Body Effect on Transconductance Solution

STEP 0: Pre-Calculation Summary
Formula Used
Body Transconductance = Change in Threshold to Base Voltage*Transconductance
gmb = Χ*gm
This formula uses 3 Variables
Variables Used
Body Transconductance - (Measured in Siemens) - Body transconductance refers to the measure of how much the output current of a device changes in response to a change in the input voltage. .
Change in Threshold to Base Voltage - Change in Threshold to Base Voltage is it defines the rate at which threshold voltage changes with respect to the base voltage.
Transconductance - (Measured in Siemens) - Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.
STEP 1: Convert Input(s) to Base Unit
Change in Threshold to Base Voltage: 0.2 --> No Conversion Required
Transconductance: 0.5 Millisiemens --> 0.0005 Siemens (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
gmb = Χ*gm --> 0.2*0.0005
Evaluating ... ...
gmb = 0.0001
STEP 3: Convert Result to Output's Unit
0.0001 Siemens -->0.1 Millisiemens (Check conversion here)
FINAL ANSWER
0.1 Millisiemens <-- Body Transconductance
(Calculation completed in 00.004 seconds)

Credits

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Birsa Institute of Technology (BIT), Sindri
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16 Transconductance Calculators

MOSFET Transconductance using Process Transconductance Parameter
Go Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage))
Transconductance given Process Transconductance Parameter
Go Transconductance = Process Transconductance Parameter*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)
Transconductance given Drain Current
Go Transconductance = sqrt(2*Process Transconductance Parameter*Aspect Ratio*Drain Current)
MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage
Go Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage)
Process Transconductance given Transconductance and Drain Current
Go Process Transconductance Parameter = Transconductance^2/(2*Aspect Ratio*Drain Current)
Drain Current given process transconductance and transconductance
Go Drain Current = Transconductance^2/(2*Aspect Ratio*Process Transconductance Parameter)
MOSFET Transconductance given Transconductance Parameter
Go Transconductance = Transconductance Parameter*(Gate-Source Voltage-Threshold Voltage)
Transconductance using Process Transconductance Parameter and Overdrive Voltage
Go Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage
MOSFET Transconductance Parameter using Process Transconductance
Go Transconductance Parameter = Process Transconductance Parameter*Aspect Ratio
Body Effect on Transconductance
Go Body Transconductance = Change in Threshold to Base Voltage*Transconductance
Back Gate Transconductance
Go Back Gate Transconductance = Transconductance*Voltage Efficiency
MOSFET Transconductance given Overdrive Voltage
Go Transconductance = Transconductance Parameter*Overdrive Voltage
Process Transconductance Parameter of MOSFET
Go Transconductance Parameter = Transconductance/Overdrive Voltage
MOSFET Transconductance
Go Transconductance = Change in Drain Current/Gate-Source Voltage
Drain Current using Transconductance
Go Drain Current = (Overdrive Voltage)*Transconductance/2
Transconductance in MOSFET
Go Transconductance = (2*Drain Current)/Overdrive Voltage

15 MOSFET Characterstics Calculators

Conductance of Channel of MOSFET using Gate to Source Voltage
Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)
Voltage Gain given Load Resistance of MOSFET
Go Voltage Gain = Transconductance*(1/(1/Load Resistance+1/Output Resistance))/(1+Transconductance*Source Resistance)
Transition Frequency of MOSFET
Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))
Maximum Voltage Gain at Bias Point
Go Maximum Voltage Gain = 2*(Supply Voltage-Effective Voltage)/(Effective Voltage)
Voltage Gain using Small Signal
Go Voltage Gain = Transconductance*1/(1/Load Resistance+1/Finite Resistance)
Gate to Source Channel Width of MOSFET
Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)
Voltage Gain given Drain Voltage
Go Voltage Gain = (Drain Current*Load Resistance*2)/Effective Voltage
Body Effect on Transconductance
Go Body Transconductance = Change in Threshold to Base Voltage*Transconductance
Saturation Voltage of MOSFET
Go Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage
Bias Voltage of MOSFET
Go Total Instantaneous Bias Voltage = DC Bias Voltage+DC Voltage
Maximum Voltage Gain given all Voltages
Go Maximum Voltage Gain = (Supply Voltage-0.3)/Thermal Voltage
Amplification Factor in Small Signal MOSFET Model
Go Amplification Factor = Transconductance*Output Resistance
Treshold Voltage of MOSFET
Go Threshold Voltage = Gate-Source Voltage-Effective Voltage
Transconductance in MOSFET
Go Transconductance = (2*Drain Current)/Overdrive Voltage
Conductance in Linear Resistance of MOSFET
Go Conductance of Channel = 1/Linear Resistance

Body Effect on Transconductance Formula

Body Transconductance = Change in Threshold to Base Voltage*Transconductance
gmb = Χ*gm

What is voltage gain?

The difference between the output signal voltage level in decibels and the input signal voltage level in decibels; this value is equal to 20 times the common logarithm of the ratio of the output voltage to the input voltage.

How to Calculate Body Effect on Transconductance?

Body Effect on Transconductance calculator uses Body Transconductance = Change in Threshold to Base Voltage*Transconductance to calculate the Body Transconductance, Body Effect on transconductance gives the change in transconductance due to development of voltage between body and source. Body Transconductance is denoted by gmb symbol.

How to calculate Body Effect on Transconductance using this online calculator? To use this online calculator for Body Effect on Transconductance, enter Change in Threshold to Base Voltage (Χ) & Transconductance (gm) and hit the calculate button. Here is how the Body Effect on Transconductance calculation can be explained with given input values -> 100 = 0.2*0.0005.

FAQ

What is Body Effect on Transconductance?
Body Effect on transconductance gives the change in transconductance due to development of voltage between body and source and is represented as gmb = Χ*gm or Body Transconductance = Change in Threshold to Base Voltage*Transconductance. Change in Threshold to Base Voltage is it defines the rate at which threshold voltage changes with respect to the base voltage & Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.
How to calculate Body Effect on Transconductance?
Body Effect on transconductance gives the change in transconductance due to development of voltage between body and source is calculated using Body Transconductance = Change in Threshold to Base Voltage*Transconductance. To calculate Body Effect on Transconductance, you need Change in Threshold to Base Voltage (Χ) & Transconductance (gm). With our tool, you need to enter the respective value for Change in Threshold to Base Voltage & Transconductance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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