Gate to Drain Capacitance Calculator

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Analog VLSI Design

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✖Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.ⓘ Gate Capacitance [C_g]			+10% -10%
✖Gate to Base Capacitance is defined as the capacitance that is observed between the gate and Base of the Junction of MOSFET.ⓘ Gate to Base Capacitance [C_gb]			+10% -10%
✖Gate to source Capacitance is defined as the capacitance that is observed between the gate and source of the Junction of MOSFET.ⓘ Gate to Source Capacitance [C_gs]			+10% -10%

✖Gate to Drain Capacitance is defined as the capacitance that is observed between the gate and drain of the Junction of MOSFET.ⓘ Gate to Drain Capacitance [C_gd]

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Formula

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Gate to Drain Capacitance

Formula

`"C"_{"gd"} = "C"_{"g"}-("C"_{"gb"}+"C"_{"gs"})`

Example

`"10μF"="59.61μF"-("35μF"+"14.61μF")`

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Gate to Drain Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate to Drain Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Source Capacitance)
C_gd = C_g-(C_gb+C_gs)
This formula uses 4 Variables

Variables Used

Gate to Drain Capacitance - (Measured in Farad) - Gate to Drain Capacitance is defined as the capacitance that is observed between the gate and drain of the Junction of MOSFET.
Gate Capacitance - (Measured in Farad) - Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.
Gate to Base Capacitance - (Measured in Farad) - Gate to Base Capacitance is defined as the capacitance that is observed between the gate and Base of the Junction of MOSFET.
Gate to Source Capacitance - (Measured in Farad) - Gate to source Capacitance is defined as the capacitance that is observed between the gate and source of the Junction of MOSFET.

STEP 1: Convert Input(s) to Base Unit

Gate Capacitance: 59.61 Microfarad --> 5.961E-05 Farad (Check conversion here)
Gate to Base Capacitance: 35 Microfarad --> 3.5E-05 Farad (Check conversion here)
Gate to Source Capacitance: 14.61 Microfarad --> 1.461E-05 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_gd = C_g-(C_gb+C_gs) --> 5.961E-05-(3.5E-05+1.461E-05)

Evaluating ... ...

C_gd = 1E-05

STEP 3: Convert Result to Output's Unit

1E-05 Farad -->10 Microfarad (Check conversion here)

FINAL ANSWER

10 Microfarad <-- Gate to Drain Capacitance

(Calculation completed in 00.004 seconds)

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< 16 Analog VLSI Design Calculators

Potential between Source to Body

Go Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration))

Gate to Source Capacitance

Go Gate to Source Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Drain Capacitance)

Gate to Drain Capacitance

Go Gate to Drain Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Source Capacitance)

Gate to Base Capacitance

Go Gate to Base Capacitance = Gate Capacitance-(Gate to Source Capacitance+Gate to Drain Capacitance)

Drain Voltage

Go Base Collector Voltage = sqrt(Dynamic Power/(Frequency*Capacitance))

Potential from Drain to Source

Go Drain to Source Potential = (Threshold Voltage DIBL-Threshold Voltage)/DIBL Coefficient

Gate to Channel Voltage

Go Gate to Channel Voltage = (Channel Charge/Gate Capacitance)+Threshold Voltage

Gate to Collector Potential

Go Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2

Gate to Source Potential

Go Gate to Source Potential = 2*Gate to Channel Voltage-Gate to Drain Potential

Gate to Drain Potential

Go Gate to Drain Potential = 2*Gate to Channel Voltage-Gate to Source Potential

Minimum High Output Voltage

Go Minimum High Output Voltage = High Noise Margin+Minimum High Input Voltage

Minimum High Input Voltage

Go Minimum High Input Voltage = Minimum High Output Voltage-High Noise Margin

High Noise Margin

Go High Noise Margin = Minimum High Output Voltage-Minimum High Input Voltage

Maximum Low Output Voltage

Go Maximum Low Output Voltage = Maximum Low Input Voltage-Low Noise Margin

Maximum Low Input Voltage

Go Maximum Low Input Voltage = Low Noise Margin+Maximum Low Output Voltage

Low Noise Margin

Go Low Noise Margin = Maximum Low Input Voltage-Maximum Low Output Voltage

Gate to Drain Capacitance Formula

Gate to Drain Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Source Capacitance)
C_gd = C_g-(C_gb+C_gs)

What is Parasitic Capacitance?

Parasitic capacitance, or stray capacitance is an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other.

How to Calculate Gate to Drain Capacitance?

Gate to Drain Capacitance calculator uses Gate to Drain Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Source Capacitance) to calculate the Gate to Drain Capacitance, The Gate to Drain Capacitance formula is defined as the capacitance that is observed between the gate and drain of the Junction of MOSFET. Gate to Drain Capacitance is denoted by C_gd symbol.

How to calculate Gate to Drain Capacitance using this online calculator? To use this online calculator for Gate to Drain Capacitance, enter Gate Capacitance (C_g), Gate to Base Capacitance (C_gb) & Gate to Source Capacitance (C_gs) and hit the calculate button. Here is how the Gate to Drain Capacitance calculation can be explained with given input values -> 9.6E+6 = 5.961E-05-(3.5E-05+1.461E-05).

FAQ

What is Gate to Drain Capacitance?

The Gate to Drain Capacitance formula is defined as the capacitance that is observed between the gate and drain of the Junction of MOSFET and is represented as C_gd = C_g-(C_gb+C_gs) or Gate to Drain Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Source Capacitance). Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor, Gate to Base Capacitance is defined as the capacitance that is observed between the gate and Base of the Junction of MOSFET & Gate to source Capacitance is defined as the capacitance that is observed between the gate and source of the Junction of MOSFET.

How to calculate Gate to Drain Capacitance?

The Gate to Drain Capacitance formula is defined as the capacitance that is observed between the gate and drain of the Junction of MOSFET is calculated using Gate to Drain Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Source Capacitance). To calculate Gate to Drain Capacitance, you need Gate Capacitance (C_g), Gate to Base Capacitance (C_gb) & Gate to Source Capacitance (C_gs). With our tool, you need to enter the respective value for Gate Capacitance, Gate to Base Capacitance & Gate to Source Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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