DC Bias Current of MOSFET Solution

STEP 0: Pre-Calculation Summary
Formula Used
DC Bias Current = 1/2*Transconductance Parameter*(Gate-Source Voltage-Threshold Voltage)^2
Ib = 1/2*kn*(Vgs-Vth)^2
This formula uses 4 Variables
Variables Used
DC Bias Current - (Measured in Ampere) - DC bias current is the constant current that flows through a circuit or device to establish a certain operating point or bias point.
Transconductance Parameter - (Measured in Ampere per Square Volt) - Transconductance parameter is a crucial parameter in electronic devices and circuits, which helps to describe and quantify the input-output relationship between voltage and current.
Gate-Source Voltage - (Measured in Volt) - Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
STEP 1: Convert Input(s) to Base Unit
Transconductance Parameter: 10.5 Ampere per Square Volt --> 10.5 Ampere per Square Volt No Conversion Required
Gate-Source Voltage: 4 Volt --> 4 Volt No Conversion Required
Threshold Voltage: 2.3 Volt --> 2.3 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ib = 1/2*kn*(Vgs-Vth)^2 --> 1/2*10.5*(4-2.3)^2
Evaluating ... ...
Ib = 15.1725
STEP 3: Convert Result to Output's Unit
15.1725 Ampere -->15172.5 Milliampere (Check conversion here)
FINAL ANSWER
15172.5 Milliampere <-- DC Bias Current
(Calculation completed in 00.020 seconds)

Credits

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Birsa Institute of Technology (BIT), Sindri
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Jaipur Engineering College and Research Centre (JECRC), Jaipur
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18 Biasing Calculators

Collector Current given Current Gain Mosfet
Go Collector Current = (Current Gain*(Negative Supply Voltage-Base Emitter Voltage))/(Base Resistance+(Current Gain+1)*Emitter Resistance)
Input Biasing Current of Mosfet
Go Input Biasing Current = (Negative Supply Voltage-Base Emitter Voltage)/(Base Resistance+(Current Gain+1)*Emitter Resistance)
Collector Emitter Voltage given Collector Resistance
Go Collector Emitter Voltage = Collector Supply Voltage-(Collector Current+Input Biasing Current)*Collector Load Resistor
Collector Current given Current Gain
Go Collector Current = Current Gain*(Collector Supply Voltage-Base Emitter Voltage)/Base Resistance
Collector Emitter Voltage
Go Collector Emitter Voltage = Collector Supply Voltage-Collector Load Resistor*Collector Current
DC Bias Current of MOSFET
Go DC Bias Current = 1/2*Transconductance Parameter*(Gate-Source Voltage-Threshold Voltage)^2
Collector Voltage with respect to Ground
Go Collector Voltage = Collector Supply Voltage-Collector Current*Collector Load Resistor
Emitter Voltage with respect to Ground
Go Emitter Voltage = -Negative Supply Voltage+(Emitter Current*Emitter Resistance)
Base Current of MOSFET
Go Input Biasing Current = (Bias Voltage-Base Emitter Voltage)/Base Resistance
DC Bias Output Voltage at Drain
Go Output Voltage = Supply Voltage-Load Resistance*DC Bias Current
Collector Current in Saturation
Go Collector Current Saturation = Collector Supply Voltage/Collector Load Resistor
DC Bias Current of MOSFET using Overdrive Voltage
Go DC Bias Current = 1/2*Transconductance Parameter*Effective Voltage^2
Input Bias Current
Go DC Bias Current = (Input Bias Current 1+Input Bias Current 2)/2
Bias Voltage of MOSFET
Go Total Instantaneous Bias Voltage = DC Bias Voltage+DC Voltage
Emitter Current of Mosfet
Go Emitter Current = Collector Current+Input Biasing Current
Collector Current of Mosfet
Go Collector Current = Current Gain*Input Biasing Current
Base Voltage with respect to Ground
Go Base Voltage = Emitter Voltage+Base Emitter Voltage
Bias Current in Differential Pair
Go DC Bias Current = Drain Current 1+Drain Current 2

DC Bias Current of MOSFET Formula

DC Bias Current = 1/2*Transconductance Parameter*(Gate-Source Voltage-Threshold Voltage)^2
Ib = 1/2*kn*(Vgs-Vth)^2

What is DC operating point of MOSFET?

This calculates the DC operating point, also known as the bias point, of a circuit. This is the steady-state voltage or current at a specified pin of an active device with no input signal applied.

What is the different type of biasing in MOSFET?

Biasing of MOSFETs: Two common type biasing circuits, voltage divider bias and drain feedback bias are considered.

How to Calculate DC Bias Current of MOSFET?

DC Bias Current of MOSFET calculator uses DC Bias Current = 1/2*Transconductance Parameter*(Gate-Source Voltage-Threshold Voltage)^2 to calculate the DC Bias Current, The DC bias current of MOSFET is given by the d.c. drain current and drain-to-source voltage and it is always on the load line. It is also the amount of current that an electronic device needs in DC Biasing condition, where an extra load is added and voltage is given at junctions as per the type of biasing. DC Bias Current is denoted by Ib symbol.

How to calculate DC Bias Current of MOSFET using this online calculator? To use this online calculator for DC Bias Current of MOSFET, enter Transconductance Parameter (kn), Gate-Source Voltage (Vgs) & Threshold Voltage (Vth) and hit the calculate button. Here is how the DC Bias Current of MOSFET calculation can be explained with given input values -> 1.5E+7 = 1/2*10.5*(4-2.3)^2.

FAQ

What is DC Bias Current of MOSFET?
The DC bias current of MOSFET is given by the d.c. drain current and drain-to-source voltage and it is always on the load line. It is also the amount of current that an electronic device needs in DC Biasing condition, where an extra load is added and voltage is given at junctions as per the type of biasing and is represented as Ib = 1/2*kn*(Vgs-Vth)^2 or DC Bias Current = 1/2*Transconductance Parameter*(Gate-Source Voltage-Threshold Voltage)^2. Transconductance parameter is a crucial parameter in electronic devices and circuits, which helps to describe and quantify the input-output relationship between voltage and current, Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
How to calculate DC Bias Current of MOSFET?
The DC bias current of MOSFET is given by the d.c. drain current and drain-to-source voltage and it is always on the load line. It is also the amount of current that an electronic device needs in DC Biasing condition, where an extra load is added and voltage is given at junctions as per the type of biasing is calculated using DC Bias Current = 1/2*Transconductance Parameter*(Gate-Source Voltage-Threshold Voltage)^2. To calculate DC Bias Current of MOSFET, you need Transconductance Parameter (kn), Gate-Source Voltage (Vgs) & Threshold Voltage (Vth). With our tool, you need to enter the respective value for Transconductance Parameter, Gate-Source Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate DC Bias Current?
In this formula, DC Bias Current uses Transconductance Parameter, Gate-Source Voltage & Threshold Voltage. We can use 3 other way(s) to calculate the same, which is/are as follows -
  • DC Bias Current = 1/2*Transconductance Parameter*Effective Voltage^2
  • DC Bias Current = (Input Bias Current 1+Input Bias Current 2)/2
  • DC Bias Current = Drain Current 1+Drain Current 2
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