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Potential difference Source To Body(Vsb) Solution

STEP 0: Pre-Calculation Summary
Formula Used
potential_source_to_body = ((Threshold voltage-Threshold Voltage)/body effect coefficient+sqrt(surface potential))^2-surface potential
Vsb = ((VT-Vto)/γ+sqrt(Φs))^2-Φs
This formula uses 1 Functions, 4 Variables
Functions Used
sqrt - Squre root function, sqrt(Number)
Variables Used
Threshold voltage - Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency. (Measured in Volt)
Threshold Voltage - Threshold Voltage When Source is at body potential (Measured in Volt)
body effect coefficient- body effect coefficient is the influence of source-bulk voltage in the current due to change of the threshold voltage by the source-bulk voltage
surface potential - surface potential is a key parameter in evaluating the DC property of thin-film transistors (Measured in Volt)
STEP 1: Convert Input(s) to Base Unit
Threshold voltage: 50 Volt --> 50 Volt No Conversion Required
Threshold Voltage: 10 Volt --> 10 Volt No Conversion Required
body effect coefficient: 4 --> No Conversion Required
surface potential: 7 Volt --> 7 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vsb = ((VT-Vto)/γ+sqrt(Φs))^2-Φs --> ((50-10)/4+sqrt(7))^2-7
Evaluating ... ...
Vsb = 152.915026221292
STEP 3: Convert Result to Output's Unit
152.915026221292 Volt --> No Conversion Required
FINAL ANSWER
152.915026221292 Volt <-- Potential difference Source To Body
(Calculation completed in 00.016 seconds)

10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

Potential difference Source To Body(Vsb) Formula

potential_source_to_body = ((Threshold voltage-Threshold Voltage)/body effect coefficient+sqrt(surface potential))^2-surface potential
Vsb = ((VT-Vto)/γ+sqrt(Φs))^2-Φs

Explain why is the number of gate inputs to CMOS gates usually limited to four?

Higher the number of stacks, slower the gate will be. In NOR and NAND gates the number of gates present in the stack is usually alike as the number of inputs plus one. So input are restricted to four.

How to Calculate Potential difference Source To Body(Vsb)?

Potential difference Source To Body(Vsb) calculator uses potential_source_to_body = ((Threshold voltage-Threshold Voltage)/body effect coefficient+sqrt(surface potential))^2-surface potential to calculate the Potential difference Source To Body, The Potential difference Source To Body(Vsb) formula is defined as The externally applied potential is equal to the voltage drop across the oxide layer plus the voltage drop across the semiconductor. Potential difference Source To Body and is denoted by Vsb symbol.

How to calculate Potential difference Source To Body(Vsb) using this online calculator? To use this online calculator for Potential difference Source To Body(Vsb), enter Threshold voltage (VT), Threshold Voltage (Vto), body effect coefficient (γ) and surface potential (Φs) and hit the calculate button. Here is how the Potential difference Source To Body(Vsb) calculation can be explained with given input values -> 152.915 = ((50-10)/4+sqrt(7))^2-7.

FAQ

What is Potential difference Source To Body(Vsb)?
The Potential difference Source To Body(Vsb) formula is defined as The externally applied potential is equal to the voltage drop across the oxide layer plus the voltage drop across the semiconductor and is represented as Vsb = ((VT-Vto)/γ+sqrt(Φs))^2-Φs or potential_source_to_body = ((Threshold voltage-Threshold Voltage)/body effect coefficient+sqrt(surface potential))^2-surface potential. Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency, Threshold Voltage When Source is at body potential, body effect coefficient is the influence of source-bulk voltage in the current due to change of the threshold voltage by the source-bulk voltage and surface potential is a key parameter in evaluating the DC property of thin-film transistors.
How to calculate Potential difference Source To Body(Vsb)?
The Potential difference Source To Body(Vsb) formula is defined as The externally applied potential is equal to the voltage drop across the oxide layer plus the voltage drop across the semiconductor is calculated using potential_source_to_body = ((Threshold voltage-Threshold Voltage)/body effect coefficient+sqrt(surface potential))^2-surface potential. To calculate Potential difference Source To Body(Vsb), you need Threshold voltage (VT), Threshold Voltage (Vto), body effect coefficient (γ) and surface potential (Φs). With our tool, you need to enter the respective value for Threshold voltage, Threshold Voltage, body effect coefficient and surface potential and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Potential difference Source To Body?
In this formula, Potential difference Source To Body uses Threshold voltage, Threshold Voltage, body effect coefficient and surface potential. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • dynamic_power = Drain Voltage^2*frequency*Capacitance
  • drain_voltage = sqrt(dynamic power/frequency*Capacitance)
  • static_power = static current*Drain Voltage
  • static_current = Static power/Drain Voltage
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
  • threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
  • potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
  • potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
Where is the Potential difference Source To Body(Vsb) calculator used?
Among many, Potential difference Source To Body(Vsb) calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
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