Saturation Current using Doping Concentration Calculator

✖The Cross-section area of base-emitter junction is the width in the direction perpendicular to the page.ⓘ Cross-section Area of Base-Emitter Junction [A_E]			+10% -10%
✖Electron Diffusivity is the diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (holes and/or electrons).ⓘ Electron Diffusivity [D_n]			+10% -10%
✖Intrinsic Carrier Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.ⓘ Intrinsic Carrier Concentration [n_i1]			+10% -10%
✖Width of Base junction is the parameter which signifies how wide is the base junction of any analog electronics element.ⓘ Width of Base Junction [W_base]			+10% -10%
✖The Doping concentration of Base is the number of impurities added to the base.ⓘ Doping Concentration of Base [N_B]			+10% -10%

✖Saturation Current is the diode leakage current density in the absence of light. It is an important parameter which differentiates one diode from another.ⓘ Saturation Current using Doping Concentration [I_sat]

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Formula

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Saturation Current using Doping Concentration

Formula

`"I"_{"sat"} = ("A"_{"E"}*"[Charge-e]"*"D"_{"n"}*("n"_{"i1"})^2)/("W"_{"base"}*"N"_{"B"})`

Example

`"2.7E^-12mA"=("8cm²"*"[Charge-e]"*"0.8cm²/s"*("1E5/m³")^2)/("0.002m"*"19/m³")`

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Saturation Current using Doping Concentration Solution

STEP 0: Pre-Calculation Summary

Formula Used

Saturation Current = (Cross-section Area of Base-Emitter Junction*[Charge-e]*Electron Diffusivity*(Intrinsic Carrier Concentration)^2)/(Width of Base Junction*Doping Concentration of Base)
I_sat = (A_E*[Charge-e]*D_n*(n_i1)^2)/(W_base*N_B)
This formula uses 1 Constants, 6 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Variables Used

Saturation Current - (Measured in Ampere) - Saturation Current is the diode leakage current density in the absence of light. It is an important parameter which differentiates one diode from another.
Cross-section Area of Base-Emitter Junction - (Measured in Square Meter) - The Cross-section area of base-emitter junction is the width in the direction perpendicular to the page.
Electron Diffusivity - (Measured in Square Meter Per Second) - Electron Diffusivity is the diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (holes and/or electrons).
Intrinsic Carrier Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Carrier Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
Width of Base Junction - (Measured in Meter) - Width of Base junction is the parameter which signifies how wide is the base junction of any analog electronics element.
Doping Concentration of Base - (Measured in 1 per Cubic Meter) - The Doping concentration of Base is the number of impurities added to the base.

STEP 1: Convert Input(s) to Base Unit

Cross-section Area of Base-Emitter Junction: 8 Square Centimeter --> 0.0008 Square Meter (Check conversion here)
Electron Diffusivity: 0.8 Square Centimeter Per Second --> 8E-05 Square Meter Per Second (Check conversion here)
Intrinsic Carrier Concentration: 100000 1 per Cubic Meter --> 100000 1 per Cubic Meter No Conversion Required
Width of Base Junction: 0.002 Meter --> 0.002 Meter No Conversion Required
Doping Concentration of Base: 19 1 per Cubic Meter --> 19 1 per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_sat = (A_E*[Charge-e]*D_n*(n_i1)^2)/(W_base*N_B) --> (0.0008*[Charge-e]*8E-05*(100000)^2)/(0.002*19)

Evaluating ... ...

I_sat = 2.69840272842105E-15

STEP 3: Convert Result to Output's Unit

2.69840272842105E-15 Ampere -->2.69840272842105E-12 Milliampere (Check conversion here)

FINAL ANSWER

2.69840272842105E-12 ≈ 2.7E-12 Milliampere <-- Saturation Current

(Calculation completed in 00.004 seconds)

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< 14 Base Current Calculators

Base Current using Saturation Current in DC

Go Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Collector Voltage/Thermal Voltage)+Saturation Vapour Pressure*e^(Base-Collector Voltage/Thermal Voltage)

Saturation Current using Doping Concentration

Go Saturation Current = (Cross-section Area of Base-Emitter Junction*[Charge-e]*Electron Diffusivity*(Intrinsic Carrier Concentration)^2)/(Width of Base Junction*Doping Concentration of Base)

Short Circuit Current Gain of BJT

Go Short-Circuit Current Gain = (Common-Emitter Current Gain at Low Frequency)/(1+Complex Frequency Variable*(Emitter-Base Capacitance+Collector-Base Junction Capacitance)*Input Resistance)

