Body Effect in PMOS Calculator

✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_T]			+10% -10%
✖The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface.ⓘ Fabrication Process Parameter [γ]			+10% -10%
✖Physical parameters can be used to describe the state or condition of a physical system, or to characterize the way in which the system responds to various stimuli or inputs.ⓘ Physical Parameter [φ_f]			+10% -10%
✖The voltage between body and source is important because it can have an effect on the safe operation of electronic devices.ⓘ Voltage between Body and Source [V_SB]			+10% -10%

✖Change in Threshold Voltage can be caused by various factors, including changes in temperature, radiation exposure, and aging.ⓘ Body Effect in PMOS [ΔV_t]

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Formula

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Body Effect in PMOS

Formula

`"ΔV"_{"t"} = "V"_{"T"}+"γ"*(sqrt(2*"φ"_{"f"}+"V"_{"SB"})-sqrt(2*"φ"_{"f"}))`

Example

`"1.600478V"="0.7V"+"0.4"*(sqrt(2*"0.6V"+"10V")-sqrt(2*"0.6V"))`

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Body Effect in PMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))
ΔV_t = V_T+γ*(sqrt(2*φ_f+V_SB)-sqrt(2*φ_f))
This formula uses 1 Functions, 5 Variables

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Change in Threshold Voltage - (Measured in Volt) - Change in Threshold Voltage can be caused by various factors, including changes in temperature, radiation exposure, and aging.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
Fabrication Process Parameter - The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface.
Physical Parameter - (Measured in Volt) - Physical parameters can be used to describe the state or condition of a physical system, or to characterize the way in which the system responds to various stimuli or inputs.
Voltage between Body and Source - (Measured in Volt) - The voltage between body and source is important because it can have an effect on the safe operation of electronic devices.

STEP 1: Convert Input(s) to Base Unit

Threshold Voltage: 0.7 Volt --> 0.7 Volt No Conversion Required
Fabrication Process Parameter: 0.4 --> No Conversion Required
Physical Parameter: 0.6 Volt --> 0.6 Volt No Conversion Required
Voltage between Body and Source: 10 Volt --> 10 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

ΔV_t = V_T+γ*(sqrt(2*φ_f+V_SB)-sqrt(2*φ_f)) --> 0.7+0.4*(sqrt(2*0.6+10)-sqrt(2*0.6))

Evaluating ... ...

ΔV_t = 1.60047799645039

STEP 3: Convert Result to Output's Unit

1.60047799645039 Volt --> No Conversion Required

FINAL ANSWER

1.60047799645039 ≈ 1.600478 Volt <-- Change in Threshold Voltage

(Calculation completed in 00.004 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » P-Channel Enhancement » Body Effect in PMOS

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< 14 P-Channel Enhancement Calculators

Overall Drain Current of PMOS Transistor

Go Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))

Drain Current in Triode Region of PMOS Transistor

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)

Body Effect in PMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Drain Current in Triode Region of PMOS Transistor given Vsd

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source

Drain Current in Saturation Region of PMOS Transistor

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Backgate Effect Parameter in PMOS

Go Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance

Drain Current from Source to Drain

Go Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)

Inversion Layer Charge at Pinch-Off Condition in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)

Drain Current in Saturation Region of PMOS Transistor given Vov

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Inversion Layer Charge in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)

Current in Inversion Channel of PMOS

Go Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)

Current in Inversion Channel of PMOS given Mobility

Go Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel

Overdrive Voltage of PMOS

Go Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)

Process Transconductance Parameter of PMOS

Go Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance

Body Effect in PMOS Formula

What is the cause of body effect in PMOS? what is body bias?

Body effect is caused because the voltage difference between the source and body affects the V_T, the body can be thought of as a second gate that helps determine how the transistor turns on and off. Body bias involves connecting the transistor bodies to a bias network in the circuit layout rather than to power or ground. The body bias can be supplied from an external (off-chip) source or an internal (on-chip) source.

How to Calculate Body Effect in PMOS?

Body Effect in PMOS calculator uses Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter)) to calculate the Change in Threshold Voltage, The Body effect in PMOS refers to the change in the transistor threshold voltage (V _T) resulting from a voltage difference between the transistor source and body. Change in Threshold Voltage is denoted by ΔV_t symbol.

How to calculate Body Effect in PMOS using this online calculator? To use this online calculator for Body Effect in PMOS, enter Threshold Voltage (V_T), Fabrication Process Parameter (γ), Physical Parameter (φ_f) & Voltage between Body and Source (V_SB) and hit the calculate button. Here is how the Body Effect in PMOS calculation can be explained with given input values -> 1.600478 = 0.7+0.4*(sqrt(2*0.6+10)-sqrt(2*0.6)).

FAQ

What is Body Effect in PMOS?

The Body effect in PMOS refers to the change in the transistor threshold voltage (V _T) resulting from a voltage difference between the transistor source and body and is represented as ΔV_t = V_T+γ*(sqrt(2*φ_f+V_SB)-sqrt(2*φ_f)) or Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter)). Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics, The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface, Physical parameters can be used to describe the state or condition of a physical system, or to characterize the way in which the system responds to various stimuli or inputs & The voltage between body and source is important because it can have an effect on the safe operation of electronic devices.

How to calculate Body Effect in PMOS?

The Body effect in PMOS refers to the change in the transistor threshold voltage (V _T) resulting from a voltage difference between the transistor source and body is calculated using Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter)). To calculate Body Effect in PMOS, you need Threshold Voltage (V_T), Fabrication Process Parameter (γ), Physical Parameter (φ_f) & Voltage between Body and Source (V_SB). With our tool, you need to enter the respective value for Threshold Voltage, Fabrication Process Parameter, Physical Parameter & Voltage between Body and Source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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