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Birsa Institute of Technology (BIT), Sindri
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## Capacitance of the varactor diode Solution

STEP 0: Pre-Calculation Summary
Formula Used
capacitance_of_varactor_diode = Constant a/(Barrier Potential-Applied reverse bias potential)^Constant B
CT = a/(Vb-V)^B
This formula uses 4 Variables
Variables Used
Constant a- Constant a is the empirical constant given according to conditions in sutherland equation.
Barrier Potential - Barrier Potential refers to the potential required to overcome the barrier. (Measured in Volt)
Applied reverse bias potential - The Applied reverse bias potential to a diode raises the potential barrier because p-type material connected to the negative terminal and pulls the holes away from the junction. (Measured in Volt)
Constant B- Constant B is one of the constant in Andrade's equation.
STEP 1: Convert Input(s) to Base Unit
Constant a: 10 --> No Conversion Required
Barrier Potential: 5 Volt --> 5 Volt No Conversion Required
Applied reverse bias potential: 2 Volt --> 2 Volt No Conversion Required
Constant B: 10 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
CT = a/(Vb-V)^B --> 10/(5-2)^10
Evaluating ... ...
CT = 0.000169350878084303
STEP 3: Convert Result to Output's Unit
0.000169350878084303 Farad --> No Conversion Required
FINAL ANSWER
0.000169350878084303 Farad <-- Capacitance of varactor Diode
(Calculation completed in 00.000 seconds)

## < 10+ Basic Electronics Calculators

Conductivity in semiconductors in terms of mobility of electrons and holes
conductivity = Concentration of electrons in the conduction band*[Charge-e]*Mobility of holes+Majority carrier electron concentration*[Charge-e]*Mobility of electron Go
Intrinsic concentration
intrinsic_carrier_concentration = sqrt(Coefficient related to specific semiconductor*(Temperature)^3*e^-(Semiconductor bandgap energy/(2*[BoltZ]*Temperature))) Go
Conductivity of extrinsic semiconductor for p-type
conductivity_of_extrinsic_semiconductors_n_type = Acceptor concentration*[Charge-e]*Mobility of electron Go
Conductivity of extrinsic semiconductors for n-type
conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes Go
Majority carrier concentration in a Semiconductor
majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration Go
Electron diffusion length in terms of relaxation time
electron_diffusion_length = sqrt(Electron Diffusion Constant*Relaxation time) Go
Conductivity in metals in terms of number of electrons
conductivity = Number of Electrons*Mobility of electron*[Charge-e] Go
Einstein's Equation
voltage_equivalent_of_temperature = Electron Diffusion Constant/Mobility of electron Go
Mobility of a charge carriers
mobility_of_charge_carriers = Drift Velocity/Electric field intensity Go
Thermal Voltage or voltage equivalent of temperature
thermal_voltage = Temperature/11600 Go

### Capacitance of the varactor diode Formula

capacitance_of_varactor_diode = Constant a/(Barrier Potential-Applied reverse bias potential)^Constant B
CT = a/(Vb-V)^B

## What is a varactor diode?

The diode whose internal capacitance varies with the variation of the reverse voltage type of diode is known as the Varactor diode. It is used for storing the charge. The varactor diode always works in reverse bias, and it is a voltage-dependent semiconductor device.

## How to Calculate Capacitance of the varactor diode?

Capacitance of the varactor diode calculator uses capacitance_of_varactor_diode = Constant a/(Barrier Potential-Applied reverse bias potential)^Constant B to calculate the Capacitance of varactor Diode, The capacitance of the varactor diode formula can be varied by varying the magnitude of the reverse bias voltage as it varies the width of the depletion region, d. Capacitance of varactor Diode and is denoted by CT symbol.

How to calculate Capacitance of the varactor diode using this online calculator? To use this online calculator for Capacitance of the varactor diode, enter Constant a (a), Barrier Potential (Vb), Applied reverse bias potential (V) and Constant B (B) and hit the calculate button. Here is how the Capacitance of the varactor diode calculation can be explained with given input values -> 0.000169 = 10/(5-2)^10.

### FAQ

What is Capacitance of the varactor diode?
The capacitance of the varactor diode formula can be varied by varying the magnitude of the reverse bias voltage as it varies the width of the depletion region, d and is represented as CT = a/(Vb-V)^B or capacitance_of_varactor_diode = Constant a/(Barrier Potential-Applied reverse bias potential)^Constant B. Constant a is the empirical constant given according to conditions in sutherland equation. , Barrier Potential refers to the potential required to overcome the barrier, The Applied reverse bias potential to a diode raises the potential barrier because p-type material connected to the negative terminal and pulls the holes away from the junction and Constant B is one of the constant in Andrade's equation.
How to calculate Capacitance of the varactor diode?
The capacitance of the varactor diode formula can be varied by varying the magnitude of the reverse bias voltage as it varies the width of the depletion region, d is calculated using capacitance_of_varactor_diode = Constant a/(Barrier Potential-Applied reverse bias potential)^Constant B. To calculate Capacitance of the varactor diode, you need Constant a (a), Barrier Potential (Vb), Applied reverse bias potential (V) and Constant B (B). With our tool, you need to enter the respective value for Constant a, Barrier Potential, Applied reverse bias potential and Constant B and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Capacitance of varactor Diode?
In this formula, Capacitance of varactor Diode uses Constant a, Barrier Potential, Applied reverse bias potential and Constant B. We can use 10 other way(s) to calculate the same, which is/are as follows -
• thermal_voltage = Temperature/11600
• mobility_of_charge_carriers = Drift Velocity/Electric field intensity
• majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration
• intrinsic_carrier_concentration = sqrt(Coefficient related to specific semiconductor*(Temperature)^3*e^-(Semiconductor bandgap energy/(2*[BoltZ]*Temperature)))
• voltage_equivalent_of_temperature = Electron Diffusion Constant/Mobility of electron
• electron_diffusion_length = sqrt(Electron Diffusion Constant*Relaxation time)
• conductivity = Number of Electrons*Mobility of electron*[Charge-e]
• conductivity = Concentration of electrons in the conduction band*[Charge-e]*Mobility of holes+Majority carrier electron concentration*[Charge-e]*Mobility of electron
• conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes
• conductivity_of_extrinsic_semiconductors_n_type = Acceptor concentration*[Charge-e]*Mobility of electron
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