Transconductance in MOSFET Calculator

✖Drain current is the current that flows between the drain and the source terminals of a field-effect transistor (FET), which is a type of transistor commonly used in electronic circuits.ⓘ Drain Current [i_d]			+10% -10%
✖Overdrive voltage is a term used in electronics and refers to the voltage level applied to a device or component that exceeds its normal operating voltage.ⓘ Overdrive Voltage [V_ov]			+10% -10%

✖Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.ⓘ Transconductance in MOSFET [g_m]

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Transconductance in MOSFET

Formula

`"g"_{"m"} = (2*"i"_{"d"})/"V"_{"ov"}`

Example

`"0.5mS"=(2*"0.08mA")/"0.32V"`

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Transconductance in MOSFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Transconductance = (2*Drain Current)/Overdrive Voltage
g_m = (2*i_d)/V_ov
This formula uses 3 Variables

Variables Used

Transconductance - (Measured in Siemens) - Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.
Drain Current - (Measured in Ampere) - Drain current is the current that flows between the drain and the source terminals of a field-effect transistor (FET), which is a type of transistor commonly used in electronic circuits.
Overdrive Voltage - (Measured in Volt) - Overdrive voltage is a term used in electronics and refers to the voltage level applied to a device or component that exceeds its normal operating voltage.

STEP 1: Convert Input(s) to Base Unit

Drain Current: 0.08 Milliampere --> 8E-05 Ampere (Check conversion here)
Overdrive Voltage: 0.32 Volt --> 0.32 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

g_m = (2*i_d)/V_ov --> (2*8E-05)/0.32

Evaluating ... ...

g_m = 0.0005

STEP 3: Convert Result to Output's Unit

0.0005 Siemens -->0.5 Millisiemens (Check conversion here)

FINAL ANSWER

0.5 Millisiemens <-- Transconductance

(Calculation completed in 00.004 seconds)

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< 16 Transconductance Calculators

MOSFET Transconductance using Process Transconductance Parameter

Go Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage))

Transconductance given Process Transconductance Parameter

Go Transconductance = Process Transconductance Parameter*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)

Transconductance given Drain Current

Go Transconductance = sqrt(2*Process Transconductance Parameter*Aspect Ratio*Drain Current)

MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage

Go Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage)

Process Transconductance given Transconductance and Drain Current

Go Process Transconductance Parameter = Transconductance^2/(2*Aspect Ratio*Drain Current)

Drain Current given process transconductance and transconductance

Go Drain Current = Transconductance^2/(2*Aspect Ratio*Process Transconductance Parameter)

MOSFET Transconductance given Transconductance Parameter

Go Transconductance = Transconductance Parameter*(Gate-Source Voltage-Threshold Voltage)

Transconductance using Process Transconductance Parameter and Overdrive Voltage

Go Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage

MOSFET Transconductance Parameter using Process Transconductance

Go Transconductance Parameter = Process Transconductance Parameter*Aspect Ratio

Body Effect on Transconductance

Go Body Transconductance = Change in Threshold to Base Voltage*Transconductance

Back Gate Transconductance

Go Back Gate Transconductance = Transconductance*Voltage Efficiency

MOSFET Transconductance given Overdrive Voltage

Go Transconductance = Transconductance Parameter*Overdrive Voltage

Process Transconductance Parameter of MOSFET

Go Transconductance Parameter = Transconductance/Overdrive Voltage

MOSFET Transconductance

Go Transconductance = Change in Drain Current/Gate-Source Voltage

Drain Current using Transconductance

Go Drain Current = (Overdrive Voltage)*Transconductance/2

Transconductance in MOSFET

Go Transconductance = (2*Drain Current)/Overdrive Voltage

< 15 MOSFET Characterstics Calculators

Conductance of Channel of MOSFET using Gate to Source Voltage

Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)

Voltage Gain given Load Resistance of MOSFET

Go Voltage Gain = Transconductance*(1/(1/Load Resistance+1/Output Resistance))/(1+Transconductance*Source Resistance)

Transition Frequency of MOSFET

Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))

Maximum Voltage Gain at Bias Point

Go Maximum Voltage Gain = 2*(Supply Voltage-Effective Voltage)/(Effective Voltage)

