MOSFET Transconductance using Process Transconductance Parameter Solution

STEP 0: Pre-Calculation Summary
Formula Used
Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage))
k'n = gm/(WL*(Vgs-Vth))
This formula uses 5 Variables
Variables Used
Process Transconductance Parameter - (Measured in Ampere per Square Volt) - The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Transconductance - (Measured in Siemens) - Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.
Aspect Ratio - Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.
Gate-Source Voltage - (Measured in Volt) - Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
STEP 1: Convert Input(s) to Base Unit
Transconductance: 0.5 Millisiemens --> 0.0005 Siemens (Check conversion here)
Aspect Ratio: 0.1 --> No Conversion Required
Gate-Source Voltage: 4 Volt --> 4 Volt No Conversion Required
Threshold Voltage: 3.68 Volt --> 3.68 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
k'n = gm/(WL*(Vgs-Vth)) --> 0.0005/(0.1*(4-3.68))
Evaluating ... ...
k'n = 0.015625
STEP 3: Convert Result to Output's Unit
0.015625 Ampere per Square Volt --> No Conversion Required
FINAL ANSWER
0.015625 Ampere per Square Volt <-- Process Transconductance Parameter
(Calculation completed in 00.020 seconds)

Credits

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Birsa Institute of Technology (BIT), Sindri
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16 Transconductance Calculators

MOSFET Transconductance using Process Transconductance Parameter
Go Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage))
Transconductance given Process Transconductance Parameter
Go Transconductance = Process Transconductance Parameter*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)
Transconductance given Drain Current
Go Transconductance = sqrt(2*Process Transconductance Parameter*Aspect Ratio*Drain Current)
MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage
Go Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage)
Process Transconductance given Transconductance and Drain Current
Go Process Transconductance Parameter = Transconductance^2/(2*Aspect Ratio*Drain Current)
Drain Current given process transconductance and transconductance
Go Drain Current = Transconductance^2/(2*Aspect Ratio*Process Transconductance Parameter)
MOSFET Transconductance given Transconductance Parameter
Go Transconductance = Transconductance Parameter*(Gate-Source Voltage-Threshold Voltage)
Transconductance using Process Transconductance Parameter and Overdrive Voltage
Go Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage
MOSFET Transconductance Parameter using Process Transconductance
Go Transconductance Parameter = Process Transconductance Parameter*Aspect Ratio
Body Effect on Transconductance
Go Body Transconductance = Change in Threshold to Base Voltage*Transconductance
Back Gate Transconductance
Go Back Gate Transconductance = Transconductance*Voltage Efficiency
MOSFET Transconductance given Overdrive Voltage
Go Transconductance = Transconductance Parameter*Overdrive Voltage
Process Transconductance Parameter of MOSFET
Go Transconductance Parameter = Transconductance/Overdrive Voltage
MOSFET Transconductance
Go Transconductance = Change in Drain Current/Gate-Source Voltage
Drain Current using Transconductance
Go Drain Current = (Overdrive Voltage)*Transconductance/2
Transconductance in MOSFET
Go Transconductance = (2*Drain Current)/Overdrive Voltage

MOSFET Transconductance using Process Transconductance Parameter Formula

Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage))
k'n = gm/(WL*(Vgs-Vth))

What is the use of transconductance in MOSFET?

Transconductance is an expression of the performance of a bipolar transistor or field-effect transistor (FET). In general, the larger the transconductance figure for a device, the greater the gain(amplification) it is capable of delivering, when all other factors are held constant.

How to Calculate MOSFET Transconductance using Process Transconductance Parameter?

MOSFET Transconductance using Process Transconductance Parameter calculator uses Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)) to calculate the Process Transconductance Parameter, The MOSFET Transconductance using Process Transconductance Parameter is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage. Process Transconductance Parameter is denoted by k'n symbol.

How to calculate MOSFET Transconductance using Process Transconductance Parameter using this online calculator? To use this online calculator for MOSFET Transconductance using Process Transconductance Parameter, enter Transconductance (gm), Aspect Ratio (WL), Gate-Source Voltage (Vgs) & Threshold Voltage (Vth) and hit the calculate button. Here is how the MOSFET Transconductance using Process Transconductance Parameter calculation can be explained with given input values -> 0.015625 = 0.0005/(0.1*(4-3.68)).

FAQ

What is MOSFET Transconductance using Process Transconductance Parameter?
The MOSFET Transconductance using Process Transconductance Parameter is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage and is represented as k'n = gm/(WL*(Vgs-Vth)) or Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)). Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant, Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor, Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
How to calculate MOSFET Transconductance using Process Transconductance Parameter?
The MOSFET Transconductance using Process Transconductance Parameter is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage is calculated using Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)). To calculate MOSFET Transconductance using Process Transconductance Parameter, you need Transconductance (gm), Aspect Ratio (WL), Gate-Source Voltage (Vgs) & Threshold Voltage (Vth). With our tool, you need to enter the respective value for Transconductance, Aspect Ratio, Gate-Source Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Process Transconductance Parameter?
In this formula, Process Transconductance Parameter uses Transconductance, Aspect Ratio, Gate-Source Voltage & Threshold Voltage. We can use 2 other way(s) to calculate the same, which is/are as follows -
  • Process Transconductance Parameter = Transconductance^2/(2*Aspect Ratio*Drain Current)
  • Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage)
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