Drain Current in Triode Region of PMOS Transistor Calculator

✖The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.ⓘ Process Transconductance Parameter in PMOS [k'_p]			+10% -10%
✖Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.ⓘ Aspect Ratio [WL]			+10% -10%
✖The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.ⓘ Voltage between Gate and Source [V_GS]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_T]			+10% -10%
✖The voltage between drain and source is a key parameter in the operation of a field-effect transistor (FET) and is often referred to as the "drain-source voltage" or VDS.ⓘ Voltage between Drain and Source [V_DS]			+10% -10%

✖Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).ⓘ Drain Current in Triode Region of PMOS Transistor [I_d]

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Formula

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Drain Current in Triode Region of PMOS Transistor

Formula

`"I"_{"d"} = "k'"_{"p"}*"WL"*(("V"_{"GS"}-"modulus"("V"_{"T"}))*"V"_{"DS"}-1/2*("V"_{"DS"})^2)`

Example

`"28.86345mA"="2.1mS"*"6"*(("2.86V"-"modulus"("0.7V"))*"2.45V"-1/2*("2.45V")^2)`

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Drain Current in Triode Region of PMOS Transistor Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)
I_d = k'_p*WL*((V_GS-modulus(V_T))*V_DS-1/2*(V_DS)^2)
This formula uses 1 Functions, 6 Variables

Functions Used

modulus - Modulus of a number is the remainder when that number is divided by another number., modulus

Variables Used

Drain Current - (Measured in Ampere) - Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
Process Transconductance Parameter in PMOS - (Measured in Siemens) - The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Aspect Ratio - Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.
Voltage between Gate and Source - (Measured in Volt) - The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
Voltage between Drain and Source - (Measured in Volt) - The voltage between drain and source is a key parameter in the operation of a field-effect transistor (FET) and is often referred to as the "drain-source voltage" or VDS.

STEP 1: Convert Input(s) to Base Unit

Process Transconductance Parameter in PMOS: 2.1 Millisiemens --> 0.0021 Siemens (Check conversion here)
Aspect Ratio: 6 --> No Conversion Required
Voltage between Gate and Source: 2.86 Volt --> 2.86 Volt No Conversion Required
Threshold Voltage: 0.7 Volt --> 0.7 Volt No Conversion Required
Voltage between Drain and Source: 2.45 Volt --> 2.45 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_d = k'_p*WL*((V_GS-modulus(V_T))*V_DS-1/2*(V_DS)^2) --> 0.0021*6*((2.86-modulus(0.7))*2.45-1/2*(2.45)^2)

Evaluating ... ...

I_d = 0.02886345

STEP 3: Convert Result to Output's Unit

0.02886345 Ampere -->28.86345 Milliampere (Check conversion here)

FINAL ANSWER

28.86345 Milliampere <-- Drain Current

(Calculation completed in 00.020 seconds)

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< 14 P-Channel Enhancement Calculators

Overall Drain Current of PMOS Transistor

Go Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))

Drain Current in Triode Region of PMOS Transistor

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)

Body Effect in PMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Drain Current in Triode Region of PMOS Transistor given Vsd

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source

Drain Current in Saturation Region of PMOS Transistor

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Backgate Effect Parameter in PMOS

Go Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance

Drain Current from Source to Drain

Go Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)

Inversion Layer Charge at Pinch-Off Condition in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)

Drain Current in Saturation Region of PMOS Transistor given Vov

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Inversion Layer Charge in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)

Current in Inversion Channel of PMOS

Go Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)

Current in Inversion Channel of PMOS given Mobility

Go Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel

Overdrive Voltage of PMOS

Go Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)

Process Transconductance Parameter of PMOS

Go Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance

Drain Current in Triode Region of PMOS Transistor Formula

What is drain current in MOSFET?

The drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Vgs characteristic is defined as the subthreshold slope, S, and is one of the most critical performance metrics for MOSFETs in logic applications.

Which way does current flow in a PMOS?

In an NMOS electrons are the charge carriers. So electrons travel from Source to Drain (meaning the current goes from Drain > Source.) In a PMOS holes are the charge carries. So holes travel from Source to Drain.

How to Calculate Drain Current in Triode Region of PMOS Transistor?

Drain Current in Triode Region of PMOS Transistor calculator uses Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2) to calculate the Drain Current, The Drain current in triode region of PMOS transistor where the source is the small voltage and the drain is the biggest voltage(they are interchangeable). In PMOS transistor holes are the charge carriers and current flows because of the holes. Drain Current is denoted by I_d symbol.

How to calculate Drain Current in Triode Region of PMOS Transistor using this online calculator? To use this online calculator for Drain Current in Triode Region of PMOS Transistor, enter Process Transconductance Parameter in PMOS (k'_p), Aspect Ratio (WL), Voltage between Gate and Source (V_GS), Threshold Voltage (V_T) & Voltage between Drain and Source (V_DS) and hit the calculate button. Here is how the Drain Current in Triode Region of PMOS Transistor calculation can be explained with given input values -> 28863.45 = 0.0021*6*((2.86-modulus(0.7))*2.45-1/2*(2.45)^2).

FAQ

What is Drain Current in Triode Region of PMOS Transistor?

The Drain current in triode region of PMOS transistor where the source is the small voltage and the drain is the biggest voltage(they are interchangeable). In PMOS transistor holes are the charge carriers and current flows because of the holes and is represented as I_d = k'_p*WL*((V_GS-modulus(V_T))*V_DS-1/2*(V_DS)^2) or Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2). The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor, Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor, The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET, Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics & The voltage between drain and source is a key parameter in the operation of a field-effect transistor (FET) and is often referred to as the "drain-source voltage" or VDS.

How to calculate Drain Current in Triode Region of PMOS Transistor?

The Drain current in triode region of PMOS transistor where the source is the small voltage and the drain is the biggest voltage(they are interchangeable). In PMOS transistor holes are the charge carriers and current flows because of the holes is calculated using Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2). To calculate Drain Current in Triode Region of PMOS Transistor, you need Process Transconductance Parameter in PMOS (k'_p), Aspect Ratio (WL), Voltage between Gate and Source (V_GS), Threshold Voltage (V_T) & Voltage between Drain and Source (V_DS). With our tool, you need to enter the respective value for Process Transconductance Parameter in PMOS, Aspect Ratio, Voltage between Gate and Source, Threshold Voltage & Voltage between Drain and Source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Current?

In this formula, Drain Current uses Process Transconductance Parameter in PMOS, Aspect Ratio, Voltage between Gate and Source, Threshold Voltage & Voltage between Drain and Source. We can use 4 other way(s) to calculate the same, which is/are as follows -

Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source
Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))
Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)
Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)

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