## Emitter Current using Common Emitter Current Gain Solution

STEP 0: Pre-Calculation Summary
Formula Used
Emitter Current = ((Common Emitter Current Gain+1)/Common Emitter Current Gain)*Saturation Current*e^(Base-Emitter Voltage/Thermal Voltage)
Ie = ((β+1)/β)*Isat*e^(VBE/Vt)
This formula uses 1 Constants, 5 Variables
Constants Used
e - Napier's constant Value Taken As 2.71828182845904523536028747135266249
Variables Used
Emitter Current - (Measured in Ampere) - Emitter Current is the amplified output current of a bipolar junction transistor.
Common Emitter Current Gain - Common emitter current gain is influenced by 2 factors: width of base region W, and relative dopings of base region and emitter region. Its range varies from 50-200.
Saturation Current - (Measured in Ampere) - Saturation Current is the diode leakage current density in the absence of light. It is an important parameter which differentiates one diode from another.
Base-Emitter Voltage - (Measured in Volt) - Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor.
Thermal Voltage - (Measured in Volt) - Thermal Voltage is the voltage produced within the p-n junction.
STEP 1: Convert Input(s) to Base Unit
Common Emitter Current Gain: 65 --> No Conversion Required
Saturation Current: 1.675 Milliampere --> 0.001675 Ampere (Check conversion ​here)
Base-Emitter Voltage: 5.15 Volt --> 5.15 Volt No Conversion Required
Thermal Voltage: 4.7 Volt --> 4.7 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ie = ((β+1)/β)*Isat*e^(VBE/Vt) --> ((65+1)/65)*0.001675*e^(5.15/4.7)
Evaluating ... ...
Ie = 0.00508769723342933
STEP 3: Convert Result to Output's Unit
0.00508769723342933 Ampere -->5.08769723342933 Milliampere (Check conversion ​here)
5.08769723342933 5.087697 Milliampere <-- Emitter Current
(Calculation completed in 00.020 seconds)
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## <Emitter Current Calculators

Emitter Current through Minority Carrier Concentration
​ Go Emitter Current = Cross-section Area of Base-Emitter Junction*[Charge-e]*Electron Diffusivity*(-Thermal Equilibrium Concentration/Width of Base Junction)
Emitter Current using Common Emitter Current Gain
​ Go Emitter Current = ((Common Emitter Current Gain+1)/Common Emitter Current Gain)*Saturation Current*e^(Base-Emitter Voltage/Thermal Voltage)
Emitter Current using Transistor Constant
​ Go Emitter Current = (Saturation Current/Common-Base Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage)
Emitter Current using Collector Current and Current Gain
​ Go Emitter Current = ((Common Emitter Current Gain+1)/Common Emitter Current Gain)*Collector Current

## Emitter Current using Common Emitter Current Gain Formula

Emitter Current = ((Common Emitter Current Gain+1)/Common Emitter Current Gain)*Saturation Current*e^(Base-Emitter Voltage/Thermal Voltage)
Ie = ((β+1)/β)*Isat*e^(VBE/Vt)

## What is an emitter current?

The emitter current, Ie, of a transistor is the amplified output current of a bipolar junction transistor.

## How to Calculate Emitter Current using Common Emitter Current Gain?

Emitter Current using Common Emitter Current Gain calculator uses Emitter Current = ((Common Emitter Current Gain+1)/Common Emitter Current Gain)*Saturation Current*e^(Base-Emitter Voltage/Thermal Voltage) to calculate the Emitter Current, The Emitter Current using Common Emitter Current Gain is the amplified output current of a bipolar junction transistor. Emitter Current is denoted by Ie symbol.

How to calculate Emitter Current using Common Emitter Current Gain using this online calculator? To use this online calculator for Emitter Current using Common Emitter Current Gain, enter Common Emitter Current Gain (β), Saturation Current (Isat), Base-Emitter Voltage (VBE) & Thermal Voltage (Vt) and hit the calculate button. Here is how the Emitter Current using Common Emitter Current Gain calculation can be explained with given input values -> 5087.697 = ((65+1)/65)*0.001675*e^(5.15/4.7).

### FAQ

What is Emitter Current using Common Emitter Current Gain?
The Emitter Current using Common Emitter Current Gain is the amplified output current of a bipolar junction transistor and is represented as Ie = ((β+1)/β)*Isat*e^(VBE/Vt) or Emitter Current = ((Common Emitter Current Gain+1)/Common Emitter Current Gain)*Saturation Current*e^(Base-Emitter Voltage/Thermal Voltage). Common emitter current gain is influenced by 2 factors: width of base region W, and relative dopings of base region and emitter region. Its range varies from 50-200, Saturation Current is the diode leakage current density in the absence of light. It is an important parameter which differentiates one diode from another, Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor & Thermal Voltage is the voltage produced within the p-n junction.
How to calculate Emitter Current using Common Emitter Current Gain?
The Emitter Current using Common Emitter Current Gain is the amplified output current of a bipolar junction transistor is calculated using Emitter Current = ((Common Emitter Current Gain+1)/Common Emitter Current Gain)*Saturation Current*e^(Base-Emitter Voltage/Thermal Voltage). To calculate Emitter Current using Common Emitter Current Gain, you need Common Emitter Current Gain (β), Saturation Current (Isat), Base-Emitter Voltage (VBE) & Thermal Voltage (Vt). With our tool, you need to enter the respective value for Common Emitter Current Gain, Saturation Current, Base-Emitter Voltage & Thermal Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Emitter Current?
In this formula, Emitter Current uses Common Emitter Current Gain, Saturation Current, Base-Emitter Voltage & Thermal Voltage. We can use 3 other way(s) to calculate the same, which is/are as follows -
• Emitter Current = ((Common Emitter Current Gain+1)/Common Emitter Current Gain)*Collector Current
• Emitter Current = (Saturation Current/Common-Base Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage)
• Emitter Current = Cross-section Area of Base-Emitter Junction*[Charge-e]*Electron Diffusivity*(-Thermal Equilibrium Concentration/Width of Base Junction)
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