Thermal Equilibrium Concentration of Minority Charge Carrier Solution

STEP 0: Pre-Calculation Summary
Formula Used
Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base
npo = ((ni)^2)/NB
This formula uses 3 Variables
Variables Used
Thermal Equilibrium Concentration - (Measured in 1 per Cubic Meter) - Thermal Equilibrium Concentration is defined as the concentration of carriers in an amplifier.
Intrinsic Carrier Density - (Measured in 1 per Cubic Meter) - Intrinsic carrier density is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
Doping Concentration of Base - (Measured in 1 per Cubic Meter) - The Doping concentration of Base is the number of impurities added to the base.
STEP 1: Convert Input(s) to Base Unit
Intrinsic Carrier Density: 4500000000 1 per Cubic Meter --> 4500000000 1 per Cubic Meter No Conversion Required
Doping Concentration of Base: 19 1 per Cubic Meter --> 19 1 per Cubic Meter No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
npo = ((ni)^2)/NB --> ((4500000000)^2)/19
Evaluating ... ...
npo = 1.06578947368421E+18
STEP 3: Convert Result to Output's Unit
1.06578947368421E+18 1 per Cubic Meter --> No Conversion Required
FINAL ANSWER
1.06578947368421E+18 1.1E+18 1 per Cubic Meter <-- Thermal Equilibrium Concentration
(Calculation completed in 00.004 seconds)

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10+ Internal Capacitive Effects and High Frequency Model Calculators

Collector-Base Junction Capacitance
Go Collector-Base Junction Capacitance = Collector-Base Junction Capacitance at 0 Voltage/(1+(Reverse-Bias Voltage/Built-In Voltage))^Grading Coefficient
Transition Frequency of BJT
Go Transition Frequency = Transconductance/(2*pi*(Emitter-Base Capacitance+Collector-Base Junction Capacitance))
Concentration of Electrons Injected from Emitter to Base
Go Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage)
Unity-Gain Bandwidth of BJT
Go Unity-Gain Bandwidth = Transconductance/(Emitter-Base Capacitance+Collector-Base Junction Capacitance)
Small-Signal Diffusion Capacitance of BJT
Go Emitter-Base Capacitance = Device Constant*(Collector Current/Threshold Voltage)
Thermal Equilibrium Concentration of Minority Charge Carrier
Go Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base
Small-Signal Diffusion Capacitance
Go Emitter-Base Capacitance = Device Constant*Transconductance
Stored Electron Charge in Base of BJT
Go Stored Electron Charge = Device Constant*Collector Current
Transition Frequency of BJT given Device Constant
Go Transition Frequency = 1/(2*pi*Device Constant)
Base-Emitter Junction Capacitance
Go Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance

20 BJT Circuit Calculators

Transition Frequency of BJT
Go Transition Frequency = Transconductance/(2*pi*(Emitter-Base Capacitance+Collector-Base Junction Capacitance))
Base Current of PNP Transistor using Saturation Current
Go Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage)
Total Power Dissipated in BJT
Go Power = Collector-Emitter Voltage*Collector Current+Base-Emitter Voltage*Base Current
Unity-Gain Bandwidth of BJT
Go Unity-Gain Bandwidth = Transconductance/(Emitter-Base Capacitance+Collector-Base Junction Capacitance)
Reference Current of BJT Mirror
Go Reference Current = Collector Current+(2*Collector Current)/Common Emitter Current Gain
Common Mode Rejection Ratio
Go Common Mode Rejection Ratio = 20*log10(Differential Mode Gain/Common Mode Gain)
Output Resistance of BJT
Go Resistance = (Supply Voltage+Collector-Emitter Voltage)/Collector Current
Thermal Equilibrium Concentration of Minority Charge Carrier
Go Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base
Output Voltage of BJT Amplifier
Go Output Voltage = Supply Voltage-Drain Current*Load Resistance
Total Power Supplied in BJT
Go Power = Supply Voltage*(Collector Current+Input Current)
Common-Base Current Gain
Go Common-Base Current Gain = Common Emitter Current Gain/(Common Emitter Current Gain+1)
Collector to Emitter Voltage at Saturation
Go Collector-Emitter Voltage = Base-Emitter Voltage-Base-Collector Voltage
Base Current of PNP Transistor given Emitter Current
Go Base Current = Emitter Current/(Common Emitter Current Gain+1)
Base Current of PNP Transistor using Collector Current
Go Base Current = Collector Current/Common Emitter Current Gain
Collector Current using Emitter Current
Go Collector Current = Common-Base Current Gain*Emitter Current
Base Current of PNP Transistor using Common-Base Current Gain
Go Base Current = (1-Common-Base Current Gain)*Emitter Current
Collector Current of BJT
Go Collector Current = Emitter Current-Base Current
Emitter Current of BJT
Go Emitter Current = Collector Current+Base Current
Short-Circuit Transconductance
Go Transconductance = Output Current/Input Voltage
Intrinsic Gain of BJT
Go Intrinsic Gain = Early Voltage/Thermal Voltage

Thermal Equilibrium Concentration of Minority Charge Carrier Formula

Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base
npo = ((ni)^2)/NB

What is thermal equilibrium carrier concentration?

The number of carriers in the conduction and valence band with no externally applied bias is called the equilibrium carrier concentration. For majority carriers, the equilibrium carrier concentration is equal to the intrinsic carrier concentration plus the number of free carriers added by doping the semiconductor.

How to Calculate Thermal Equilibrium Concentration of Minority Charge Carrier?

Thermal Equilibrium Concentration of Minority Charge Carrier calculator uses Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base to calculate the Thermal Equilibrium Concentration, The Thermal equilibrium concentration of minority charge carrier is the value when the carriers in the conduction and valence band with no externally applied bias. Thermal Equilibrium Concentration is denoted by npo symbol.

How to calculate Thermal Equilibrium Concentration of Minority Charge Carrier using this online calculator? To use this online calculator for Thermal Equilibrium Concentration of Minority Charge Carrier, enter Intrinsic Carrier Density (ni) & Doping Concentration of Base (NB) and hit the calculate button. Here is how the Thermal Equilibrium Concentration of Minority Charge Carrier calculation can be explained with given input values -> 1.1E+18 = ((4500000000)^2)/19.

FAQ

What is Thermal Equilibrium Concentration of Minority Charge Carrier?
The Thermal equilibrium concentration of minority charge carrier is the value when the carriers in the conduction and valence band with no externally applied bias and is represented as npo = ((ni)^2)/NB or Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base. Intrinsic carrier density is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material & The Doping concentration of Base is the number of impurities added to the base.
How to calculate Thermal Equilibrium Concentration of Minority Charge Carrier?
The Thermal equilibrium concentration of minority charge carrier is the value when the carriers in the conduction and valence band with no externally applied bias is calculated using Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base. To calculate Thermal Equilibrium Concentration of Minority Charge Carrier, you need Intrinsic Carrier Density (ni) & Doping Concentration of Base (NB). With our tool, you need to enter the respective value for Intrinsic Carrier Density & Doping Concentration of Base and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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