Excess Avalanche Noise Factor Solution

STEP 0: Pre-Calculation Summary
Formula Used
Excess Avalanche Noise Factor = Multiplication Factor*(1+((1-Impact Ionization Coefficient)/Impact Ionization Coefficient)*((Multiplication Factor-1)/Multiplication Factor)^2)
F = M*(1+((1-k)/k)*((M-1)/M)^2)
This formula uses 3 Variables
Variables Used
Excess Avalanche Noise Factor - Excess Avalanche Noise Factor represents the additional noise introduced due to the avalanche multiplication process that occurs in these devices.
Multiplication Factor - Multiplication Factor is a measure of the internal gain provided by the Avalanche Photodiode.
Impact Ionization Coefficient - Impact Ionization Coefficient is a parameter that characterizes the probability of impact ionization events in avalanche photodiodes (APDs).
STEP 1: Convert Input(s) to Base Unit
Multiplication Factor: 2 --> No Conversion Required
Impact Ionization Coefficient: 0.11 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
F = M*(1+((1-k)/k)*((M-1)/M)^2) --> 2*(1+((1-0.11)/0.11)*((2-1)/2)^2)
Evaluating ... ...
F = 6.04545454545455
STEP 3: Convert Result to Output's Unit
6.04545454545455 --> No Conversion Required
FINAL ANSWER
6.04545454545455 6.045455 <-- Excess Avalanche Noise Factor
(Calculation completed in 00.004 seconds)

Credits

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Created by Santhosh Yadav
Dayananda Sagar College Of Engineering (DSCE), Banglore
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25 Optical Detectors Calculators

SNR of Good Avalanche Photodiode ADP Receiver in decibels
​ Go Signal to Noise Ratio = 10*log10((Multiplication Factor^2*Photocurrent^2)/(2*[Charge-e]*Post Detection Bandwidth*(Photocurrent+Dark Current)*Multiplication Factor^2.3+((4*[BoltZ]*Temperature*Post Detection Bandwidth*1.26)/Load Resistance)))
Photocurrent due to Incident Light
​ Go Photocurrent = (Incident Power*[Charge-e]*(1-Reflection Coefficient))/([hP]*Frequency Of Incident Light)*(1-exp(-Absorption Coefficient*Width of Absorption Region))
Probability of Detecting Photons
​ Go Probability of Finding a Photon = ((Variance of Probability Distribution Function^(Number of Incident Photons))*exp(-Variance of Probability Distribution Function))/(Number of Incident Photons!)
Excess Avalanche Noise Factor
​ Go Excess Avalanche Noise Factor = Multiplication Factor*(1+((1-Impact Ionization Coefficient)/Impact Ionization Coefficient)*((Multiplication Factor-1)/Multiplication Factor)^2)
Total Photodiode Current
​ Go Output Current = Dark Current*(exp(([Charge-e]*Photodiode Voltage)/(2*[BoltZ]*Temperature))-1)+Photocurrent
Optical Gain of Phototransistors
​ Go Optical Gain of Phototransistor = (([hP]*[c])/(Wavelength of Light*[Charge-e]))*(Collector Current of Phototransistor/Incident Power)
Average Number of Photons Detected
​ Go Average Number Of Photons Detected = (Quantum Efficiency*Average Received Optical Power*Time Period)/(Frequency Of Incident Light*[hP])
Single Pass Phase Shift through Fabry-Perot Amplifier
​ Go Single-Pass Phase Shift = (pi*(Frequency Of Incident Light-Fabry–Perot Resonant Frequency))/Free Spectral Range of Fabry-Pérot Interferometer
Total Root Mean Square Noise Current
​ Go Total Root Mean Square Noise Current = sqrt(Total Shot Noise^2+Dark Current Noise^2+Thermal Noise Current^2)
Average Received Optical Power
​ Go Average Received Optical Power = (20.7*[hP]*Frequency Of Incident Light)/(Time Period*Quantum Efficiency)
Total Power Accepted by Fiber
​ Go Total Power Accepted by Fiber = Incident Power*(1-(8*Axial Displacement)/(3*pi*Radius of Core))
Multiplied Photocurrent
​ Go Multiplied Photocurrent = Optical Gain of Phototransistor*Responsivity of Photodetector*Incident Power
Temperature Effect on Dark Current
​ Go Dark Current in raised temperature = Dark Current*2^((Changed Temperature-Previous Temperature)/10)
Incident Photon Rate
​ Go Incident Photon Rate = Incident Optical Power/([hP]*Frequency Of Light Wave)
Maximum Photodiode 3 dB Bandwidth
​ Go Maximum 3db Bandwidth = Carrier Velocity/(2*pi*Depletion Layer Width)
Maximum 3dB Bandwidth of Metal Photodetector
​ Go Maximum 3db Bandwidth = 1/(2*pi*Transit Time*PhotoConductive Gain)
Bandwidth Penalty
​ Go Post Detection Bandwidth = 1/(2*pi*Load Resistance*Capacitance)
Long Wavelength Cutoff Point
​ Go Wavelength Cutoff Point = [hP]*[c]/Bandgap Energy
Quantum Efficiency of Photodetector
​ Go Quantum Efficiency = Number of Electrons/Number of Incident Photons
Multiplication Factor
​ Go Multiplication Factor = Output Current/Initial Photocurrent
Electron Rate in Detector
​ Go Electron Rate = Quantum Efficiency*Incident Photon Rate
Transit Time with respect to Minority Carrier Diffusion
​ Go Diffusion Time = Distance^2/(2*Diffusion Coefficient)
Longest Transit Time
​ Go Transit Time = Depletion Layer Width/Drift Velocity
3 dB Bandwidth of Metal Photodetectors
​ Go Maximum 3db Bandwidth = 1/(2*pi*Transit Time)
Detectivity of Photodetector
​ Go Detectivity = 1/Noise Equivalent Power

