Gate Length of MESFET Calculator

✖Saturated Drift Velocity is the maximum velocity that can travel in a charge carrier of a semiconductor.ⓘ Saturated Drift Velocity [V_s]			+10% -10%
✖Cut-off Frequency is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.ⓘ Cut-off Frequency [f_co]			+10% -10%

✖Gate Length is defined the distance between the source and the drain electrodes along the direction perpendicular to the plane of the semiconductor material, and parallel to the gate electrode.ⓘ Gate Length of MESFET [L_gate]

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Gate Length of MESFET

Formula

`"L"_{"gate"} = "V"_{"s"}/(4*pi*"f"_{"co"})`

Example

`"13.24084μm"="5mm/s"/(4*pi*"30.05Hz")`

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Gate Length of MESFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency)
L_gate = V_s/(4*pi*f_co)
This formula uses 1 Constants, 3 Variables

Constants Used

pi - Archimedes' constant Value Taken As 3.14159265358979323846264338327950288

Variables Used

Gate Length - (Measured in Meter) - Gate Length is defined the distance between the source and the drain electrodes along the direction perpendicular to the plane of the semiconductor material, and parallel to the gate electrode.
Saturated Drift Velocity - (Measured in Meter per Second) - Saturated Drift Velocity is the maximum velocity that can travel in a charge carrier of a semiconductor.
Cut-off Frequency - (Measured in Hertz) - Cut-off Frequency is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.

STEP 1: Convert Input(s) to Base Unit

Saturated Drift Velocity: 5 Millimeter per Second --> 0.005 Meter per Second (Check conversion here)
Cut-off Frequency: 30.05 Hertz --> 30.05 Hertz No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

L_gate = V_s/(4*pi*f_co) --> 0.005/(4*pi*30.05)

Evaluating ... ...

L_gate = 1.32408438512392E-05

STEP 3: Convert Result to Output's Unit

1.32408438512392E-05 Meter -->13.2408438512392 Micrometer (Check conversion here)

FINAL ANSWER

13.2408438512392 ≈ 13.24084 Micrometer <-- Gate Length

(Calculation completed in 00.006 seconds)

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< 13 MESFET Characteristics Calculators

Cut-off Frequency using Maximum Frequency

Go Cut-off Frequency = (2*Maximum Frequency of Oscillations)/(sqrt(Drain Resistance/(Source Resistance+Gate Metallization Resistance+Input Resistance)))

Gate Metallization Resistance

Go Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance)

Source Resistance

Go Source Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Gate Metallization Resistance+Input Resistance)

Input Resistance

Go Input Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Gate Metallization Resistance+Source Resistance)

Drain Resistance of MESFET

Go Drain Resistance = ((4*Maximum Frequency of Oscillations^2)/Cut-off Frequency^2)*(Source Resistance+Gate Metallization Resistance+Input Resistance)

Transconductance in Saturation Region

Go Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage))

Maximum Frequency of Oscillations in MESFET

Go Maximum Frequency of Oscillations = (Unity Gain Frequency/2)*sqrt(Drain Resistance/Gate Metallization Resistance)

Maximum Frequency of Oscillation given Transconductance

Go Maximum Frequency of Oscillations = Transconductance/(pi*Gate Source Capacitance)

Cut-off Frequency given Transconductance and Capacitance

Go Cut-off Frequency = Transconductance/(2*pi*Gate Source Capacitance)

Gate Source Capacitance

Go Gate Source Capacitance = Transconductance/(2*pi*Cut-off Frequency)

Transconductance in MESFET

Go Transconductance = 2*Gate Source Capacitance*pi*Cut-off Frequency

Gate Length of MESFET

Go Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency)

Cut-off Frequency

Go Cut-off Frequency = Saturated Drift Velocity/(4*pi*Gate Length)

Gate Length of MESFET Formula

Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency)
L_gate = V_s/(4*pi*f_co)

What are the applications of MESFET?

MESFETs offer advantages such as high gain, high speed, low noise, and low power consumption, making them suitable for various applications in electronics, telecommunications, and biomedical fields.

How to Calculate Gate Length of MESFET?

Gate Length of MESFET calculator uses Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency) to calculate the Gate Length, The Gate Length of MESFET formula is defined as the distance between the source and the drain electrodes along the direction perpendicular to the plane of the semiconductor material, and parallel to the gate electrode. Gate Length is denoted by L_gate symbol.

How to calculate Gate Length of MESFET using this online calculator? To use this online calculator for Gate Length of MESFET, enter Saturated Drift Velocity (V_s) & Cut-off Frequency (f_co) and hit the calculate button. Here is how the Gate Length of MESFET calculation can be explained with given input values -> 1.3E+7 = 0.005/(4*pi*30.05).

FAQ

What is Gate Length of MESFET?

The Gate Length of MESFET formula is defined as the distance between the source and the drain electrodes along the direction perpendicular to the plane of the semiconductor material, and parallel to the gate electrode and is represented as L_gate = V_s/(4*pi*f_co) or Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency). Saturated Drift Velocity is the maximum velocity that can travel in a charge carrier of a semiconductor & Cut-off Frequency is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.

How to calculate Gate Length of MESFET?

The Gate Length of MESFET formula is defined as the distance between the source and the drain electrodes along the direction perpendicular to the plane of the semiconductor material, and parallel to the gate electrode is calculated using Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency). To calculate Gate Length of MESFET, you need Saturated Drift Velocity (V_s) & Cut-off Frequency (f_co). With our tool, you need to enter the respective value for Saturated Drift Velocity & Cut-off Frequency and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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