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Duty Cycle Time in CMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
duty_cycle = (Gates On Critical Path*Effective Capacitance in CMOS*Boltzmann constant*Drain Voltage)/(off current*(10^Drain Voltage))
D = (N*Ceff*kB*vds)/(Ioff*(10^vds))
This formula uses 5 Variables
Variables Used
Gates On Critical Path- Gates On Critical Path total logic gate present
Effective Capacitance in CMOS - Effective Capacitance in CMOS (Measured in Farad)
Boltzmann constant- The Boltzmann constant (kB or k) is the proportionality factor that relates the average relative kinetic energy of particles in a gas with the thermodynamic temperature of the gas
Drain Voltage - Drain Voltage is the voltage that falls across the gate-source terminal of the transistor. (Measured in Volt)
off current - off current Such switch is not existing in the reality,. real switches have normally very small off current which some times called the leakage current (Measured in Ampere)
STEP 1: Convert Input(s) to Base Unit
Gates On Critical Path: 5 --> No Conversion Required
Effective Capacitance in CMOS: 2 Farad --> 2 Farad No Conversion Required
Boltzmann constant: 1.380649 --> No Conversion Required
Drain Voltage: 8 Volt --> 8 Volt No Conversion Required
off current: 0.001 Ampere --> 0.001 Ampere No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
D = (N*Ceff*kB*vds)/(Ioff*(10^vds)) --> (5*2*1.380649*8)/(0.001*(10^8))
Evaluating ... ...
D = 0.0011045192
STEP 3: Convert Result to Output's Unit
0.0011045192 --> No Conversion Required
FINAL ANSWER
0.0011045192 <-- duty Cycle
(Calculation completed in 00.016 seconds)

10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

Duty Cycle Time in CMOS Formula

duty_cycle = (Gates On Critical Path*Effective Capacitance in CMOS*Boltzmann constant*Drain Voltage)/(off current*(10^Drain Voltage))
D = (N*Ceff*kB*vds)/(Ioff*(10^vds))

What is Subthreshold conduction ?

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

How to Calculate Duty Cycle Time in CMOS?

Duty Cycle Time in CMOS calculator uses duty_cycle = (Gates On Critical Path*Effective Capacitance in CMOS*Boltzmann constant*Drain Voltage)/(off current*(10^Drain Voltage)) to calculate the duty Cycle, The Duty Cycle Time in CMOS formula is defined as the ratio of time a load or circuit is ON compared to the time the load or circuit is OFF. Duty cycle, sometimes called "duty factor," is expressed as a percentage of ON time. duty Cycle and is denoted by D symbol.

How to calculate Duty Cycle Time in CMOS using this online calculator? To use this online calculator for Duty Cycle Time in CMOS, enter Gates On Critical Path (N), Effective Capacitance in CMOS (Ceff), Boltzmann constant (kB), Drain Voltage (vds) and off current (Ioff) and hit the calculate button. Here is how the Duty Cycle Time in CMOS calculation can be explained with given input values -> 0.001105 = (5*2*1.380649*8)/(0.001*(10^8)) .

FAQ

What is Duty Cycle Time in CMOS?
The Duty Cycle Time in CMOS formula is defined as the ratio of time a load or circuit is ON compared to the time the load or circuit is OFF. Duty cycle, sometimes called "duty factor," is expressed as a percentage of ON time and is represented as D = (N*Ceff*kB*vds)/(Ioff*(10^vds)) or duty_cycle = (Gates On Critical Path*Effective Capacitance in CMOS*Boltzmann constant*Drain Voltage)/(off current*(10^Drain Voltage)) . Gates On Critical Path total logic gate present, Effective Capacitance in CMOS, The Boltzmann constant (kB or k) is the proportionality factor that relates the average relative kinetic energy of particles in a gas with the thermodynamic temperature of the gas, Drain Voltage is the voltage that falls across the gate-source terminal of the transistor and off current Such switch is not existing in the reality,. real switches have normally very small off current which some times called the leakage current.
How to calculate Duty Cycle Time in CMOS?
The Duty Cycle Time in CMOS formula is defined as the ratio of time a load or circuit is ON compared to the time the load or circuit is OFF. Duty cycle, sometimes called "duty factor," is expressed as a percentage of ON time is calculated using duty_cycle = (Gates On Critical Path*Effective Capacitance in CMOS*Boltzmann constant*Drain Voltage)/(off current*(10^Drain Voltage)) . To calculate Duty Cycle Time in CMOS, you need Gates On Critical Path (N), Effective Capacitance in CMOS (Ceff), Boltzmann constant (kB), Drain Voltage (vds) and off current (Ioff). With our tool, you need to enter the respective value for Gates On Critical Path, Effective Capacitance in CMOS, Boltzmann constant, Drain Voltage and off current and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate duty Cycle?
In this formula, duty Cycle uses Gates On Critical Path, Effective Capacitance in CMOS, Boltzmann constant, Drain Voltage and off current. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • dynamic_power = Drain Voltage^2*frequency*Capacitance
  • drain_voltage = sqrt(dynamic power/frequency*Capacitance)
  • static_power = static current*Drain Voltage
  • static_current = Static power/Drain Voltage
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
  • threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
  • potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
  • potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
Where is the Duty Cycle Time in CMOS calculator used?
Among many, Duty Cycle Time in CMOS calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList}
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