Gate to Collector Potential Solution

STEP 0: Pre-Calculation Summary
Formula Used
Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2
Vgc = (Vgs+Vgd)/2
This formula uses 3 Variables
Variables Used
Gate to Channel Voltage - (Measured in Volt) - Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.
Gate to Source Potential - (Measured in Volt) - Gate to Source Potential is voltage between gate and emitter.
Gate to Drain Potential - (Measured in Volt) - Gate to Drain Potential is defined as the voltage across the gate and the drain junction of the MOSFETs.
STEP 1: Convert Input(s) to Base Unit
Gate to Source Potential: 5 Volt --> 5 Volt No Conversion Required
Gate to Drain Potential: 9.02 Volt --> 9.02 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vgc = (Vgs+Vgd)/2 --> (5+9.02)/2
Evaluating ... ...
Vgc = 7.01
STEP 3: Convert Result to Output's Unit
7.01 Volt --> No Conversion Required
FINAL ANSWER
7.01 Volt <-- Gate to Channel Voltage
(Calculation completed in 00.004 seconds)

Credits

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Created by Shobhit Dimri
Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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Vishwakarma Government Engineering College (VGEC), Ahmedabad
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16 Analog VLSI Design Calculators

Potential between Source to Body
​ Go Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration))
Gate to Source Capacitance
​ Go Gate to Source Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Drain Capacitance)
Gate to Drain Capacitance
​ Go Gate to Drain Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Source Capacitance)
Gate to Base Capacitance
​ Go Gate to Base Capacitance = Gate Capacitance-(Gate to Source Capacitance+Gate to Drain Capacitance)
Drain Voltage
​ Go Base Collector Voltage = sqrt(Dynamic Power/(Frequency*Capacitance))
Potential from Drain to Source
​ Go Drain to Source Potential = (Threshold Voltage DIBL-Threshold Voltage)/DIBL Coefficient
Gate to Channel Voltage
​ Go Gate to Channel Voltage = (Channel Charge/Gate Capacitance)+Threshold Voltage
Gate to Collector Potential
​ Go Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2
Gate to Source Potential
​ Go Gate to Source Potential = 2*Gate to Channel Voltage-Gate to Drain Potential
Gate to Drain Potential
​ Go Gate to Drain Potential = 2*Gate to Channel Voltage-Gate to Source Potential
Minimum High Output Voltage
​ Go Minimum High Output Voltage = High Noise Margin+Minimum High Input Voltage
Minimum High Input Voltage
​ Go Minimum High Input Voltage = Minimum High Output Voltage-High Noise Margin
High Noise Margin
​ Go High Noise Margin = Minimum High Output Voltage-Minimum High Input Voltage
Maximum Low Output Voltage
​ Go Maximum Low Output Voltage = Maximum Low Input Voltage-Low Noise Margin
Maximum Low Input Voltage
​ Go Maximum Low Input Voltage = Low Noise Margin+Maximum Low Output Voltage
Low Noise Margin
​ Go Low Noise Margin = Maximum Low Input Voltage-Maximum Low Output Voltage

Gate to Collector Potential Formula

Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2
Vgc = (Vgs+Vgd)/2

What is the significance of long-channel model?

The long-channel model assumes that the current through an OFF transistor is 0. When a transistor turns ON (Vgs > Vt), the gate attracts carriers (electrons) to form a channel. The electrons drift from source to drain at a rate proportional to the electric field between these regions. Thus, we can compute currents if we
know the amount of charge in the channel and the rate at which it moves.

How to Calculate Gate to Collector Potential?

Gate to Collector Potential calculator uses Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2 to calculate the Gate to Channel Voltage, Gate to Collector Potential formula is defined as the total voltage between the gate and the collector region of the MOSFETs. Gate to Channel Voltage is denoted by Vgc symbol.

How to calculate Gate to Collector Potential using this online calculator? To use this online calculator for Gate to Collector Potential, enter Gate to Source Potential (Vgs) & Gate to Drain Potential (Vgd) and hit the calculate button. Here is how the Gate to Collector Potential calculation can be explained with given input values -> 7.01 = (5+9.02)/2.

FAQ

What is Gate to Collector Potential?
Gate to Collector Potential formula is defined as the total voltage between the gate and the collector region of the MOSFETs and is represented as Vgc = (Vgs+Vgd)/2 or Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2. Gate to Source Potential is voltage between gate and emitter & Gate to Drain Potential is defined as the voltage across the gate and the drain junction of the MOSFETs.
How to calculate Gate to Collector Potential?
Gate to Collector Potential formula is defined as the total voltage between the gate and the collector region of the MOSFETs is calculated using Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2. To calculate Gate to Collector Potential, you need Gate to Source Potential (Vgs) & Gate to Drain Potential (Vgd). With our tool, you need to enter the respective value for Gate to Source Potential & Gate to Drain Potential and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Gate to Channel Voltage?
In this formula, Gate to Channel Voltage uses Gate to Source Potential & Gate to Drain Potential. We can use 1 other way(s) to calculate the same, which is/are as follows -
  • Gate to Channel Voltage = (Channel Charge/Gate Capacitance)+Threshold Voltage
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