Gate to Drain Potential Calculator

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Analog VLSI Design

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✖Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.ⓘ Gate to Channel Voltage [V_gc]			+10% -10%
✖Gate to Source Potential is voltage between gate and emitter.ⓘ Gate to Source Potential [V_gs]			+10% -10%

✖Gate to Drain Potential is defined as the voltage across the gate and the drain junction of the MOSFETs.ⓘ Gate to Drain Potential [V_gd]

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Formula

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Gate to Drain Potential

Formula

`"V"_{"gd"} = 2*"V"_{"gc"}-"V"_{"gs"}`

Example

`"9.022V"=2*"7.011V"-"5V"`

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Gate to Drain Potential Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate to Drain Potential = 2*Gate to Channel Voltage-Gate to Source Potential
V_gd = 2*V_gc-V_gs
This formula uses 3 Variables

Variables Used

Gate to Drain Potential - (Measured in Volt) - Gate to Drain Potential is defined as the voltage across the gate and the drain junction of the MOSFETs.
Gate to Channel Voltage - (Measured in Volt) - Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.
Gate to Source Potential - (Measured in Volt) - Gate to Source Potential is voltage between gate and emitter.

STEP 1: Convert Input(s) to Base Unit

Gate to Channel Voltage: 7.011 Volt --> 7.011 Volt No Conversion Required
Gate to Source Potential: 5 Volt --> 5 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_gd = 2*V_gc-V_gs --> 2*7.011-5

Evaluating ... ...

V_gd = 9.022

STEP 3: Convert Result to Output's Unit

9.022 Volt --> No Conversion Required

FINAL ANSWER

9.022 Volt <-- Gate to Drain Potential

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< 16 Analog VLSI Design Calculators

Potential between Source to Body

Go Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration))

Gate to Source Capacitance

Go Gate to Source Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Drain Capacitance)

Gate to Drain Capacitance

Go Gate to Drain Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Source Capacitance)

Gate to Base Capacitance

Go Gate to Base Capacitance = Gate Capacitance-(Gate to Source Capacitance+Gate to Drain Capacitance)

Drain Voltage

Go Base Collector Voltage = sqrt(Dynamic Power/(Frequency*Capacitance))

Potential from Drain to Source

Go Drain to Source Potential = (Threshold Voltage DIBL-Threshold Voltage)/DIBL Coefficient

Gate to Channel Voltage

Go Gate to Channel Voltage = (Channel Charge/Gate Capacitance)+Threshold Voltage

Gate to Collector Potential

Go Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2

Gate to Source Potential

Go Gate to Source Potential = 2*Gate to Channel Voltage-Gate to Drain Potential

Gate to Drain Potential

Go Gate to Drain Potential = 2*Gate to Channel Voltage-Gate to Source Potential

Minimum High Output Voltage

Go Minimum High Output Voltage = High Noise Margin+Minimum High Input Voltage

Minimum High Input Voltage

Go Minimum High Input Voltage = Minimum High Output Voltage-High Noise Margin

High Noise Margin

Go High Noise Margin = Minimum High Output Voltage-Minimum High Input Voltage

Maximum Low Output Voltage

Go Maximum Low Output Voltage = Maximum Low Input Voltage-Low Noise Margin

Maximum Low Input Voltage

Go Maximum Low Input Voltage = Low Noise Margin+Maximum Low Output Voltage

Low Noise Margin

Go Low Noise Margin = Maximum Low Input Voltage-Maximum Low Output Voltage

Gate to Drain Potential Formula

Gate to Drain Potential = 2*Gate to Channel Voltage-Gate to Source Potential
V_gd = 2*V_gc-V_gs

What is the significance of long-channel model?

The long-channel model assumes that the current through an OFF transistor is 0. When a transistor turns ON (Vgs > Vt), the gate attracts carriers (electrons) to form a channel. The electrons drift from source to drain at a rate proportional to the electric field between these regions. Thus, we can compute currents if we know the amount of charge in the channel and the rate at which it moves.

How to Calculate Gate to Drain Potential?

Gate to Drain Potential calculator uses Gate to Drain Potential = 2*Gate to Channel Voltage-Gate to Source Potential to calculate the Gate to Drain Potential, Gate to Drain Potential formula is defined as the voltage across the gate and the drain junction of the MOSFETs. Gate to Drain Potential is denoted by V_gd symbol.

How to calculate Gate to Drain Potential using this online calculator? To use this online calculator for Gate to Drain Potential, enter Gate to Channel Voltage (V_gc) & Gate to Source Potential (V_gs) and hit the calculate button. Here is how the Gate to Drain Potential calculation can be explained with given input values -> 9.02 = 2*7.011-5.

FAQ

What is Gate to Drain Potential?

Gate to Drain Potential formula is defined as the voltage across the gate and the drain junction of the MOSFETs and is represented as V_gd = 2*V_gc-V_gs or Gate to Drain Potential = 2*Gate to Channel Voltage-Gate to Source Potential. Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage & Gate to Source Potential is voltage between gate and emitter.

How to calculate Gate to Drain Potential?

Gate to Drain Potential formula is defined as the voltage across the gate and the drain junction of the MOSFETs is calculated using Gate to Drain Potential = 2*Gate to Channel Voltage-Gate to Source Potential. To calculate Gate to Drain Potential, you need Gate to Channel Voltage (V_gc) & Gate to Source Potential (V_gs). With our tool, you need to enter the respective value for Gate to Channel Voltage & Gate to Source Potential and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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