Body effect in PMOS Calculator

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✖Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency.ⓘ Threshold voltage [V_T]			+10% -10%
✖The fabrication-process parameter is the process that starts with the oxidation of silicon substrate (Fig 2.4(a)) in which a relatively thick oxide layer is deposited on the surface.ⓘ Fabrication-process parameter [γ ]			+10% -10%
✖The physical parameter is one of the various parameters of MOSFET.ⓘ Physical parameter [φ_f]			+10% -10%
✖The voltage between body and source is applied voltage in NMOS transistor, having induced a channel.ⓘ Voltage between body and source [V_SB]			+10% -10%

✖The change in threshold voltage is because of the effect of the voltage applies between drain and source in an induced channel.ⓘ Body effect in PMOS [V_to]

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Body effect in PMOS

Payal Priya

Birsa Institute of Technology (BIT), Sindri

Payal Priya has created this Calculator and 300+ more calculators!

Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 500+ more calculators!

< 11 Other formulas that you can solve using the same Inputs

Current entering drain terminal of MOSFET when Vgs is given

Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2))) GO

Conductance of channel of MOSFET when Vgs is given

Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage) GO

Current flowing through the induced channel in the transistor when Vgs is given

output current =(Mobility of electron*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage))*Saturation voltage between drain and source GO

MOSFET as linear resistance when Vgs is given

MOSFET as linear resistance=Length of the Channel/((Mobility of electrons at the surface of channel*Oxide Capacitance*Width of the Channel)*(Voltage across the oxide-Threshold voltage)) GO

Drain current

Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source GO

Drain saturation current of MOSFET when Vgs is given

Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)^2 GO

Saturation voltage of MOSFET

Saturation voltage between drain and source=Voltage across the oxide-Threshold voltage GO

Saturation voltage between drain and source

Saturation voltage between drain and source=Gate to source voltage-Threshold voltage GO

Effective voltage of MOSFET

Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO

Overdrive Voltage of MOSFET

Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO

Saturation drain current

Saturation drain current=[BoltZ]*((Gate to source voltage-Threshold voltage)^2) GO

< 1 Other formulas that calculate the same Output

Body effect in NMOS

Change in threshold voltage=Threshold voltage+Fabrication-process parameter*(sqrt(2*Physical parameter+Voltage between body and source)-sqrt(2*Physical parameter)) GO

Body effect in PMOS Formula

Change in threshold voltage=Threshold voltage+Fabrication-process parameter*(sqrt(2*Physical parameter+Voltage between body and source)-sqrt(2*Physical parameter))
Vto=VT+γ *(sqrt(2*φf+VSB)-sqrt(2*φf))

More formulas

Effective voltage of MOSFET GO

Magnitude of the electron charge in the channel of MOSFET GO

Oxide capacitance of MOSFETs GO

Total capacitance between gate and channel of MOSFETs GO

Electric field across the length of the channel of NMOS transistor GO

Electron drift velocity of the channel in NMOS transistor GO

Current flowing through the induced channel in the transistor GO

Overdrive Voltage of MOSFET GO

Current flowing through the induced channel in the transistor when Vgs is given GO

Conductance of channel of MOSFETs GO

Conductance of channel of MOSFET when Vgs is given GO

Process transconductance parameter of MOSFET GO

MOSFET transconductance parameter GO

MOSFET transconductance parameter in terms of process transconductance GO

MOSFET as linear resistance GO

Transistor aspect ratio GO

MOSFET as linear resistance when aspect ratio is given GO

MOSFET as linear resistance when Vgs is given GO

Current entering drain terminal of MOSFET GO

Current entering drain terminal of MOSFET when Vgs is given GO

Current entering drain terminal of MOSFET at saturation GO

Saturation voltage of MOSFET GO

Drain saturation current of MOSFET GO

Drain saturation current of MOSFET when Vgs is given GO

Differential input signal of the non-inverting configuration GO

Drain current when MOSFET operates as a voltage-controlled current source GO

Drain current when MOSFET operates as a voltage-controlled current source in terms of Vov GO

Drain current when device parameter is given GO

Positive voltage when device parameter is given in MOSFET GO

Positive voltage when the channel length is given in MOSFET GO

Output resistance of current source of MOSFET GO

Output resistance of current source when device parameter is given GO

Output resistance of current source when drain current is given GO

Drain current without channel-length modulation of MOSFET GO

Body effect in NMOS GO

Fabrication process parameter of NMOS GO

What is the cause of body effect in PMOS? what is body bias?

Body effect is caused because the voltage difference between the source and body affects the V_T, the body can be thought of as a second gate that helps determine how the transistor turns on and off. Body bias involves connecting the transistor bodies to a bias network in the circuit layout rather than to power or ground. The body bias can be supplied from an external (off-chip) source or an internal (on-chip) source.

How to Calculate Body effect in PMOS?

Body effect in PMOS calculator uses Change in threshold voltage=Threshold voltage+Fabrication-process parameter*(sqrt(2*Physical parameter+Voltage between body and source)-sqrt(2*Physical parameter)) to calculate the Change in threshold voltage, The Body effect in PMOS refers to the change in the transistor threshold voltage (V _T) resulting from a voltage difference between the transistor source and body. Change in threshold voltage and is denoted by V_to symbol.

How to calculate Body effect in PMOS using this online calculator? To use this online calculator for Body effect in PMOS, enter Threshold voltage (V_T), Fabrication-process parameter (γ ), Physical parameter (φ_f) and Voltage between body and source (V_SB) and hit the calculate button. Here is how the Body effect in PMOS calculation can be explained with given input values -> 50.90048 = 50+0.4*(sqrt(2*0.6+10)-sqrt(2*0.6)).

FAQ

What is Body effect in PMOS?

The Body effect in PMOS refers to the change in the transistor threshold voltage (V _T) resulting from a voltage difference between the transistor source and body and is represented as V_to=V_T+γ *(sqrt(2*φ_f+V_SB)-sqrt(2*φ_f)) or Change in threshold voltage=Threshold voltage+Fabrication-process parameter*(sqrt(2*Physical parameter+Voltage between body and source)-sqrt(2*Physical parameter)). Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency, The fabrication-process parameter is the process that starts with the oxidation of silicon substrate (Fig 2.4(a)) in which a relatively thick oxide layer is deposited on the surface, The physical parameter is one of the various parameters of MOSFET and The voltage between body and source is applied voltage in NMOS transistor, having induced a channel.

How to calculate Body effect in PMOS?

The Body effect in PMOS refers to the change in the transistor threshold voltage (V _T) resulting from a voltage difference between the transistor source and body is calculated using Change in threshold voltage=Threshold voltage+Fabrication-process parameter*(sqrt(2*Physical parameter+Voltage between body and source)-sqrt(2*Physical parameter)). To calculate Body effect in PMOS, you need Threshold voltage (V_T), Fabrication-process parameter (γ ), Physical parameter (φ_f) and Voltage between body and source (V_SB). With our tool, you need to enter the respective value for Threshold voltage, Fabrication-process parameter, Physical parameter and Voltage between body and source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Change in threshold voltage?

In this formula, Change in threshold voltage uses Threshold voltage, Fabrication-process parameter, Physical parameter and Voltage between body and source. We can use 1 other way(s) to calculate the same, which is/are as follows -

Change in threshold voltage=Threshold voltage+Fabrication-process parameter*(sqrt(2*Physical parameter+Voltage between body and source)-sqrt(2*Physical parameter))

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