Drain Current Calculator

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Transistor Operating Parameters

Charge Carrier Characteristics

Diode Characteristics

Electrostatic Parameters

Semiconductor Characteristics

✖Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.ⓘ Mobility of Electron [μ_n]			+10% -10%
✖Gate Oxide Capacitance is the ability of a component or circuit to collect and store energy in the form of an electrical charge.ⓘ Gate Oxide Capacitance [C_ox]			+10% -10%
✖Gate Junction Width is defined as the width of gate junction in a semiconductor device.ⓘ Gate Junction Width [W_gate]			+10% -10%
✖Gate length is simply the physical gate length. Channel length is the path that links the charge carriers between the drain and the source.ⓘ Gate Length [L_g]			+10% -10%
✖Gate Source Voltage of a transistor is the voltage that falls across the gate-source terminal of the transistor.ⓘ Gate Source Voltage [V_gs]			+10% -10%
✖Threshold Voltage of transistor is minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.ⓘ Threshold Voltage [V_th]			+10% -10%
✖Drain Source Saturation Voltage is the voltage difference between the emitter and collector terminal required to turn a MOSFET on.ⓘ Drain Source Saturation Voltage [V_ds]			+10% -10%

✖Drain Current is defined as the sub-threshold current which is usually below the threshold current and varies exponentially with gate to source voltage.ⓘ Drain Current [I_D]

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Formula

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Drain Current

Formula

`"I"_{"D"} = "μ"_{"n"}*"C"_{"ox"}*("W"_{"gate"}/"L"_{"g"})*("V"_{"gs"}-"V"_{"th"})*"V"_{"ds"}`

Example

`"891mA"="180m²/V*s"*"75nF"*("230μm"/"2.3nm")*("1.25V"-"0.7V")*"1.2V"`

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Drain Current Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current = Mobility of Electron*Gate Oxide Capacitance*(Gate Junction Width/Gate Length)*(Gate Source Voltage-Threshold Voltage)*Drain Source Saturation Voltage
I_D = μ_n*C_ox*(W_gate/L_g)*(V_gs-V_th)*V_ds
This formula uses 8 Variables

Variables Used

Drain Current - (Measured in Ampere) - Drain Current is defined as the sub-threshold current which is usually below the threshold current and varies exponentially with gate to source voltage.
Mobility of Electron - (Measured in Square Meter per Volt per Second) - Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.
Gate Oxide Capacitance - (Measured in Farad) - Gate Oxide Capacitance is the ability of a component or circuit to collect and store energy in the form of an electrical charge.
Gate Junction Width - (Measured in Meter) - Gate Junction Width is defined as the width of gate junction in a semiconductor device.
Gate Length - (Measured in Meter) - Gate length is simply the physical gate length. Channel length is the path that links the charge carriers between the drain and the source.
Gate Source Voltage - (Measured in Volt) - Gate Source Voltage of a transistor is the voltage that falls across the gate-source terminal of the transistor.
Threshold Voltage - (Measured in Volt) - Threshold Voltage of transistor is minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.
Drain Source Saturation Voltage - (Measured in Volt) - Drain Source Saturation Voltage is the voltage difference between the emitter and collector terminal required to turn a MOSFET on.

STEP 1: Convert Input(s) to Base Unit

Mobility of Electron: 180 Square Meter per Volt per Second --> 180 Square Meter per Volt per Second No Conversion Required
Gate Oxide Capacitance: 75 Nanofarad --> 7.5E-08 Farad (Check conversion here)
Gate Junction Width: 230 Micrometer --> 0.00023 Meter (Check conversion here)
Gate Length: 2.3 Nanometer --> 2.3E-09 Meter (Check conversion here)
Gate Source Voltage: 1.25 Volt --> 1.25 Volt No Conversion Required
Threshold Voltage: 0.7 Volt --> 0.7 Volt No Conversion Required
Drain Source Saturation Voltage: 1.2 Volt --> 1.2 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_D = μ_n*C_ox*(W_gate/L_g)*(V_gs-V_th)*V_ds --> 180*7.5E-08*(0.00023/2.3E-09)*(1.25-0.7)*1.2

Evaluating ... ...

I_D = 0.891

STEP 3: Convert Result to Output's Unit

0.891 Ampere -->891 Milliampere (Check conversion here)

FINAL ANSWER

891 Milliampere <-- Drain Current

(Calculation completed in 00.004 seconds)

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Created by Akshada Kulkarni

National Institute of Information Technology (NIIT), Neemrana

Akshada Kulkarni has created this Calculator and 500+ more calculators!

