Longest Transit Time Solution

STEP 0: Pre-Calculation Summary
Formula Used
Transit Time = Depletion Layer Width/Drift Velocity
ts = w/Vd
This formula uses 3 Variables
Variables Used
Transit Time - (Measured in Second) - Transit time is the duration for a charge carrier to move from where it's created in the photodetector's semiconductor material to where it's collected by the electrodes.
Depletion Layer Width - (Measured in Meter) - The depletion Layer Width is the distance across the region near the p-n junction where mobile charge carriers (electrons and holes) have been significantly depleted or removed.
Drift Velocity - (Measured in Meter per Second) - Drift Velocity is the average velocity attained by charged particles, such as electrons or holes, in a particular direction under the influence of an electric field.
STEP 1: Convert Input(s) to Base Unit
Depletion Layer Width: 9 Meter --> 9 Meter No Conversion Required
Drift Velocity: 0.75 Meter per Second --> 0.75 Meter per Second No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
ts = w/Vd --> 9/0.75
Evaluating ... ...
ts = 12
STEP 3: Convert Result to Output's Unit
12 Second --> No Conversion Required
FINAL ANSWER
12 Second <-- Transit Time
(Calculation completed in 00.004 seconds)

Credits

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Created by Gowthaman N
Vellore Institute of Technology (VIT University), Chennai
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Verified by Parminder Singh
Chandigarh University (CU), Punjab
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25 Optical Detectors Calculators

SNR of Good Avalanche Photodiode ADP Receiver in decibels
​ Go Signal to Noise Ratio = 10*log10((Multiplication Factor^2*Photocurrent^2)/(2*[Charge-e]*Post Detection Bandwidth*(Photocurrent+Dark Current)*Multiplication Factor^2.3+((4*[BoltZ]*Temperature*Post Detection Bandwidth*1.26)/Load Resistance)))
Photocurrent due to Incident Light
​ Go Photocurrent = (Incident Power*[Charge-e]*(1-Reflection Coefficient))/([hP]*Frequency Of Incident Light)*(1-exp(-Absorption Coefficient*Width of Absorption Region))
Probability of Detecting Photons
​ Go Probability of Finding a Photon = ((Variance of Probability Distribution Function^(Number of Incident Photons))*exp(-Variance of Probability Distribution Function))/(Number of Incident Photons!)
Excess Avalanche Noise Factor
​ Go Excess Avalanche Noise Factor = Multiplication Factor*(1+((1-Impact Ionization Coefficient)/Impact Ionization Coefficient)*((Multiplication Factor-1)/Multiplication Factor)^2)
Total Photodiode Current
​ Go Output Current = Dark Current*(exp(([Charge-e]*Photodiode Voltage)/(2*[BoltZ]*Temperature))-1)+Photocurrent
Optical Gain of Phototransistors
​ Go Optical Gain of Phototransistor = (([hP]*[c])/(Wavelength of Light*[Charge-e]))*(Collector Current of Phototransistor/Incident Power)
Average Number of Photons Detected
​ Go Average Number Of Photons Detected = (Quantum Efficiency*Average Received Optical Power*Time Period)/(Frequency Of Incident Light*[hP])
Single Pass Phase Shift through Fabry-Perot Amplifier
​ Go Single-Pass Phase Shift = (pi*(Frequency Of Incident Light-Fabry–Perot Resonant Frequency))/Free Spectral Range of Fabry-Pérot Interferometer
Total Root Mean Square Noise Current
​ Go Total Root Mean Square Noise Current = sqrt(Total Shot Noise^2+Dark Current Noise^2+Thermal Noise Current^2)
Average Received Optical Power
​ Go Average Received Optical Power = (20.7*[hP]*Frequency Of Incident Light)/(Time Period*Quantum Efficiency)
Total Power Accepted by Fiber
​ Go Total Power Accepted by Fiber = Incident Power*(1-(8*Axial Displacement)/(3*pi*Radius of Core))
Multiplied Photocurrent
​ Go Multiplied Photocurrent = Optical Gain of Phototransistor*Responsivity of Photodetector*Incident Power
Temperature Effect on Dark Current
​ Go Dark Current in raised temperature = Dark Current*2^((Changed Temperature-Previous Temperature)/10)
Incident Photon Rate
​ Go Incident Photon Rate = Incident Optical Power/([hP]*Frequency Of Light Wave)
Maximum Photodiode 3 dB Bandwidth
​ Go Maximum 3db Bandwidth = Carrier Velocity/(2*pi*Depletion Layer Width)
Maximum 3dB Bandwidth of Metal Photodetector
​ Go Maximum 3db Bandwidth = 1/(2*pi*Transit Time*PhotoConductive Gain)
Bandwidth Penalty
​ Go Post Detection Bandwidth = 1/(2*pi*Load Resistance*Capacitance)
Long Wavelength Cutoff Point
​ Go Wavelength Cutoff Point = [hP]*[c]/Bandgap Energy
Quantum Efficiency of Photodetector
​ Go Quantum Efficiency = Number of Electrons/Number of Incident Photons
Multiplication Factor
​ Go Multiplication Factor = Output Current/Initial Photocurrent
Electron Rate in Detector
​ Go Electron Rate = Quantum Efficiency*Incident Photon Rate
Transit Time with respect to Minority Carrier Diffusion
​ Go Diffusion Time = Distance^2/(2*Diffusion Coefficient)
Longest Transit Time
​ Go Transit Time = Depletion Layer Width/Drift Velocity
3 dB Bandwidth of Metal Photodetectors
​ Go Maximum 3db Bandwidth = 1/(2*pi*Transit Time)
Detectivity of Photodetector
​ Go Detectivity = 1/Noise Equivalent Power

