MOSFET as Linear Resistance given Aspect Ratio Calculator

✖Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).ⓘ Channel Length [L]			+10% -10%
✖The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor.ⓘ Mobility of Electrons at Surface of Channel [μ_s]			+10% -10%
✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).ⓘ Channel Width [W_c]			+10% -10%
✖The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.ⓘ Effective Voltage [V_eff]			+10% -10%

✖Linear resistance, the amount of opposition or resistance is directly proportional to the amount of current flowing through it, as described by Ohm's Law.ⓘ MOSFET as Linear Resistance given Aspect Ratio [R_ds]

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Formula

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MOSFET as Linear Resistance given Aspect Ratio

Formula

`"R"_{"ds"} = "L"/("μ"_{"s"}*"C"_{"ox"}*"W"_{"c"}*"V"_{"eff"})`

Example

`"0.16468kΩ"="100μm"/("38m²/V*s"*"940μF"*"10μm"*"1.7V")`

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MOSFET as Linear Resistance given Aspect Ratio Solution

STEP 0: Pre-Calculation Summary

Formula Used

Linear Resistance = Channel Length/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width*Effective Voltage)
R_ds = L/(μ_s*C_ox*W_c*V_eff)
This formula uses 6 Variables

Variables Used

Linear Resistance - (Measured in Ohm) - Linear resistance, the amount of opposition or resistance is directly proportional to the amount of current flowing through it, as described by Ohm's Law.
Channel Length - (Measured in Meter) - Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).
Mobility of Electrons at Surface of Channel - (Measured in Square Meter per Volt per Second) - The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Channel Width - (Measured in Meter) - Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).
Effective Voltage - (Measured in Volt) - The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.

STEP 1: Convert Input(s) to Base Unit

Channel Length: 100 Micrometer --> 0.0001 Meter (Check conversion here)
Mobility of Electrons at Surface of Channel: 38 Square Meter per Volt per Second --> 38 Square Meter per Volt per Second No Conversion Required
Oxide Capacitance: 940 Microfarad --> 0.00094 Farad (Check conversion here)
Channel Width: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Effective Voltage: 1.7 Volt --> 1.7 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

R_ds = L/(μ_s*C_ox*W_c*V_eff) --> 0.0001/(38*0.00094*1E-05*1.7)

Evaluating ... ...

R_ds = 164.679533627561

STEP 3: Convert Result to Output's Unit

164.679533627561 Ohm -->0.164679533627561 Kilohm (Check conversion here)

FINAL ANSWER

0.164679533627561 ≈ 0.16468 Kilohm <-- Linear Resistance

(Calculation completed in 00.004 seconds)

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< 14 Resistance Calculators

MOSFET as Linear Resistance given Aspect Ratio

Go Linear Resistance = Channel Length/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width*Effective Voltage)

Output Resistance of Differential Amplifier

Go Output Resistance = ((Common Mode Input Signal*Transconductance)-Total Current)/(2*Transconductance*Total Current)

Input Resistance of Mosfet

Go Input Resistance = Input Voltage/(Collector Current*Small Signal Current Gain)

Finite Resistance between Drain and Source

Go Finite Resistance = modulus(Positive DC Voltage)/Drain Current

Output Resistance given Channel Length Modulation

Go Output Resistance = 1/(Channel Length Modulation*Drain Current)

Input Resistance given Transconductance

Go Input Resistance = Small Signal Current Gain/Transconductance

Electron Mean Free Path

Go Electron Mean Free Path = 1/(Output Resistance*Drain Current)

Drain Output Resistance

Go Output Resistance = 1/(Electron Mean Free Path*Drain Current)

Output Resistance given Transconductance

Go Output Resistance = 1/(Carrier Mobility*Transconductance)

Voltage Dependent Resistance in MOSFET

Go Finite Resistance = Effective Voltage/Drain Current

Output Resistance of Mosfet

Go Output Resistance = Early Voltage/Collector Current

Small Signal Input Resistance

Go Input Resistance = Input Voltage/Base Current

Conductance in Linear Resistance of MOSFET

Go Conductance of Channel = 1/Linear Resistance

MOSFET as Linear Resistance

Go Linear Resistance = 1/Conductance of Channel

MOSFET as Linear Resistance given Aspect Ratio Formula

Linear Resistance = Channel Length/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width*Effective Voltage)
R_ds = L/(μ_s*C_ox*W_c*V_eff)

What is the condition to use the MOSFET as a linear resistor?

When you slowly increase the gate voltage the MOSFET slowly starts conducting by entering the linear region where it starts developing a voltage across it which we call V DS . In this region, the MOSFET acts as a resistance of finite value.

How to Calculate MOSFET as Linear Resistance given Aspect Ratio?

MOSFET as Linear Resistance given Aspect Ratio calculator uses Linear Resistance = Channel Length/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width*Effective Voltage) to calculate the Linear Resistance, The MOSFET as linear resistance given aspect Ratio acts as a variable resistor in the linear region and as a current source in the saturation region. Unlike a BJT, to use a MOSFET as a switch, you need to operate within the linear region. Linear Resistance is denoted by R_ds symbol.

How to calculate MOSFET as Linear Resistance given Aspect Ratio using this online calculator? To use this online calculator for MOSFET as Linear Resistance given Aspect Ratio, enter Channel Length (L), Mobility of Electrons at Surface of Channel (μ_s), Oxide Capacitance (C_ox), Channel Width (W_c) & Effective Voltage (V_eff) and hit the calculate button. Here is how the MOSFET as Linear Resistance given Aspect Ratio calculation can be explained with given input values -> 0.000165 = 0.0001/(38*0.00094*1E-05*1.7).

FAQ

What is MOSFET as Linear Resistance given Aspect Ratio?

The MOSFET as linear resistance given aspect Ratio acts as a variable resistor in the linear region and as a current source in the saturation region. Unlike a BJT, to use a MOSFET as a switch, you need to operate within the linear region and is represented as R_ds = L/(μ_s*C_ox*W_c*V_eff) or Linear Resistance = Channel Length/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width*Effective Voltage). Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET), The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor, Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits, Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz) & The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.

How to calculate MOSFET as Linear Resistance given Aspect Ratio?

The MOSFET as linear resistance given aspect Ratio acts as a variable resistor in the linear region and as a current source in the saturation region. Unlike a BJT, to use a MOSFET as a switch, you need to operate within the linear region is calculated using Linear Resistance = Channel Length/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width*Effective Voltage). To calculate MOSFET as Linear Resistance given Aspect Ratio, you need Channel Length (L), Mobility of Electrons at Surface of Channel (μ_s), Oxide Capacitance (C_ox), Channel Width (W_c) & Effective Voltage (V_eff). With our tool, you need to enter the respective value for Channel Length, Mobility of Electrons at Surface of Channel, Oxide Capacitance, Channel Width & Effective Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Linear Resistance?

In this formula, Linear Resistance uses Channel Length, Mobility of Electrons at Surface of Channel, Oxide Capacitance, Channel Width & Effective Voltage. We can use 1 other way(s) to calculate the same, which is/are as follows -

Linear Resistance = 1/Conductance of Channel

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