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< 13 Transistor Operating Parameters Calculators

Drain Current

Go Drain Current = Mobility of Electron*Gate Oxide Capacitance*(Gate Junction Width/Gate Length)*(Gate Source Voltage-Threshold Voltage)*Drain Source Saturation Voltage

Emitter Efficiency

Go Emitter Efficiency = Electron Diffusion Current/(Electron Diffusion Current+Hole Diffusion Current)

Base Current using Current Amplification Factor

Go Base Current = Emitter Current*(1-Current Amplification Factor)-Collector Base Leakage Current

Collector-Emitter Voltage

Go Collector Emitter Voltage = Common Collector Voltage-Collector Current*Collector Resistance

Collector to Emitter Leakage Current

Go Collector Emitter Leakage Current = (Base Transport Factor+1)*Collector Base Leakage Current

Current Amplification Factor using Base Transport Factor

Go Current Amplification Factor = Base Transport Factor/(Base Transport Factor+1)

Collector Current using Current Amplification Factor

Go Collector Current = Current Amplification Factor*Emitter Current

Current Amplification Factor

Go Current Amplification Factor = Collector Current/Emitter Current

Collector Current using Base Transport Factor

Go Collector Current = Base Transport Factor*Base Current

Base Transport Factor

Go Base Transport Factor = Collector Current/Base Current

Emitter Current

Go Emitter Current = Base Current+Collector Current

Common Collector Current Gain

Go Common Collector Current Gain = Base Transport Factor+1

Dynamic Emitter Resistance

Go Dynamic Emitter Resistance = 0.026/Emitter Current

Drain Current Formula

How drain current alters with the gate to source and threshold voltage?

The drain current is zero if the gate-to-source voltage is less than the threshold voltage. The linear expression is only valid if the drain-to-source voltage is much smaller than the gate-to-source voltage minus the threshold voltage. This insures that the velocity, the electric field and the inversion layer charge density is indeed constant between the source and the drain. While there is no drain current if the gate voltage is less than the threshold voltage, the current increases with gate voltage once it is larger than the threshold voltage.

How to Calculate Drain Current?

Drain Current calculator uses Drain Current = Mobility of Electron*Gate Oxide Capacitance*(Gate Junction Width/Gate Length)*(Gate Source Voltage-Threshold Voltage)*Drain Source Saturation Voltage to calculate the Drain Current, Drain Current is defined as the sub threshold current and varies exponentially with gate to source voltage below threshold voltage. Drain Current is denoted by I_D symbol.

How to calculate Drain Current using this online calculator? To use this online calculator for Drain Current, enter Mobility of Electron (μ_n), Gate Oxide Capacitance (C_ox), Gate Junction Width (W_gate), Gate Length (L_g), Gate Source Voltage (V_gs), Threshold Voltage (V_th) & Drain Source Saturation Voltage (V_ds) and hit the calculate button. Here is how the Drain Current calculation can be explained with given input values -> 891000 = 180*7.5E-08*(0.00023/2.3E-09)*(1.25-0.7)*1.2.

FAQ

What is Drain Current?

Drain Current is defined as the sub threshold current and varies exponentially with gate to source voltage below threshold voltage and is represented as I_D = μ_n*C_ox*(W_gate/L_g)*(V_gs-V_th)*V_ds or Drain Current = Mobility of Electron*Gate Oxide Capacitance*(Gate Junction Width/Gate Length)*(Gate Source Voltage-Threshold Voltage)*Drain Source Saturation Voltage. Mobility of electron is defined as the magnitude of average drift velocity per unit electric field, Gate Oxide Capacitance is the ability of a component or circuit to collect and store energy in the form of an electrical charge, Gate Junction Width is defined as the width of gate junction in a semiconductor device, Gate length is simply the physical gate length. Channel length is the path that links the charge carriers between the drain and the source, Gate Source Voltage of a transistor is the voltage that falls across the gate-source terminal of the transistor, Threshold Voltage of transistor is minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals & Drain Source Saturation Voltage is the voltage difference between the emitter and collector terminal required to turn a MOSFET on.

How to calculate Drain Current?

Drain Current is defined as the sub threshold current and varies exponentially with gate to source voltage below threshold voltage is calculated using Drain Current = Mobility of Electron*Gate Oxide Capacitance*(Gate Junction Width/Gate Length)*(Gate Source Voltage-Threshold Voltage)*Drain Source Saturation Voltage. To calculate Drain Current, you need Mobility of Electron (μ_n), Gate Oxide Capacitance (C_ox), Gate Junction Width (W_gate), Gate Length (L_g), Gate Source Voltage (V_gs), Threshold Voltage (V_th) & Drain Source Saturation Voltage (V_ds). With our tool, you need to enter the respective value for Mobility of Electron, Gate Oxide Capacitance, Gate Junction Width, Gate Length, Gate Source Voltage, Threshold Voltage & Drain Source Saturation Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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