Longest Transit Time Formula

Transit Time = Depletion Layer Width/Drift Velocity
ts = w/Vd

How does reduced drift velocity affect transit time in semiconductor devices?

A decrease in drift velocity increases the transit time, as carriers move more slowly through the semiconductor material. This results in signal propagation delays and may affect the overall speed and efficiency of electronic devices, highlighting the importance of optimizing drift velocity for desired performance.

How to Calculate Longest Transit Time?

Longest Transit Time calculator uses Transit Time = Depletion Layer Width/Drift Velocity to calculate the Transit Time, The Longest Transit Time formula is used in semiconductor physics to calculate the transit time of charged particles (such as electrons or holes) as they move through the depletion layer of a semiconductor device. Transit Time is denoted by ts symbol.

How to calculate Longest Transit Time using this online calculator? To use this online calculator for Longest Transit Time, enter Depletion Layer Width (w) & Drift Velocity (Vd) and hit the calculate button. Here is how the Longest Transit Time calculation can be explained with given input values -> 12 = 9/0.75.

FAQ

What is Longest Transit Time?
The Longest Transit Time formula is used in semiconductor physics to calculate the transit time of charged particles (such as electrons or holes) as they move through the depletion layer of a semiconductor device and is represented as ts = w/Vd or Transit Time = Depletion Layer Width/Drift Velocity. The depletion Layer Width is the distance across the region near the p-n junction where mobile charge carriers (electrons and holes) have been significantly depleted or removed & Drift Velocity is the average velocity attained by charged particles, such as electrons or holes, in a particular direction under the influence of an electric field.
How to calculate Longest Transit Time?
The Longest Transit Time formula is used in semiconductor physics to calculate the transit time of charged particles (such as electrons or holes) as they move through the depletion layer of a semiconductor device is calculated using Transit Time = Depletion Layer Width/Drift Velocity. To calculate Longest Transit Time, you need Depletion Layer Width (w) & Drift Velocity (Vd). With our tool, you need to enter the respective value for Depletion Layer Width & Drift Velocity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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