Voltage Gain using Small Signal

Go Voltage Gain = Transconductance*1/(1/Load Resistance+1/Finite Resistance)

Gate to Source Channel Width of MOSFET

Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)

Voltage Gain given Drain Voltage

Go Voltage Gain = (Drain Current*Load Resistance*2)/Effective Voltage

Body Effect on Transconductance

Go Body Transconductance = Change in Threshold to Base Voltage*Transconductance

Saturation Voltage of MOSFET

Go Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage

Bias Voltage of MOSFET

Go Total Instantaneous Bias Voltage = DC Bias Voltage+DC Voltage

Maximum Voltage Gain given all Voltages

Go Maximum Voltage Gain = (Supply Voltage-0.3)/Thermal Voltage

Amplification Factor in Small Signal MOSFET Model

Go Amplification Factor = Transconductance*Output Resistance

Treshold Voltage of MOSFET

Go Threshold Voltage = Gate-Source Voltage-Effective Voltage

Transconductance in MOSFET

Go Transconductance = (2*Drain Current)/Overdrive Voltage

Conductance in Linear Resistance of MOSFET

Go Conductance of Channel = 1/Linear Resistance

Transconductance in MOSFET Formula

Transconductance = (2*Drain Current)/Overdrive Voltage
g_m = (2*i_d)/V_ov

What is Bias Voltage?

The bias voltage is the amount of voltage that an electronic device needs in order to power on and function. Bias voltage must be carefully chosen to operate the device, meaning the power to operate the device must be at a specific level. With too little bias voltage, the power that is sent to the device may be insufficient to turn it on and, thus, the device will not power on. With too much bias voltage, the device may receive too much current and can be destroyed. Check with the manufacturer of the device in use to check how much bias voltage it should receive.

How to Calculate Transconductance in MOSFET?

Transconductance in MOSFET calculator uses Transconductance = (2*Drain Current)/Overdrive Voltage to calculate the Transconductance, Transconductance in MOSFET depends on three parameters (W/L), Veff and Id. Two of which can be chosen independently. Here effective voltage Veff and at a particular current Id is used. The required W/L ratio can then be found and the resulting gm determined. Transconductance is denoted by g_m symbol.

How to calculate Transconductance in MOSFET using this online calculator? To use this online calculator for Transconductance in MOSFET, enter Drain Current (i_d) & Overdrive Voltage (V_ov) and hit the calculate button. Here is how the Transconductance in MOSFET calculation can be explained with given input values -> 500 = (2*8E-05)/0.32.

FAQ

What is Transconductance in MOSFET?

Transconductance in MOSFET depends on three parameters (W/L), Veff and Id. Two of which can be chosen independently. Here effective voltage Veff and at a particular current Id is used. The required W/L ratio can then be found and the resulting gm determined and is represented as g_m = (2*i_d)/V_ov or Transconductance = (2*Drain Current)/Overdrive Voltage. Drain current is the current that flows between the drain and the source terminals of a field-effect transistor (FET), which is a type of transistor commonly used in electronic circuits & Overdrive voltage is a term used in electronics and refers to the voltage level applied to a device or component that exceeds its normal operating voltage.

How to calculate Transconductance in MOSFET?

Transconductance in MOSFET depends on three parameters (W/L), Veff and Id. Two of which can be chosen independently. Here effective voltage Veff and at a particular current Id is used. The required W/L ratio can then be found and the resulting gm determined is calculated using Transconductance = (2*Drain Current)/Overdrive Voltage. To calculate Transconductance in MOSFET, you need Drain Current (i_d) & Overdrive Voltage (V_ov). With our tool, you need to enter the respective value for Drain Current & Overdrive Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Transconductance?

In this formula, Transconductance uses Drain Current & Overdrive Voltage. We can use 6 other way(s) to calculate the same, which is/are as follows -

Transconductance = sqrt(2*Process Transconductance Parameter*Aspect Ratio*Drain Current)
Transconductance = Process Transconductance Parameter*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)
Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage
Transconductance = Transconductance Parameter*(Gate-Source Voltage-Threshold Voltage)
Transconductance = Transconductance Parameter*Overdrive Voltage
Transconductance = Change in Drain Current/Gate-Source Voltage

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