Energy Band Gap Calculator

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Semiconductor Characteristics

Charge Carrier Characteristics

Diode Characteristics

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✖Energy Band Gap at 0K describes the influence of photons on band-gap energy at 0K temperature.ⓘ Energy Band Gap at 0K [E_G0]			+10% -10%
✖Temperature is the degree or intensity of heat present in a substance or object.ⓘ Temperature [T]			+10% -10%
✖Material Specific Constant is defined as the constant which is determined experimentally and differs from material to material.ⓘ Material Specific Constant [β_k]			+10% -10%

✖Energy Band Gap describes the influence of photons on band-gap energy.ⓘ Energy Band Gap [E_g]

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Formula

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Energy Band Gap

Formula

`"E"_{"g"} = "E"_{"G0"}-("T"*"β"_{"k"})`

Example

`"0.765601eV"="0.87eV"-("290K"*"5.7678e-23J/K")`

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Energy Band Gap Solution

STEP 0: Pre-Calculation Summary

Formula Used

Energy Band Gap = Energy Band Gap at 0K-(Temperature*Material Specific Constant)
E_g = E_G0-(T*β_k)
This formula uses 4 Variables

Variables Used

Energy Band Gap - (Measured in Joule) - Energy Band Gap describes the influence of photons on band-gap energy.
Energy Band Gap at 0K - (Measured in Joule) - Energy Band Gap at 0K describes the influence of photons on band-gap energy at 0K temperature.
Temperature - (Measured in Kelvin) - Temperature is the degree or intensity of heat present in a substance or object.
Material Specific Constant - (Measured in Joule per Kelvin) - Material Specific Constant is defined as the constant which is determined experimentally and differs from material to material.

STEP 1: Convert Input(s) to Base Unit

Energy Band Gap at 0K: 0.87 Electron-Volt --> 1.39389427710001E-19 Joule (Check conversion here)
Temperature: 290 Kelvin --> 290 Kelvin No Conversion Required
Material Specific Constant: 5.7678E-23 Joule per Kelvin --> 5.7678E-23 Joule per Kelvin No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

E_g = E_G0-(T*β_k) --> 1.39389427710001E-19-(290*5.7678E-23)

Evaluating ... ...

E_g = 1.22662807710001E-19

STEP 3: Convert Result to Output's Unit

1.22662807710001E-19 Joule -->0.765600694836947 Electron-Volt (Check conversion here)

FINAL ANSWER

0.765600694836947 ≈ 0.765601 Electron-Volt <-- Energy Band Gap

(Calculation completed in 00.004 seconds)

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Created by Akshada Kulkarni

National Institute of Information Technology (NIIT), Neemrana

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< 13 Semiconductor Characteristics Calculators

Conductivity in Semiconductors

Go Conductivity = (Electron Density*[Charge-e]*Mobility of Electron)+(Holes Density*[Charge-e]*Mobility of Holes)

Fermi Dirac Distribution Function

Go Fermi Dirac Distribution Function = 1/(1+e^((Fermi Level Energy-Fermi Level Energy)/([BoltZ]*Temperature)))

Conductivity of Extrinsic Semiconductors for N-type

Go Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron

Conductivity of Extrinsic Semiconductor for P-Type

Go Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes

Electron Diffusion Length

Go Electron Diffusion Length = sqrt(Electron Diffusion Constant*Minority Carrier Lifetime)

Energy Band Gap

Go Energy Band Gap = Energy Band Gap at 0K-(Temperature*Material Specific Constant)

Majority Carrier Concentration in Semiconductor for p-type

Go Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration

Majority Carrier Concentration in Semiconductor

Go Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration

Fermi Level of Intrinsic Semiconductors

Go Fermi Level Intrinsic Semiconductor = (Conduction Band Energy+Valance Band Energy)/2

Drift Current Density

Go Drift Current Density = Holes Current Density+Electron Current Density

Mobility of Charge Carriers

Go Charge Carriers Mobility = Drift Speed/Electric Field Intensity

Saturation Voltage using Threshold Voltage

Go Saturation Voltage = Gate Source Voltage-Threshold Voltage

Electric Field due to Hall Voltage

Go Hall Electric Field = Hall Voltage/Conductor Width

Energy Band Gap Formula

Energy Band Gap = Energy Band Gap at 0K-(Temperature*Material Specific Constant)
E_g = E_G0-(T*β_k)

What are Extrinsic Semiconductors?

Extrinsic semiconductors are just intrinsic semiconductors that have been doped with impurity atoms (one dimensional substitutional defects in this case). Doping is the process where semiconductors increase their electrical conductivity by introducing atoms of different elements into their lattice.

What is p-type extrinsic semiconductor?

A p-type semiconductor is created when trivalent elements are used to dope pure semiconductors, like Si and Ge.when a semiconductor is doped with a trivalent atom, holes are the majority charge carriers. On the other hand, the free electrons are the minority charge carriers. Therefore, such extrinsic semiconductors are called p-type semiconductors. In a p-type semiconductor,
Number of holes >> Number of free electrons

How to Calculate Energy Band Gap?

Energy Band Gap calculator uses Energy Band Gap = Energy Band Gap at 0K-(Temperature*Material Specific Constant) to calculate the Energy Band Gap, Energy Band Gap describes the energy difference between the highest energy level of the valence band (the band of electrons that participate in chemical bonding) and the lowest energy level of the conduction band (the band of electrons that can move freely and conduct electricity) in a solid material. Energy Band Gap is denoted by E_g symbol.

How to calculate Energy Band Gap using this online calculator? To use this online calculator for Energy Band Gap, enter Energy Band Gap at 0K (E_G0), Temperature (T) & Material Specific Constant (β_k) and hit the calculate button. Here is how the Energy Band Gap calculation can be explained with given input values -> 4.8E+18 = 1.39389427710001E-19-(290*5.7678E-23).

FAQ

What is Energy Band Gap?

Energy Band Gap describes the energy difference between the highest energy level of the valence band (the band of electrons that participate in chemical bonding) and the lowest energy level of the conduction band (the band of electrons that can move freely and conduct electricity) in a solid material and is represented as E_g = E_G0-(T*β_k) or Energy Band Gap = Energy Band Gap at 0K-(Temperature*Material Specific Constant). Energy Band Gap at 0K describes the influence of photons on band-gap energy at 0K temperature, Temperature is the degree or intensity of heat present in a substance or object & Material Specific Constant is defined as the constant which is determined experimentally and differs from material to material.

How to calculate Energy Band Gap?

Energy Band Gap describes the energy difference between the highest energy level of the valence band (the band of electrons that participate in chemical bonding) and the lowest energy level of the conduction band (the band of electrons that can move freely and conduct electricity) in a solid material is calculated using Energy Band Gap = Energy Band Gap at 0K-(Temperature*Material Specific Constant). To calculate Energy Band Gap, you need Energy Band Gap at 0K (E_G0), Temperature (T) & Material Specific Constant (β_k). With our tool, you need to enter the respective value for Energy Band Gap at 0K, Temperature & Material Specific Constant and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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