## Conductance of Channel of MOSFET using Gate to Source Voltage Solution

STEP 0: Pre-Calculation Summary
Formula Used
Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)
G = μs*Cox*Wc/L*(Vgs-Vth)
This formula uses 7 Variables
Variables Used
Conductance of Channel - (Measured in Siemens) - The conductance of channel is typically defined as the ratio of the current passing through the channel to the voltage across it.
Mobility of Electrons at Surface of Channel - (Measured in Square Meter per Volt per Second) - The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Channel Width - (Measured in Meter) - Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).
Channel Length - (Measured in Meter) - Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).
Gate-Source Voltage - (Measured in Volt) - Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
STEP 1: Convert Input(s) to Base Unit
Mobility of Electrons at Surface of Channel: 38 Square Meter per Volt per Second --> 38 Square Meter per Volt per Second No Conversion Required
Channel Width: 10 Micrometer --> 1E-05 Meter (Check conversion ​here)
Channel Length: 100 Micrometer --> 0.0001 Meter (Check conversion ​here)
Gate-Source Voltage: 4 Volt --> 4 Volt No Conversion Required
Threshold Voltage: 2.3 Volt --> 2.3 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
G = μs*Cox*Wc/L*(Vgs-Vth) --> 38*0.00094*1E-05/0.0001*(4-2.3)
Evaluating ... ...
G = 0.0060724
STEP 3: Convert Result to Output's Unit
0.0060724 Siemens -->6.0724 Millisiemens (Check conversion ​here)
6.0724 Millisiemens <-- Conductance of Channel
(Calculation completed in 00.004 seconds)
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## <Voltage Calculators

Output Voltage at Drain Q1 of MOSFET given Common-Mode Signal
​ Go Drain Voltage Q1 = -Output Resistance*(Transconductance*Common Mode Input Signal)/(1+(2*Transconductance*Output Resistance))
Output Voltage at Drain Q2 of MOSFET given Common-Mode Signal
​ Go Drain Voltage Q2 = -(Output Resistance/((1/Transconductance)+2*Output Resistance))*Common Mode Input Signal
Output Voltage at Drain Q1 of MOSFET
​ Go Drain Voltage Q1 = -(Output Resistance*Total Current)
Output Voltage at Drain Q2 of MOSFET
​ Go Drain Voltage Q2 = -(Output Resistance*Total Current)

## <MOSFET Characterstics Calculators

Voltage Gain given Load Resistance of MOSFET
​ Go Voltage Gain = Transconductance*(1/(1/Load Resistance+1/Output Resistance))/(1+Transconductance*Source Resistance)
Maximum Voltage Gain at Bias Point
​ Go Maximum Voltage Gain = 2*(Supply Voltage-Effective Voltage)/(Effective Voltage)
Voltage Gain given Drain Voltage
​ Go Voltage Gain = (Drain Current*Load Resistance*2)/Effective Voltage
Maximum Voltage Gain given all Voltages
​ Go Maximum Voltage Gain = (Supply Voltage-0.3)/Thermal Voltage

## Conductance of Channel of MOSFET using Gate to Source Voltage Formula

Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)
G = μs*Cox*Wc/L*(Vgs-Vth)

## What are the applications of conductance in MOSFET?

The applications of conductance in MOSFETs are vast and varied. They include high-frequency amplifiers, switches, voltage regulators, oscillators, and digital logic circuits. Conductance also plays a crucial role in MOSFETs' ability to control current flow and manipulate signal polarity, making them an essential component in modern electronic systems.

## How to Calculate Conductance of Channel of MOSFET using Gate to Source Voltage?

Conductance of Channel of MOSFET using Gate to Source Voltage calculator uses Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage) to calculate the Conductance of Channel, The conductance of channel of MOSFET using Gate to Source Voltage is defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system. Conductance of Channel is denoted by G symbol.

How to calculate Conductance of Channel of MOSFET using Gate to Source Voltage using this online calculator? To use this online calculator for Conductance of Channel of MOSFET using Gate to Source Voltage, enter Mobility of Electrons at Surface of Channel s), Oxide Capacitance (Cox), Channel Width (Wc), Channel Length (L), Gate-Source Voltage (Vgs) & Threshold Voltage (Vth) and hit the calculate button. Here is how the Conductance of Channel of MOSFET using Gate to Source Voltage calculation can be explained with given input values -> 6072.4 = 38*0.00094*1E-05/0.0001*(4-2.3).

### FAQ

What is Conductance of Channel of MOSFET using Gate to Source Voltage?
The conductance of channel of MOSFET using Gate to Source Voltage is defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system and is represented as G = μs*Cox*Wc/L*(Vgs-Vth) or Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage). The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor, Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits, Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz), Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET), Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
How to calculate Conductance of Channel of MOSFET using Gate to Source Voltage?
The conductance of channel of MOSFET using Gate to Source Voltage is defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system is calculated using Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage). To calculate Conductance of Channel of MOSFET using Gate to Source Voltage, you need Mobility of Electrons at Surface of Channel s), Oxide Capacitance (Cox), Channel Width (Wc), Channel Length (L), Gate-Source Voltage (Vgs) & Threshold Voltage (Vth). With our tool, you need to enter the respective value for Mobility of Electrons at Surface of Channel, Oxide Capacitance, Channel Width, Channel Length, Gate-Source Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Conductance of Channel?
In this formula, Conductance of Channel uses Mobility of Electrons at Surface of Channel, Oxide Capacitance, Channel Width, Channel Length, Gate-Source Voltage & Threshold Voltage. We can use 1 other way(s) to calculate the same, which is/are as follows -
• Conductance of Channel = 1/Linear Resistance
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