Transconductance using Process Transconductance Parameter and Overdrive Voltage Solution

STEP 0: Pre-Calculation Summary
Formula Used
Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage
gm = k'n*WL*Vov
This formula uses 4 Variables
Variables Used
Transconductance - (Measured in Siemens) - Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.
Process Transconductance Parameter - (Measured in Ampere per Square Volt) - The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Aspect Ratio - Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.
Overdrive Voltage - (Measured in Volt) - Overdrive voltage is a term used in electronics and refers to the voltage level applied to a device or component that exceeds its normal operating voltage.
STEP 1: Convert Input(s) to Base Unit
Process Transconductance Parameter: 0.015 Ampere per Square Volt --> 0.015 Ampere per Square Volt No Conversion Required
Aspect Ratio: 0.1 --> No Conversion Required
Overdrive Voltage: 0.32 Volt --> 0.32 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
gm = k'n*WL*Vov --> 0.015*0.1*0.32
Evaluating ... ...
gm = 0.00048
STEP 3: Convert Result to Output's Unit
0.00048 Siemens -->0.48 Millisiemens (Check conversion here)
FINAL ANSWER
0.48 Millisiemens <-- Transconductance
(Calculation completed in 00.004 seconds)

Credits

Created by Payal Priya
Birsa Institute of Technology (BIT), Sindri
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National Institute Of Technology (NIT), Hamirpur
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16 Transconductance Calculators

MOSFET Transconductance using Process Transconductance Parameter
Go Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage))
Transconductance given Process Transconductance Parameter
Go Transconductance = Process Transconductance Parameter*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)
Transconductance given Drain Current
Go Transconductance = sqrt(2*Process Transconductance Parameter*Aspect Ratio*Drain Current)
MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage
Go Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage)
Process Transconductance given Transconductance and Drain Current
Go Process Transconductance Parameter = Transconductance^2/(2*Aspect Ratio*Drain Current)
Drain Current given process transconductance and transconductance
Go Drain Current = Transconductance^2/(2*Aspect Ratio*Process Transconductance Parameter)
MOSFET Transconductance given Transconductance Parameter
Go Transconductance = Transconductance Parameter*(Gate-Source Voltage-Threshold Voltage)
Transconductance using Process Transconductance Parameter and Overdrive Voltage
Go Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage
MOSFET Transconductance Parameter using Process Transconductance
Go Transconductance Parameter = Process Transconductance Parameter*Aspect Ratio
Body Effect on Transconductance
Go Body Transconductance = Change in Threshold to Base Voltage*Transconductance
Back Gate Transconductance
Go Back Gate Transconductance = Transconductance*Voltage Efficiency
MOSFET Transconductance given Overdrive Voltage
Go Transconductance = Transconductance Parameter*Overdrive Voltage
Process Transconductance Parameter of MOSFET
Go Transconductance Parameter = Transconductance/Overdrive Voltage
MOSFET Transconductance
Go Transconductance = Change in Drain Current/Gate-Source Voltage
Drain Current using Transconductance
Go Drain Current = (Overdrive Voltage)*Transconductance/2
Transconductance in MOSFET
Go Transconductance = (2*Drain Current)/Overdrive Voltage

Transconductance using Process Transconductance Parameter and Overdrive Voltage Formula

Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage
gm = k'n*WL*Vov

What is the use of transconductance in MOSFET?

Transconductance is an expression of the performance of a bipolar transistor or field-effect transistor (FET). In general, the larger the transconductance figure for a device, the greater the gain(amplification) it is capable of delivering, when all other factors are held constant.

How to Calculate Transconductance using Process Transconductance Parameter and Overdrive Voltage?

Transconductance using Process Transconductance Parameter and Overdrive Voltage calculator uses Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage to calculate the Transconductance, Transconductance using Process Transconductance Parameter and Overdrive Voltage , is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage. Transconductance is denoted by gm symbol.

How to calculate Transconductance using Process Transconductance Parameter and Overdrive Voltage using this online calculator? To use this online calculator for Transconductance using Process Transconductance Parameter and Overdrive Voltage, enter Process Transconductance Parameter (k'n), Aspect Ratio (WL) & Overdrive Voltage (Vov) and hit the calculate button. Here is how the Transconductance using Process Transconductance Parameter and Overdrive Voltage calculation can be explained with given input values -> 480 = 0.015*0.1*0.32.

FAQ

What is Transconductance using Process Transconductance Parameter and Overdrive Voltage?
Transconductance using Process Transconductance Parameter and Overdrive Voltage , is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage and is represented as gm = k'n*WL*Vov or Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage. The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor, Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor & Overdrive voltage is a term used in electronics and refers to the voltage level applied to a device or component that exceeds its normal operating voltage.
How to calculate Transconductance using Process Transconductance Parameter and Overdrive Voltage?
Transconductance using Process Transconductance Parameter and Overdrive Voltage , is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage is calculated using Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage. To calculate Transconductance using Process Transconductance Parameter and Overdrive Voltage, you need Process Transconductance Parameter (k'n), Aspect Ratio (WL) & Overdrive Voltage (Vov). With our tool, you need to enter the respective value for Process Transconductance Parameter, Aspect Ratio & Overdrive Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Transconductance?
In this formula, Transconductance uses Process Transconductance Parameter, Aspect Ratio & Overdrive Voltage. We can use 6 other way(s) to calculate the same, which is/are as follows -
  • Transconductance = sqrt(2*Process Transconductance Parameter*Aspect Ratio*Drain Current)
  • Transconductance = Process Transconductance Parameter*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)
  • Transconductance = Transconductance Parameter*(Gate-Source Voltage-Threshold Voltage)
  • Transconductance = Transconductance Parameter*Overdrive Voltage
  • Transconductance = (2*Drain Current)/Overdrive Voltage
  • Transconductance = Change in Drain Current/Gate-Source Voltage
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