Steady State Electron Concentration Solution

STEP 0: Pre-Calculation Summary
Formula Used
Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration
nss = n0+δn
This formula uses 3 Variables
Variables Used
Steady State Carrier Concentration - (Measured in 1 per Cubic Meter) - Steady State Carrier Concentration refers to the equilibrium concentration of electrons in the conduction band of the material under steady-state conditions.
Electron Concentration in Conduction Band - (Measured in 1 per Cubic Meter) - Electron Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material.
Excess Carrier Concentration - (Measured in 1 per Cubic Meter) - Excess Carrier Concentration is extra of electron present in the carrier concentration.
STEP 1: Convert Input(s) to Base Unit
Electron Concentration in Conduction Band: 14000000 1 per Cubic Meter --> 14000000 1 per Cubic Meter No Conversion Required
Excess Carrier Concentration: 104900000000000 1 per Cubic Meter --> 104900000000000 1 per Cubic Meter No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
nss = n0n --> 14000000+104900000000000
Evaluating ... ...
nss = 104900014000000
STEP 3: Convert Result to Output's Unit
104900014000000 1 per Cubic Meter --> No Conversion Required
FINAL ANSWER
104900014000000 1E+14 1 per Cubic Meter <-- Steady State Carrier Concentration
(Calculation completed in 00.004 seconds)

Credits

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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20 Energy Band & Charge Carrier Calculators

Intrinsic Carrier Concentration
Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band) *exp(-Energy Gap/(2*[BoltZ]*Temperature))
Carrier Lifetime
Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))
Energy of Electron given Coulomb's Constant
Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)
Steady State Electron Concentration
Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration
Effective Density of State
Go Effective Density of State in Conduction Band = Electron Concentration in Conduction Band/Fermi Function
Fermi Function
Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band
Concentration in Conduction Band
Go Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function
Effective Density State in Valence Band
Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)
Recombination Lifetime
Go Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1
Concentration of Holes in Valence Band
Go Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)
Thermal Generation Rate
Go Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration ^2)
Distribution Coefficient
Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid
Liquid Concentration
Go Impurity Concentration in Liquid = Impurity Concentration in Solid/Distribution Coefficient
Net Rate of Change in Conduction Band
Go Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)
Excess Carrier Concentration
Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime
Optical Generation Rate
Go Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime
Photoelectron Energy
Go Photoelectron Energy = [hP]*Frequency of Incident Light
Conduction Band Energy
Go Conduction Band Energy = Energy Gap+Valence Band Energy
Valence Band Energy
Go Valence Band Energy = Conduction Band Energy-Energy Gap
Energy Gap
Go Energy Gap = Conduction Band Energy-Valence Band Energy

Steady State Electron Concentration Formula

Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration
nss = n0+δn

What is Quasi-Fermi Level?

A quasi Fermi level is a term used in quantum mechanics and especially in solid state physics for the Fermi level that describes the population of electrons separately in the conduction band and valence band, when their populations are displaced from equilibrium.

How to Calculate Steady State Electron Concentration?

Steady State Electron Concentration calculator uses Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration to calculate the Steady State Carrier Concentration, Steady State Electron Concentration refers to the equilibrium concentration of electrons in the conduction band of the material under steady-state conditions. It represents the balance between the generation and recombination processes that govern the behaviour of electrons in the device. Steady State Carrier Concentration is denoted by nss symbol.

How to calculate Steady State Electron Concentration using this online calculator? To use this online calculator for Steady State Electron Concentration, enter Electron Concentration in Conduction Band (n0) & Excess Carrier Concentration n) and hit the calculate button. Here is how the Steady State Electron Concentration calculation can be explained with given input values -> 1E+14 = 14000000+104900000000000.

FAQ

What is Steady State Electron Concentration?
Steady State Electron Concentration refers to the equilibrium concentration of electrons in the conduction band of the material under steady-state conditions. It represents the balance between the generation and recombination processes that govern the behaviour of electrons in the device and is represented as nss = n0n or Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration. Electron Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material & Excess Carrier Concentration is extra of electron present in the carrier concentration.
How to calculate Steady State Electron Concentration?
Steady State Electron Concentration refers to the equilibrium concentration of electrons in the conduction band of the material under steady-state conditions. It represents the balance between the generation and recombination processes that govern the behaviour of electrons in the device is calculated using Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration. To calculate Steady State Electron Concentration, you need Electron Concentration in Conduction Band (n0) & Excess Carrier Concentration n). With our tool, you need to enter the respective value for Electron Concentration in Conduction Band & Excess Carrier Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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