Gate Length Solution

STEP 0: Pre-Calculation Summary
Formula Used
Gate Length = DC Transient Time*Saturation Drift Velocity
Lg = To*Vds
This formula uses 3 Variables
Variables Used
Gate Length - (Measured in Meter) - Gate Length is an important parameter as it determines the size of the gate region and hence affects the device's electrical characteristics.
DC Transient Time - (Measured in Second) - DC Transient Time refers to the time taken by an electron to travel from the cathode to the anode of an electron device and then back to the cathode.
Saturation Drift Velocity - (Measured in Meter per Second) - Saturation Drift Velocity refers to the maximum velocity that an electron or hole can attain in a given material when subjected to an electric field.
STEP 1: Convert Input(s) to Base Unit
DC Transient Time: 0.16 Second --> 0.16 Second No Conversion Required
Saturation Drift Velocity: 72 Meter per Second --> 72 Meter per Second No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Lg = To*Vds --> 0.16*72
Evaluating ... ...
Lg = 11.52
STEP 3: Convert Result to Output's Unit
11.52 Meter --> No Conversion Required
FINAL ANSWER
11.52 Meter <-- Gate Length
(Calculation completed in 00.004 seconds)

Credits

Created by Shobhit Dimri
Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
Shobhit Dimri has created this Calculator and 900+ more calculators!
Verified by Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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12 Helix Tube Calculators

Round Trip DC Transit Time
Go DC Transient Time = (2*[Mass-e]*Drift Space Length*Electron Uniform Velocity)/([Charge-e]*(Repeller Voltage+Beam Voltage))
DC Voltage
Go DC Voltage = (0.5*[Mass-e]*Electron Uniform Velocity^2)/[Charge-e]
Reflection Coefficient
Go Reflection Coefficient = (Voltage Standing Wave Ratio-1)/(Voltage Standing Wave Ratio+1)
Insertion Loss
Go Insertion Loss = 20*log10(Voltage/Input Signal Amplitude)
Pitch Angle
Go Pitch Angle = arsin(Phase Velocity/[c])
Phase Velocity
Go Phase Velocity = [c]*sin(Pitch Angle)
Voltage Standing Wave Ratio
Go Voltage Standing Wave Ratio = Maximum Voltage/Minimum Voltage
Ratio of Voltage Wave
Go Voltage Standing Wave Ratio = sqrt(Power Standing Wave Ratio)
Saturation Drift Voltage
Go Saturation Drift Velocity = Gate Length/DC Transient Time
Gate Length
Go Gate Length = DC Transient Time*Saturation Drift Velocity
Mismatched Loss
Go Mismatched Loss = -10*log10(1-Reflection Coefficient^2)
Power Standing Wave Ratio
Go Power Standing Wave Ratio = Voltage Standing Wave Ratio^2

Gate Length Formula

Gate Length = DC Transient Time*Saturation Drift Velocity
Lg = To*Vds

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How to Calculate Gate Length?

Gate Length calculator uses Gate Length = DC Transient Time*Saturation Drift Velocity to calculate the Gate Length, Gate Length is the length of the gate electrode in a field-effect transistor (FET) or other similar devices. The gate is a crucial part of a FET as it is used to control the flow of current between the source and drain electrodes. The gate length is an important parameter as it determines the size of the gate region and hence affects the device's electrical characteristics. Gate Length is denoted by Lg symbol.

How to calculate Gate Length using this online calculator? To use this online calculator for Gate Length, enter DC Transient Time (To) & Saturation Drift Velocity (Vds) and hit the calculate button. Here is how the Gate Length calculation can be explained with given input values -> 11.52 = 0.16*72.

FAQ

What is Gate Length?
Gate Length is the length of the gate electrode in a field-effect transistor (FET) or other similar devices. The gate is a crucial part of a FET as it is used to control the flow of current between the source and drain electrodes. The gate length is an important parameter as it determines the size of the gate region and hence affects the device's electrical characteristics and is represented as Lg = To*Vds or Gate Length = DC Transient Time*Saturation Drift Velocity. DC Transient Time refers to the time taken by an electron to travel from the cathode to the anode of an electron device and then back to the cathode & Saturation Drift Velocity refers to the maximum velocity that an electron or hole can attain in a given material when subjected to an electric field.
How to calculate Gate Length?
Gate Length is the length of the gate electrode in a field-effect transistor (FET) or other similar devices. The gate is a crucial part of a FET as it is used to control the flow of current between the source and drain electrodes. The gate length is an important parameter as it determines the size of the gate region and hence affects the device's electrical characteristics is calculated using Gate Length = DC Transient Time*Saturation Drift Velocity. To calculate Gate Length, you need DC Transient Time (To) & Saturation Drift Velocity (Vds). With our tool, you need to enter the respective value for DC Transient Time & Saturation Drift Velocity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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