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Majority carrier concentration in a Semiconductor Solution

STEP 0: Pre-Calculation Summary
Formula Used
majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration
n0 = (ni)^2/M
This formula uses 2 Variables
Variables Used
Intrinsic carrier concentration - Intrinsic carrier concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material. (Measured in 1 per Cubic Centimeter)
Minority carrier concentration- Minority carrier concentration are produced by thermal excitation.
STEP 1: Convert Input(s) to Base Unit
Intrinsic carrier concentration: 100 1 per Cubic Centimeter --> 100000000 1 per Cubic Meter (Check conversion here)
Minority carrier concentration: 4 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
n0 = (ni)^2/M --> (100000000)^2/4
Evaluating ... ...
n0 = 2.5E+15
STEP 3: Convert Result to Output's Unit
2.5E+15 1 per Cubic Meter -->2500000000 1 per Cubic Centimeter (Check conversion here)
FINAL ANSWER
2500000000 1 per Cubic Centimeter <-- Majority carrier electron concentration
(Calculation completed in 00.016 seconds)

10+ Basic Electronics Calculators

Conductivity in semiconductors in terms of mobility of electrons and holes
conductivity = Concentration of electrons in the conduction band*[Charge-e]*Mobility of holes+Majority carrier electron concentration*[Charge-e]*Mobility of electron Go
Intrinsic concentration
intrinsic_carrier_concentration = sqrt(Coefficient related to specific semiconductor*(Temperature)^3*e^-(Semiconductor bandgap energy/(2*[BoltZ]*Temperature))) Go
Conductivity of extrinsic semiconductor for p-type
conductivity_of_extrinsic_semiconductors_n_type = Acceptor concentration*[Charge-e]*Mobility of electron Go
Conductivity of extrinsic semiconductors for n-type
conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes Go
Majority carrier concentration in a Semiconductor
majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration Go
Electron diffusion length in terms of relaxation time
electron_diffusion_length = sqrt(Electron Diffusion Constant*Relaxation time) Go
Conductivity in metals in terms of number of electrons
conductivity = Number of Electrons*Mobility of electron*[Charge-e] Go
Einstein's Equation
voltage_equivalent_of_temperature = Electron Diffusion Constant/Mobility of electron Go
Mobility of a charge carriers
mobility_of_charge_carriers = Drift Velocity/Electric field intensity Go
Thermal Voltage or voltage equivalent of temperature
thermal_voltage = Temperature/11600 Go

Majority carrier concentration in a Semiconductor Formula

majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration
n0 = (ni)^2/M

what is a mass action law?

In a semiconductor under thermal equilibrium ( at constant temperature ) the product of holes and electrons is always constant and equal to the square of the intrinsic semiconductor.

How to Calculate Majority carrier concentration in a Semiconductor?

Majority carrier concentration in a Semiconductor calculator uses majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration to calculate the Majority carrier electron concentration, Majority carrier concentration in a semiconductor is defined as the equilibrium carrier concentration is equal to the intrinsic carrier concentration plus the number of free carriers added by doping the semiconductor. Majority carrier electron concentration and is denoted by n0 symbol.

How to calculate Majority carrier concentration in a Semiconductor using this online calculator? To use this online calculator for Majority carrier concentration in a Semiconductor, enter Intrinsic carrier concentration (ni) and Minority carrier concentration (M) and hit the calculate button. Here is how the Majority carrier concentration in a Semiconductor calculation can be explained with given input values -> 2.500E+9 = (100000000)^2/4.

FAQ

What is Majority carrier concentration in a Semiconductor?
Majority carrier concentration in a semiconductor is defined as the equilibrium carrier concentration is equal to the intrinsic carrier concentration plus the number of free carriers added by doping the semiconductor and is represented as n0 = (ni)^2/M or majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration. Intrinsic carrier concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material and Minority carrier concentration are produced by thermal excitation.
How to calculate Majority carrier concentration in a Semiconductor?
Majority carrier concentration in a semiconductor is defined as the equilibrium carrier concentration is equal to the intrinsic carrier concentration plus the number of free carriers added by doping the semiconductor is calculated using majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration. To calculate Majority carrier concentration in a Semiconductor, you need Intrinsic carrier concentration (ni) and Minority carrier concentration (M). With our tool, you need to enter the respective value for Intrinsic carrier concentration and Minority carrier concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Majority carrier electron concentration?
In this formula, Majority carrier electron concentration uses Intrinsic carrier concentration and Minority carrier concentration. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • thermal_voltage = Temperature/11600
  • mobility_of_charge_carriers = Drift Velocity/Electric field intensity
  • majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration
  • intrinsic_carrier_concentration = sqrt(Coefficient related to specific semiconductor*(Temperature)^3*e^-(Semiconductor bandgap energy/(2*[BoltZ]*Temperature)))
  • voltage_equivalent_of_temperature = Electron Diffusion Constant/Mobility of electron
  • electron_diffusion_length = sqrt(Electron Diffusion Constant*Relaxation time)
  • conductivity = Number of Electrons*Mobility of electron*[Charge-e]
  • conductivity = Concentration of electrons in the conduction band*[Charge-e]*Mobility of holes+Majority carrier electron concentration*[Charge-e]*Mobility of electron
  • conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes
  • conductivity_of_extrinsic_semiconductors_n_type = Acceptor concentration*[Charge-e]*Mobility of electron
Where is the Majority carrier concentration in a Semiconductor calculator used?
Among many, Majority carrier concentration in a Semiconductor calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList}
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