Total Power Supplied in NMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)
PS = Vdd*(Id+I)
This formula uses 4 Variables
Variables Used
Power Supplied - (Measured in Watt) - Power supplied are used in a wide range of applications, from powering small electronic devices to providing electricity to large industrial machinery and systems.
Supply Voltage - (Measured in Volt) - Supply voltage is the voltage level supplied to an electronic device, and it is a critical parameter that affects the performance and reliability of the device.
Drain Current in NMOS - (Measured in Ampere) - Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
Current - (Measured in Ampere) - Current is the RMS value of the currents passing through n-type MOSFETs in a combined state circuit.
STEP 1: Convert Input(s) to Base Unit
Supply Voltage: 6 Volt --> 6 Volt No Conversion Required
Drain Current in NMOS: 239 Milliampere --> 0.239 Ampere (Check conversion here)
Current: 5 Milliampere --> 0.005 Ampere (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
PS = Vdd*(Id+I) --> 6*(0.239+0.005)
Evaluating ... ...
PS = 1.464
STEP 3: Convert Result to Output's Unit
1.464 Watt -->1464 Milliwatt (Check conversion here)
FINAL ANSWER
1464 Milliwatt <-- Power Supplied
(Calculation completed in 00.020 seconds)

Credits

Created by Payal Priya
Birsa Institute of Technology (BIT), Sindri
Payal Priya has created this Calculator and 600+ more calculators!
Verified by Anshika Arya
National Institute Of Technology (NIT), Hamirpur
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17 N-Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS
Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)
Current Entering Drain Terminal of NMOS given Gate Source Voltage
Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)
Body Effect in NMOS
Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))
Current Entering Drain Terminal of NMOS
Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)
NMOS as Linear Resistance
Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))
Drain Current when NMOS Operates as Voltage-Controlled Current Source
Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2
Current Entering Drain-Source at Saturation Region of NMOS
Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2
Fabrication Process Parameter of NMOS
Go Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance
Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage
Go Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2
Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS
Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2
Electron Drift Velocity of Channel in NMOS Transistor
Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel
Total Power Supplied in NMOS
Go Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)
Drain Current given NMOS Operates as Voltage-Controlled Current Source
Go Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio
Output Resistance of Current Source NMOS given Drain Current
Go Output Resistance = Device Parameter/Drain Current without Channel Length Modulation
Total Power Dissipated in NMOS
Go Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance
Positive Voltage given Channel Length in NMOS
Go Voltage = Device Parameter*Length of the Channel
Oxide Capacitance of NMOS
Go Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness

Total Power Supplied in NMOS Formula

Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)
PS = Vdd*(Id+I)

What is power dissipated?

The definition of power dissipation is the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action. Such as the case with central processing units, power dissipation is a principal concern in computer architecture. Furthermore, power dissipation in resistors is considered a naturally occurring phenomenon. The fact remains that all resistors that are part of a circuit and have a voltage drop across them will dissipate electrical power. Moreover, this electrical power converts into heat energy, and therefore all resistors have a (power) rating. Also, a resistor’s power rating is a classification that parameterizes the maximum power that it can dissipate before it reaches critical failure.

How to Calculate Total Power Supplied in NMOS?

Total Power Supplied in NMOS calculator uses Power Supplied = Supply Voltage*(Drain Current in NMOS+Current) to calculate the Power Supplied, The total power supplied in NMOS is equal to the product of the supply voltage of MOSFET and the total current. It is denoted by Ps. Power Supplied is denoted by PS symbol.

How to calculate Total Power Supplied in NMOS using this online calculator? To use this online calculator for Total Power Supplied in NMOS, enter Supply Voltage (Vdd), Drain Current in NMOS (Id) & Current (I) and hit the calculate button. Here is how the Total Power Supplied in NMOS calculation can be explained with given input values -> 1.5E+6 = 6*(0.239+0.005).

FAQ

What is Total Power Supplied in NMOS?
The total power supplied in NMOS is equal to the product of the supply voltage of MOSFET and the total current. It is denoted by Ps and is represented as PS = Vdd*(Id+I) or Power Supplied = Supply Voltage*(Drain Current in NMOS+Current). Supply voltage is the voltage level supplied to an electronic device, and it is a critical parameter that affects the performance and reliability of the device, Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET) & Current is the RMS value of the currents passing through n-type MOSFETs in a combined state circuit.
How to calculate Total Power Supplied in NMOS?
The total power supplied in NMOS is equal to the product of the supply voltage of MOSFET and the total current. It is denoted by Ps is calculated using Power Supplied = Supply Voltage*(Drain Current in NMOS+Current). To calculate Total Power Supplied in NMOS, you need Supply Voltage (Vdd), Drain Current in NMOS (Id) & Current (I). With our tool, you need to enter the respective value for Supply Voltage, Drain Current in NMOS & Current and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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