Body Effect in NMOS Calculator

✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_T]			+10% -10%
✖The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface.ⓘ Fabrication Process Parameter [γ]			+10% -10%
✖Physical parameters can be used to describe the state or condition of a physical system, or to characterize the way in which the system responds to various stimuli or inputs.ⓘ Physical Parameter [φ_f]			+10% -10%
✖The voltage between body and source is important because it can have an effect on the safe operation of electronic devices.ⓘ Voltage between Body and Source [V_SB]			+10% -10%

✖Change in Threshold Voltage can be caused by various factors, including changes in temperature, radiation exposure, and aging.ⓘ Body Effect in NMOS [ΔV_th]

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Formula

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Body Effect in NMOS

Formula

`"ΔV"_{"th"} = "V"_{"T"}+"γ"*(sqrt(2*"φ"_{"f"}+"V"_{"SB"})-sqrt(2*"φ"_{"f"}))`

Example

`"37.22441V"="1.82V"+"204"*(sqrt(2*"13V"+"1.8V")-sqrt(2*"13V"))`

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Body Effect in NMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))
ΔV_th = V_T+γ*(sqrt(2*φ_f+V_SB)-sqrt(2*φ_f))
This formula uses 1 Functions, 5 Variables

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Change in Threshold Voltage - (Measured in Volt) - Change in Threshold Voltage can be caused by various factors, including changes in temperature, radiation exposure, and aging.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
Fabrication Process Parameter - The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface.
Physical Parameter - (Measured in Volt) - Physical parameters can be used to describe the state or condition of a physical system, or to characterize the way in which the system responds to various stimuli or inputs.
Voltage between Body and Source - (Measured in Volt) - The voltage between body and source is important because it can have an effect on the safe operation of electronic devices.

STEP 1: Convert Input(s) to Base Unit

Threshold Voltage: 1.82 Volt --> 1.82 Volt No Conversion Required
Fabrication Process Parameter: 204 --> No Conversion Required
Physical Parameter: 13 Volt --> 13 Volt No Conversion Required
Voltage between Body and Source: 1.8 Volt --> 1.8 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

ΔV_th = V_T+γ*(sqrt(2*φ_f+V_SB)-sqrt(2*φ_f)) --> 1.82+204*(sqrt(2*13+1.8)-sqrt(2*13))

Evaluating ... ...

ΔV_th = 37.2244074665399

STEP 3: Convert Result to Output's Unit

37.2244074665399 Volt --> No Conversion Required

FINAL ANSWER

37.2244074665399 ≈ 37.22441 Volt <-- Change in Threshold Voltage

(Calculation completed in 00.004 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » N-Channel Enhancement » Body Effect in NMOS

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Birsa Institute of Technology (BIT), Sindri

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< 17 N-Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)

Body Effect in NMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Current Entering Drain Terminal of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)

NMOS as Linear Resistance

Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Drain Current when NMOS Operates as Voltage-Controlled Current Source

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Current Entering Drain-Source at Saturation Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Fabrication Process Parameter of NMOS

Go Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2

Electron Drift Velocity of Channel in NMOS Transistor

Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Total Power Supplied in NMOS

Go Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)

Drain Current given NMOS Operates as Voltage-Controlled Current Source

Go Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio

Output Resistance of Current Source NMOS given Drain Current

Go Output Resistance = Device Parameter/Drain Current without Channel Length Modulation

Total Power Dissipated in NMOS

Go Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance

Positive Voltage given Channel Length in NMOS

Go Voltage = Device Parameter*Length of the Channel

Oxide Capacitance of NMOS

Go Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness

Body Effect in NMOS Formula

What is the cause of body effect in NMOS? what is body bias?

Body effect is caused because the voltage difference between the source and body affects the VT, the body can be thought of as a second gate that helps determine how the transistor turns on and off.
Body bias involves connecting the transistor bodies to a bias network in the circuit layout rather than to power or ground. The body bias can be supplied from an external (off-chip) source or an internal (on-chip) source.

How to Calculate Body Effect in NMOS?

Body Effect in NMOS calculator uses Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter)) to calculate the Change in Threshold Voltage, The body effect in NMOS refers to the change in the transistor threshold voltage resulting from a voltage difference between the transistor source and body. Change in Threshold Voltage is denoted by ΔV_th symbol.

How to calculate Body Effect in NMOS using this online calculator? To use this online calculator for Body Effect in NMOS, enter Threshold Voltage (V_T), Fabrication Process Parameter (γ), Physical Parameter (φ_f) & Voltage between Body and Source (V_SB) and hit the calculate button. Here is how the Body Effect in NMOS calculation can be explained with given input values -> 37.22441 = 1.82+204*(sqrt(2*13+1.8)-sqrt(2*13)).

FAQ

What is Body Effect in NMOS?

The body effect in NMOS refers to the change in the transistor threshold voltage resulting from a voltage difference between the transistor source and body and is represented as ΔV_th = V_T+γ*(sqrt(2*φ_f+V_SB)-sqrt(2*φ_f)) or Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter)). Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics, The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface, Physical parameters can be used to describe the state or condition of a physical system, or to characterize the way in which the system responds to various stimuli or inputs & The voltage between body and source is important because it can have an effect on the safe operation of electronic devices.

How to calculate Body Effect in NMOS?

The body effect in NMOS refers to the change in the transistor threshold voltage resulting from a voltage difference between the transistor source and body is calculated using Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter)). To calculate Body Effect in NMOS, you need Threshold Voltage (V_T), Fabrication Process Parameter (γ), Physical Parameter (φ_f) & Voltage between Body and Source (V_SB). With our tool, you need to enter the respective value for Threshold Voltage, Fabrication Process Parameter, Physical Parameter & Voltage between Body and Source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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