NMOS as Linear Resistance Calculator

✖Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.ⓘ Length of the Channel [L]			+10% -10%
✖The mobility of electrons at surface of channel refers to the ability of electrons to move or conduct within a material's surface layer when subjected to an electric field.ⓘ Mobility of Electrons at Surface of Channel [μ_n]			+10% -10%
✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.ⓘ Width of Channel [W_c]			+10% -10%
✖The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor.ⓘ Gate Source Voltage [V_gs]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_T]			+10% -10%

✖Linear resistance acts as a variable resistor in the linear region and as a current source in the saturation region.ⓘ NMOS as Linear Resistance [r_DS]

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Formula

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NMOS as Linear Resistance

Formula

`"r"_{"DS"} = "L"/("μ"_{"n"}*"C"_{"ox"}*"W"_{"c"}*("V"_{"gs"}-"V"_{"T"}))`

Example

`"7.960702kΩ"="3μm"/("2.2m²/V*s"*"2.02μF"*"10μm"*("10.3V"-"1.82V"))`

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NMOS as Linear Resistance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))
r_DS = L/(μ_n*C_ox*W_c*(V_gs-V_T))
This formula uses 7 Variables

Variables Used

Linear Resistance - (Measured in Ohm) - Linear resistance acts as a variable resistor in the linear region and as a current source in the saturation region.
Length of the Channel - (Measured in Meter) - Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.
Mobility of Electrons at Surface of Channel - (Measured in Square Meter per Volt per Second) - The mobility of electrons at surface of channel refers to the ability of electrons to move or conduct within a material's surface layer when subjected to an electric field.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Width of Channel - (Measured in Meter) - The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.
Gate Source Voltage - (Measured in Volt) - The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

STEP 1: Convert Input(s) to Base Unit

Length of the Channel: 3 Micrometer --> 3E-06 Meter (Check conversion here)
Mobility of Electrons at Surface of Channel: 2.2 Square Meter per Volt per Second --> 2.2 Square Meter per Volt per Second No Conversion Required
Oxide Capacitance: 2.02 Microfarad --> 2.02E-06 Farad (Check conversion here)
Width of Channel: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Gate Source Voltage: 10.3 Volt --> 10.3 Volt No Conversion Required
Threshold Voltage: 1.82 Volt --> 1.82 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

r_DS = L/(μ_n*C_ox*W_c*(V_gs-V_T)) --> 3E-06/(2.2*2.02E-06*1E-05*(10.3-1.82))

Evaluating ... ...

r_DS = 7960.70173055041

STEP 3: Convert Result to Output's Unit

7960.70173055041 Ohm -->7.96070173055041 Kilohm (Check conversion here)

FINAL ANSWER

7.96070173055041 ≈ 7.960702 Kilohm <-- Linear Resistance

(Calculation completed in 00.020 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » N-Channel Enhancement » NMOS as Linear Resistance

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< 17 N-Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)

Body Effect in NMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Current Entering Drain Terminal of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)

NMOS as Linear Resistance

Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Drain Current when NMOS Operates as Voltage-Controlled Current Source

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Current Entering Drain-Source at Saturation Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Fabrication Process Parameter of NMOS

Go Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2

Electron Drift Velocity of Channel in NMOS Transistor

Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Total Power Supplied in NMOS

Go Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)

Drain Current given NMOS Operates as Voltage-Controlled Current Source

Go Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio

Output Resistance of Current Source NMOS given Drain Current

Go Output Resistance = Device Parameter/Drain Current without Channel Length Modulation

Total Power Dissipated in NMOS

Go Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance

Positive Voltage given Channel Length in NMOS

Go Voltage = Device Parameter*Length of the Channel

Oxide Capacitance of NMOS

Go Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness

NMOS as Linear Resistance Formula

Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))
r_DS = L/(μ_n*C_ox*W_c*(V_gs-V_T))

What is the condition to use the MOSFET as a linear resistor?

When you slowly increase the gate voltage the MOSFET slowly starts conducting by entering the linear region where it starts developing a voltage across it which we call V _DS . In this region, the MOSFET acts as a resistance of finite value.

How to Calculate NMOS as Linear Resistance?

NMOS as Linear Resistance calculator uses Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage)) to calculate the Linear Resistance, The NMOS as linear resistance acts as a variable resistor in the linear region and as a current source in the saturation region. Unlike a BJT, to use a MOSFET as a switch, you need to operate within the linear region. Linear Resistance is denoted by r_DS symbol.

How to calculate NMOS as Linear Resistance using this online calculator? To use this online calculator for NMOS as Linear Resistance, enter Length of the Channel (L), Mobility of Electrons at Surface of Channel (μ_n), Oxide Capacitance (C_ox), Width of Channel (W_c), Gate Source Voltage (V_gs) & Threshold Voltage (V_T) and hit the calculate button. Here is how the NMOS as Linear Resistance calculation can be explained with given input values -> 0.007961 = 3E-06/(2.2*2.02E-06*1E-05*(10.3-1.82)).

FAQ

What is NMOS as Linear Resistance?

The NMOS as linear resistance acts as a variable resistor in the linear region and as a current source in the saturation region. Unlike a BJT, to use a MOSFET as a switch, you need to operate within the linear region and is represented as r_DS = L/(μ_n*C_ox*W_c*(V_gs-V_T)) or Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage)). Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location, The mobility of electrons at surface of channel refers to the ability of electrons to move or conduct within a material's surface layer when subjected to an electric field, Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits, The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel, The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

How to calculate NMOS as Linear Resistance?

The NMOS as linear resistance acts as a variable resistor in the linear region and as a current source in the saturation region. Unlike a BJT, to use a MOSFET as a switch, you need to operate within the linear region is calculated using Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage)). To calculate NMOS as Linear Resistance, you need Length of the Channel (L), Mobility of Electrons at Surface of Channel (μ_n), Oxide Capacitance (C_ox), Width of Channel (W_c), Gate Source Voltage (V_gs) & Threshold Voltage (V_T). With our tool, you need to enter the respective value for Length of the Channel, Mobility of Electrons at Surface of Channel, Oxide Capacitance, Width of Channel, Gate Source Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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