Drain Current given Device Parameter

Go Drain Current = 1/2*Transconductance*Aspect Ratio*(Effective Voltage-Threshold Voltage)^2*(1+Device Parameter*Voltage between Drain and Source)

Base Current 2 of BJT

Go Base Current = (Saturation Current/Common Emitter Current Gain)*(e^(Base-Emitter Voltage/Thermal Voltage))

Base Current of PNP Transistor using Saturation Current

Go Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage)

Reference Current of BJT Mirror

Go Reference Current = Collector Current+(2*Collector Current)/Common Emitter Current Gain

Reference Current of BJT Current Mirror

Go Reference Current = (Supply Voltage-Base-Emitter Voltage)/Resistance

Reference Current of BJT Mirror given Collector Current

Go Reference Current = Collector Current*(1+2/Common Emitter Current Gain)

Base Current of PNP Transistor given Emitter Current

Go Base Current = Emitter Current/(Common Emitter Current Gain+1)

Base Current of PNP Transistor using Collector Current

Go Base Current = Collector Current/Common Emitter Current Gain

Base Current 1 of BJT

Go Base Current = Collector Current/Common Emitter Current Gain

Base Current of PNP Transistor using Common-Base Current Gain

Go Base Current = (1-Common-Base Current Gain)*Emitter Current

Total Base Current

Go Base Current = Base Current 1+Base Current 2

Saturation Current using Doping Concentration Formula

What is saturation current in transistor?

The transistor will be biased so that the maximum amount of base current is applied, resulting in maximum collector current resulting in the minimum collector-emitter voltage drop which results in the depletion layer being as small as possible and maximum current flowing through the transistor. Therefore the transistor is switched “Fully-ON”.Then we can define the “saturation region” or “ON mode” when using a bipolar transistor as a switch as being, both junctions forward biased, VB > 0.7v and IC = Maximum. For a PNP transistor, the Emitter potential must be positive with respect to the Base.

How to Calculate Saturation Current using Doping Concentration?

Saturation Current using Doping Concentration calculator uses Saturation Current = (Cross-section Area of Base-Emitter Junction*[Charge-e]*Electron Diffusivity*(Intrinsic Carrier Concentration)^2)/(Width of Base Junction*Doping Concentration of Base) to calculate the Saturation Current, The Saturation current using doping concentration is the point where a further increase in base current will not result in a corresponding increase in collector current. Saturation Current is denoted by I_sat symbol.

How to calculate Saturation Current using Doping Concentration using this online calculator? To use this online calculator for Saturation Current using Doping Concentration, enter Cross-section Area of Base-Emitter Junction (A_E), Electron Diffusivity (D_n), Intrinsic Carrier Concentration (n_i1), Width of Base Junction (W_base) & Doping Concentration of Base (N_B) and hit the calculate button. Here is how the Saturation Current using Doping Concentration calculation can be explained with given input values -> 2.7E-9 = (0.0008*[Charge-e]*8E-05*(100000)^2)/(0.002*19).

FAQ

What is Saturation Current using Doping Concentration?

The Saturation current using doping concentration is the point where a further increase in base current will not result in a corresponding increase in collector current and is represented as I_sat = (A_E*[Charge-e]*D_n*(n_i1)^2)/(W_base*N_B) or Saturation Current = (Cross-section Area of Base-Emitter Junction*[Charge-e]*Electron Diffusivity*(Intrinsic Carrier Concentration)^2)/(Width of Base Junction*Doping Concentration of Base). The Cross-section area of base-emitter junction is the width in the direction perpendicular to the page, Electron Diffusivity is the diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (holes and/or electrons), Intrinsic Carrier Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material, Width of Base junction is the parameter which signifies how wide is the base junction of any analog electronics element & The Doping concentration of Base is the number of impurities added to the base.

How to calculate Saturation Current using Doping Concentration?

The Saturation current using doping concentration is the point where a further increase in base current will not result in a corresponding increase in collector current is calculated using Saturation Current = (Cross-section Area of Base-Emitter Junction*[Charge-e]*Electron Diffusivity*(Intrinsic Carrier Concentration)^2)/(Width of Base Junction*Doping Concentration of Base). To calculate Saturation Current using Doping Concentration, you need Cross-section Area of Base-Emitter Junction (A_E), Electron Diffusivity (D_n), Intrinsic Carrier Concentration (n_i1), Width of Base Junction (W_base) & Doping Concentration of Base (N_B). With our tool, you need to enter the respective value for Cross-section Area of Base-Emitter Junction, Electron Diffusivity, Intrinsic Carrier Concentration, Width of Base Junction & Doping Concentration of Base and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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