Excess Avalanche Noise Factor Formula

Excess Avalanche Noise Factor = Multiplication Factor*(1+((1-Impact Ionization Coefficient)/Impact Ionization Coefficient)*((Multiplication Factor-1)/Multiplication Factor)^2)
F = M*(1+((1-k)/k)*((M-1)/M)^2)

Why is Excess Avalanche Noise Factor important?

The excess avalanche noise factor (F) is important because it quantifies the additional noise introduced during the amplification of photocurrent in avalanche photodiodes (APDs). It provides a crucial measure of the device's noise performance

How to Calculate Excess Avalanche Noise Factor?

Excess Avalanche Noise Factor calculator uses Excess Avalanche Noise Factor = Multiplication Factor*(1+((1-Impact Ionization Coefficient)/Impact Ionization Coefficient)*((Multiplication Factor-1)/Multiplication Factor)^2) to calculate the Excess Avalanche Noise Factor, Excess Avalanche Noise Factor is a parameter used to quantify the noise characteristics of avalanche photodiodes (APDs) or avalanche photodetectors. It represents the additional noise introduced due to the avalanche multiplication process that occurs in these devices. Excess Avalanche Noise Factor is denoted by F symbol.

How to calculate Excess Avalanche Noise Factor using this online calculator? To use this online calculator for Excess Avalanche Noise Factor, enter Multiplication Factor (M) & Impact Ionization Coefficient (k) and hit the calculate button. Here is how the Excess Avalanche Noise Factor calculation can be explained with given input values -> 6.045455 = 2*(1+((1-0.11)/0.11)*((2-1)/2)^2).

FAQ

What is Excess Avalanche Noise Factor?
Excess Avalanche Noise Factor is a parameter used to quantify the noise characteristics of avalanche photodiodes (APDs) or avalanche photodetectors. It represents the additional noise introduced due to the avalanche multiplication process that occurs in these devices and is represented as F = M*(1+((1-k)/k)*((M-1)/M)^2) or Excess Avalanche Noise Factor = Multiplication Factor*(1+((1-Impact Ionization Coefficient)/Impact Ionization Coefficient)*((Multiplication Factor-1)/Multiplication Factor)^2). Multiplication Factor is a measure of the internal gain provided by the Avalanche Photodiode & Impact Ionization Coefficient is a parameter that characterizes the probability of impact ionization events in avalanche photodiodes (APDs).
How to calculate Excess Avalanche Noise Factor?
Excess Avalanche Noise Factor is a parameter used to quantify the noise characteristics of avalanche photodiodes (APDs) or avalanche photodetectors. It represents the additional noise introduced due to the avalanche multiplication process that occurs in these devices is calculated using Excess Avalanche Noise Factor = Multiplication Factor*(1+((1-Impact Ionization Coefficient)/Impact Ionization Coefficient)*((Multiplication Factor-1)/Multiplication Factor)^2). To calculate Excess Avalanche Noise Factor, you need Multiplication Factor (M) & Impact Ionization Coefficient (k). With our tool, you need to enter the respective value for Multiplication Factor & Impact Ionization Coefficient and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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