Concentration in Conduction Band Calculator

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✖Effective Density of State in Conduction Band is defined as the number of equivalent energy minima in the conduction band.ⓘ Effective Density of State in Conduction Band [N_c]			+10% -10%
✖Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.ⓘ Fermi Function [f_E]			+10% -10%

✖Electron Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material.ⓘ Concentration in Conduction Band [n₀]

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Concentration in Conduction Band

Formula

`"n"_{"0"} = "N"_{"c"}*"f"_{"E"}`

Example

`"1.4E^7/m³"="6.4e8/m³"*"0.022"`

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Concentration in Conduction Band Solution

STEP 0: Pre-Calculation Summary

Formula Used

Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function
n₀ = N_c*f_E
This formula uses 3 Variables

Variables Used

Electron Concentration in Conduction Band - (Measured in 1 per Cubic Meter) - Electron Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material.
Effective Density of State in Conduction Band - (Measured in 1 per Cubic Meter) - Effective Density of State in Conduction Band is defined as the number of equivalent energy minima in the conduction band.
Fermi Function - Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.

STEP 1: Convert Input(s) to Base Unit

Effective Density of State in Conduction Band: 640000000 1 per Cubic Meter --> 640000000 1 per Cubic Meter No Conversion Required
Fermi Function: 0.022 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

n₀ = N_c*f_E --> 640000000*0.022

Evaluating ... ...

n₀ = 14080000

STEP 3: Convert Result to Output's Unit

14080000 1 per Cubic Meter --> No Conversion Required

FINAL ANSWER

14080000 ≈ 1.4E+7 1 per Cubic Meter <-- Electron Concentration in Conduction Band

(Calculation completed in 00.004 seconds)

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< 20 Energy Band & Charge Carrier Calculators

Intrinsic Carrier Concentration

Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band)*exp(-Energy Gap/(2*[BoltZ]*Temperature))

Carrier Lifetime

Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))

Energy of Electron given Coulomb's Constant

Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)

Steady State Electron Concentration

Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration

Concentration in Conduction Band

Go Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function

Effective Density of State

Go Effective Density of State in Conduction Band = Electron Concentration in Conduction Band/Fermi Function

Fermi Function

Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band

Effective Density State in Valence Band

Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)

Concentration of Holes in Valence Band

Go Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)

Recombination Lifetime

Go Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1

Distribution Coefficient

Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid

Liquid Concentration

Go Impurity Concentration in Liquid = Impurity Concentration in Solid/Distribution Coefficient

Net Rate of Change in Conduction Band

Go Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)

Thermal Generation Rate

Go Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration^2)

Excess Carrier Concentration

Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime

Optical Generation Rate

Go Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime

Photoelectron Energy

Go Photoelectron Energy = [hP]*Frequency of Incident Light

Conduction Band Energy

Go Conduction Band Energy = Energy Gap+Valence Band Energy

Valence Band Energy

Go Valence Band Energy = Conduction Band Energy-Energy Gap

Energy Gap

Go Energy Gap = Conduction Band Energy-Valence Band Energy

Concentration in Conduction Band Formula

Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function
n₀ = N_c*f_E

Is the electron concentration equal to the hole concentration in this intrinsic silicon?

In an intrinsic semiconductor, the number of electrons generated in the conduction band is equal to the number of holes generated in the valence band. Hence the electron-carrier concentration is equal to the hole-carrier concentration.

How to Calculate Concentration in Conduction Band?

Concentration in Conduction Band calculator uses Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function to calculate the Electron Concentration in Conduction Band, Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material. In semiconductors, the conduction band is the energy band above the valence band, and electrons in this band are not tightly bound to atoms and can move freely. Electron Concentration in Conduction Band is denoted by n₀ symbol.

How to calculate Concentration in Conduction Band using this online calculator? To use this online calculator for Concentration in Conduction Band, enter Effective Density of State in Conduction Band (N_c) & Fermi Function (f_E) and hit the calculate button. Here is how the Concentration in Conduction Band calculation can be explained with given input values -> 1.4E+7 = 640000000*0.022.

FAQ

What is Concentration in Conduction Band?

Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material. In semiconductors, the conduction band is the energy band above the valence band, and electrons in this band are not tightly bound to atoms and can move freely and is represented as n₀ = N_c*f_E or Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function. Effective Density of State in Conduction Band is defined as the number of equivalent energy minima in the conduction band & Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.

How to calculate Concentration in Conduction Band?

Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material. In semiconductors, the conduction band is the energy band above the valence band, and electrons in this band are not tightly bound to atoms and can move freely is calculated using Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function. To calculate Concentration in Conduction Band, you need Effective Density of State in Conduction Band (N_c) & Fermi Function (f_E). With our tool, you need to enter the respective value for Effective Density of State in Conduction Band & Fermi Function and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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