Gate Source Capacitance Calculator

✖Transconductance is defined as the ratio of the change in drain current to the change in gate-source voltage, assuming a constant drain-source voltage.ⓘ Transconductance [g_m]			+10% -10%
✖Cut-off Frequency is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.ⓘ Cut-off Frequency [f_co]			+10% -10%

✖Gate Source Capacitance is a parasitic capacitance that exists between the gate and source terminals of a MESFET or other types of transistors.ⓘ Gate Source Capacitance [C_gs]

⎘ Copy

👎

Formula

✖

Gate Source Capacitance

Formula

`"C"_{"gs"} = "g"_{"m"}/(2*pi*"f"_{"co"})`

Example

`"264.8169μF"="0.05S"/(2*pi*"30.05Hz")`

Calculator

LaTeX

Reset

👍

Download MESFET Characteristics Formulas PDF

Gate Source Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Source Capacitance = Transconductance/(2*pi*Cut-off Frequency)
C_gs = g_m/(2*pi*f_co)
This formula uses 1 Constants, 3 Variables

Constants Used

pi - Archimedes' constant Value Taken As 3.14159265358979323846264338327950288

Variables Used

Gate Source Capacitance - (Measured in Farad) - Gate Source Capacitance is a parasitic capacitance that exists between the gate and source terminals of a MESFET or other types of transistors.
Transconductance - (Measured in Siemens) - Transconductance is defined as the ratio of the change in drain current to the change in gate-source voltage, assuming a constant drain-source voltage.
Cut-off Frequency - (Measured in Hertz) - Cut-off Frequency is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.

STEP 1: Convert Input(s) to Base Unit

Transconductance: 0.05 Siemens --> 0.05 Siemens No Conversion Required
Cut-off Frequency: 30.05 Hertz --> 30.05 Hertz No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_gs = g_m/(2*pi*f_co) --> 0.05/(2*pi*30.05)

Evaluating ... ...

C_gs = 0.000264816877024784

STEP 3: Convert Result to Output's Unit

0.000264816877024784 Farad -->264.816877024784 Microfarad (Check conversion here)

FINAL ANSWER

264.816877024784 ≈ 264.8169 Microfarad <-- Gate Source Capacitance

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » Microwave Theory » Microwave Semiconductor Devices » MESFET Characteristics » Gate Source Capacitance

Credits

Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 1900+ more calculators!

< 13 MESFET Characteristics Calculators

Cut-off Frequency using Maximum Frequency

Go Cut-off Frequency = (2*Maximum Frequency of Oscillations)/(sqrt(Drain Resistance/(Source Resistance+Gate Metallization Resistance+Input Resistance)))

Gate Metallization Resistance

Go Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance)

Source Resistance

Go Source Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Gate Metallization Resistance+Input Resistance)

Input Resistance

Go Input Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Gate Metallization Resistance+Source Resistance)

Drain Resistance of MESFET

Go Drain Resistance = ((4*Maximum Frequency of Oscillations^2)/Cut-off Frequency^2)*(Source Resistance+Gate Metallization Resistance+Input Resistance)

Transconductance in Saturation Region

Go Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage))

Maximum Frequency of Oscillations in MESFET

Go Maximum Frequency of Oscillations = (Unity Gain Frequency/2)*sqrt(Drain Resistance/Gate Metallization Resistance)

Maximum Frequency of Oscillation given Transconductance

Go Maximum Frequency of Oscillations = Transconductance/(pi*Gate Source Capacitance)

Cut-off Frequency given Transconductance and Capacitance

Go Cut-off Frequency = Transconductance/(2*pi*Gate Source Capacitance)

Gate Source Capacitance

Go Gate Source Capacitance = Transconductance/(2*pi*Cut-off Frequency)

Transconductance in MESFET

Go Transconductance = 2*Gate Source Capacitance*pi*Cut-off Frequency

Cut-off Frequency

Go Cut-off Frequency = Saturated Drift Velocity/(4*pi*Gate Length)

Gate Length of MESFET

Go Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency)

Gate Source Capacitance Formula

Gate Source Capacitance = Transconductance/(2*pi*Cut-off Frequency)
C_gs = g_m/(2*pi*f_co)

What are the applications of MESFET?

MESFETs offer advantages such as high gain, high speed, low noise, and low power consumption, making them suitable for various applications in electronics, telecommunications, and biomedical fields.

How to Calculate Gate Source Capacitance?

Gate Source Capacitance calculator uses Gate Source Capacitance = Transconductance/(2*pi*Cut-off Frequency) to calculate the Gate Source Capacitance, The Gate Source Capacitance formula is defined as a parasitic capacitance that exists between the gate and source terminals of a MESFET or other types of transistors. It represents the amount of charge that can be stored in the gate-source region of the device per unit voltage applied between the terminals. Gate Source Capacitance is denoted by C_gs symbol.

How to calculate Gate Source Capacitance using this online calculator? To use this online calculator for Gate Source Capacitance, enter Transconductance (g_m) & Cut-off Frequency (f_co) and hit the calculate button. Here is how the Gate Source Capacitance calculation can be explained with given input values -> 2.6E+8 = 0.05/(2*pi*30.05).

FAQ

What is Gate Source Capacitance?

The Gate Source Capacitance formula is defined as a parasitic capacitance that exists between the gate and source terminals of a MESFET or other types of transistors. It represents the amount of charge that can be stored in the gate-source region of the device per unit voltage applied between the terminals and is represented as C_gs = g_m/(2*pi*f_co) or Gate Source Capacitance = Transconductance/(2*pi*Cut-off Frequency). Transconductance is defined as the ratio of the change in drain current to the change in gate-source voltage, assuming a constant drain-source voltage & Cut-off Frequency is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.

How to calculate Gate Source Capacitance?

The Gate Source Capacitance formula is defined as a parasitic capacitance that exists between the gate and source terminals of a MESFET or other types of transistors. It represents the amount of charge that can be stored in the gate-source region of the device per unit voltage applied between the terminals is calculated using Gate Source Capacitance = Transconductance/(2*pi*Cut-off Frequency). To calculate Gate Source Capacitance, you need Transconductance (g_m) & Cut-off Frequency (f_co). With our tool, you need to enter the respective value for Transconductance & Cut-off Frequency and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search