Payal Priya
Birsa Institute of Technology (BIT), Sindri
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Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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11 Other formulas that you can solve using the same Inputs

Current entering drain terminal of MOSFET when Vgs is given
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2))) GO
Conductance of channel of MOSFET when Vgs is given
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage) GO
Current flowing through the induced channel in the transistor when Vgs is given
output current =(Mobility of electron*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage))*Saturation voltage between drain and source GO
MOSFET as linear resistance when Vgs is given
MOSFET as linear resistance=Length of the Channel/((Mobility of electrons at the surface of channel*Oxide Capacitance*Width of the Channel)*(Voltage across the oxide-Threshold voltage)) GO
Drain current
Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source GO
Drain saturation current of MOSFET when Vgs is given
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)^2 GO
Saturation voltage of MOSFET
Saturation voltage between drain and source=Voltage across the oxide-Threshold voltage GO
Saturation voltage between drain and source
Saturation voltage between drain and source=Gate to source voltage-Threshold voltage GO
Effective voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Overdrive Voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Saturation drain current
Saturation drain current=[BoltZ]*((Gate to source voltage-Threshold voltage)^2) GO

1 Other formulas that calculate the same Output

Body effect in NMOS
Change in threshold voltage=Threshold voltage+Fabrication-process parameter*(sqrt(2*Physical parameter+Voltage between body and source)-sqrt(2*Physical parameter)) GO

Body effect in PMOS Formula

Change in threshold voltage=Threshold voltage+Fabrication-process parameter*(sqrt(2*Physical parameter+Voltage between body and source)-sqrt(2*Physical parameter))
V<sub>to</sub>=V<sub>T</sub>+γ *(sqrt(2*φ<sub>f</sub>+V<sub>SB</sub>)-sqrt(2*φ<sub>f</sub>))
More formulas
Effective voltage of MOSFET GO
Magnitude of the electron charge in the channel of MOSFET GO
Oxide capacitance of MOSFETs GO
Total capacitance between gate and channel of MOSFETs GO
Electric field across the length of the channel of NMOS transistor GO
Electron drift velocity of the channel in NMOS transistor GO
Current flowing through the induced channel in the transistor GO
Overdrive Voltage of MOSFET GO
Current flowing through the induced channel in the transistor when Vgs is given GO
Conductance of channel of MOSFETs GO
Conductance of channel of MOSFET when Vgs is given GO
Process transconductance parameter of MOSFET GO
MOSFET transconductance parameter GO
MOSFET transconductance parameter in terms of process transconductance GO
MOSFET as linear resistance GO
Transistor aspect ratio GO
MOSFET as linear resistance when aspect ratio is given GO
MOSFET as linear resistance when Vgs is given GO
Current entering drain terminal of MOSFET GO
Current entering drain terminal of MOSFET when Vgs is given GO
Current entering drain terminal of MOSFET at saturation GO
Saturation voltage of MOSFET GO
Drain saturation current of MOSFET GO
Drain saturation current of MOSFET when Vgs is given GO
Differential input signal of the non-inverting configuration GO
Drain current when MOSFET operates as a voltage-controlled current source GO
Drain current when MOSFET operates as a voltage-controlled current source in terms of Vov GO
Drain current when device parameter is given GO
Positive voltage when device parameter is given in MOSFET GO
Positive voltage when the channel length is given in MOSFET GO
Output resistance of current source of MOSFET GO
Output resistance of current source when device parameter is given GO
Output resistance of current source when drain current is given GO
Drain current without channel-length modulation of MOSFET GO
Body effect in NMOS GO
Fabrication process parameter of NMOS GO

What is the cause of body effect in PMOS? what is body bias?

Body effect is caused because the voltage difference between the source and body affects the VT, the body can be thought of as a second gate that helps determine how the transistor turns on and off. Body bias involves connecting the transistor bodies to a bias network in the circuit layout rather than to power or ground. The body bias can be supplied from an external (off-chip) source or an internal (on-chip) source.

How to Calculate Body effect in PMOS?

Body effect in PMOS calculator uses Change in threshold voltage=Threshold voltage+Fabrication-process parameter*(sqrt(2*Physical parameter+Voltage between body and source)-sqrt(2*Physical parameter)) to calculate the Change in threshold voltage, The Body effect in PMOS refers to the change in the transistor threshold voltage (V T) resulting from a voltage difference between the transistor source and body. Change in threshold voltage and is denoted by Vto symbol.

How to calculate Body effect in PMOS using this online calculator? To use this online calculator for Body effect in PMOS, enter Threshold voltage (VT), Fabrication-process parameter (γ ), Physical parameter f) and Voltage between body and source (VSB) and hit the calculate button. Here is how the Body effect in PMOS calculation can be explained with given input values -> 50.90048 = 50+0.4*(sqrt(2*0.6+10)-sqrt(2*0.6)).

FAQ

What is Body effect in PMOS?
The Body effect in PMOS refers to the change in the transistor threshold voltage (V T) resulting from a voltage difference between the transistor source and body and is represented as Vto=VT+γ *(sqrt(2*φf+VSB)-sqrt(2*φf)) or Change in threshold voltage=Threshold voltage+Fabrication-process parameter*(sqrt(2*Physical parameter+Voltage between body and source)-sqrt(2*Physical parameter)). Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency, The fabrication-process parameter is the process that starts with the oxidation of silicon substrate (Fig 2.4(a)) in which a relatively thick oxide layer is deposited on the surface, The physical parameter is one of the various parameters of MOSFET and The voltage between body and source is applied voltage in NMOS transistor, having induced a channel.
How to calculate Body effect in PMOS?
The Body effect in PMOS refers to the change in the transistor threshold voltage (V T) resulting from a voltage difference between the transistor source and body is calculated using Change in threshold voltage=Threshold voltage+Fabrication-process parameter*(sqrt(2*Physical parameter+Voltage between body and source)-sqrt(2*Physical parameter)). To calculate Body effect in PMOS, you need Threshold voltage (VT), Fabrication-process parameter (γ ), Physical parameter f) and Voltage between body and source (VSB). With our tool, you need to enter the respective value for Threshold voltage, Fabrication-process parameter, Physical parameter and Voltage between body and source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Change in threshold voltage?
In this formula, Change in threshold voltage uses Threshold voltage, Fabrication-process parameter, Physical parameter and Voltage between body and source. We can use 1 other way(s) to calculate the same, which is/are as follows -
  • Change in threshold voltage=Threshold voltage+Fabrication-process parameter*(sqrt(2*Physical parameter+Voltage between body and source)-sqrt(2*Physical parameter))
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