameter*Length of the Channel. Device parameter is the parameter used in calculation related to MOSFET.VA is proportional to the channel length L that the designer selects for a MOSFET & Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.

How to calculate Positive Voltage given Channel Length in NMOS?

The Positive Voltage given Channel Length in NMOS increases with doping while the threshold of pMOS structures decreases with doping in the same way. A variation of the flat band voltage due to the oxide charge will cause both curves to move down if the charge is positive and up if the charge is negative is calculated using Voltage = Device Parameter*Length of the Channel. To calculate Positive Voltage given Channel Length in NMOS, you need Device Parameter (V_A) & Length of the Channel (L). With our tool, you need to enter the respective value for Device Parameter & Length of the Channel and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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