Carrier Lifetime Solution

STEP 0: Pre-Calculation Summary
Formula Used
Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))
Ta = 1/(αr*(p0+n0))
This formula uses 4 Variables
Variables Used
Carrier Lifetime - (Measured in Second) - Carrier Lifetime is defined as the average time it takes for a minority carrier to recombine.
Proportionality for Recombination - (Measured in Cubic Meter per Second) - Proportionality for recombination is denoted by the symbol αr.
Holes Concentration in Valance Band - (Measured in 1 per Cubic Meter) - Holes Concentration in Valance Band refers to the quantity or abundance of holes present in the valence band of a semiconductor material.
Electron Concentration in Conduction Band - (Measured in 1 per Cubic Meter) - Electron Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material.
STEP 1: Convert Input(s) to Base Unit
Proportionality for Recombination: 1.2E-06 Cubic Meter per Second --> 1.2E-06 Cubic Meter per Second No Conversion Required
Holes Concentration in Valance Band: 230000000000 1 per Cubic Meter --> 230000000000 1 per Cubic Meter No Conversion Required
Electron Concentration in Conduction Band: 14000000 1 per Cubic Meter --> 14000000 1 per Cubic Meter No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ta = 1/(αr*(p0+n0)) --> 1/(1.2E-06*(230000000000+14000000))
Evaluating ... ...
Ta = 3.62296787731761E-06
STEP 3: Convert Result to Output's Unit
3.62296787731761E-06 Second --> No Conversion Required
FINAL ANSWER
3.62296787731761E-06 3.6E-6 Second <-- Carrier Lifetime
(Calculation completed in 00.004 seconds)

Credits

Created by Shobhit Dimri
Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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20 Energy Band & Charge Carrier Calculators

Intrinsic Carrier Concentration
Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band)*exp(-Energy Gap/(2*[BoltZ]*Temperature))
Carrier Lifetime
Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))
Energy of Electron given Coulomb's Constant
Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)
Steady State Electron Concentration
Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration
Concentration in Conduction Band
Go Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function
Effective Density of State
Go Effective Density of State in Conduction Band = Electron Concentration in Conduction Band/Fermi Function
Fermi Function
Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band
Effective Density State in Valence Band
Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)
Concentration of Holes in Valence Band
Go Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)
Recombination Lifetime
Go Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1
Distribution Coefficient
Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid
Liquid Concentration
Go Impurity Concentration in Liquid = Impurity Concentration in Solid/Distribution Coefficient
Net Rate of Change in Conduction Band
Go Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)
Thermal Generation Rate
Go Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration^2)
Excess Carrier Concentration
Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime
Optical Generation Rate
Go Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime
Photoelectron Energy
Go Photoelectron Energy = [hP]*Frequency of Incident Light
Conduction Band Energy
Go Conduction Band Energy = Energy Gap+Valence Band Energy
Valence Band Energy
Go Valence Band Energy = Conduction Band Energy-Energy Gap
Energy Gap
Go Energy Gap = Conduction Band Energy-Valence Band Energy

15 Semiconductor Carriers Calculators

Intrinsic Carrier Concentration
Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band)*exp(-Energy Gap/(2*[BoltZ]*Temperature))
Carrier Lifetime
Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))
Radius of Nth Orbit of Electron
Go Radius of nth Orbit of Electron = ([Coulomb]*Quantum Number^2*[hP]^2)/(Mass of Particle*[Charge-e]^2)
Quantum State
Go Energy in Quantum State = (Quantum Number^2*pi^2*[hP]^2)/(2*Mass of Particle*Potential Well Length^2)
Electron Flux Density
Go Electron Flux Density = (Mean Free Path Electron/(2*Time))*Difference in Electron Concentration
Fermi Function
Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band
Effective Density State in Valence Band
Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)
Distribution Coefficient
Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid
Electron Multiplication
Go Electron Multiplication = Number of Electron Out of Region/Number of Electron in Region
Excess Carrier Concentration
Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime
Electron Current Density
Go Electron Current Density = Total Carrier Current Density-Hole Current Density
Hole Current Density
Go Hole Current Density = Total Carrier Current Density-Electron Current Density
Mean Time Spend by Hole
Go Mean Time Spend by Hole = Optical Generation Rate*Majority Carrier Decay
Photoelectron Energy
Go Photoelectron Energy = [hP]*Frequency of Incident Light
Conduction Band Energy
Go Conduction Band Energy = Energy Gap+Valence Band Energy

Carrier Lifetime Formula

Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))
Ta = 1/(αr*(p0+n0))

How do you measure lifetime of a carrier?

Traditionally, direct electrical measurements of minority carrier lifetimes are made using direct current (DC) photoconductive decay (PCD) measurements, whereas non-invasive, contact-free lifetime measurements are made using time-resolved microwave reflectance (TMR), or time-resolved photoluminescence (TRPL).

How to Calculate Carrier Lifetime?

Carrier Lifetime calculator uses Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band)) to calculate the Carrier Lifetime, The Carrier Lifetime formula is defined as carrier lifetime is defined as the average time it takes for a minority carrier to recombine. The process through which this is done is typically known as minority carrier recombination. Carrier Lifetime is denoted by Ta symbol.

How to calculate Carrier Lifetime using this online calculator? To use this online calculator for Carrier Lifetime, enter Proportionality for Recombination r), Holes Concentration in Valance Band (p0) & Electron Concentration in Conduction Band (n0) and hit the calculate button. Here is how the Carrier Lifetime calculation can be explained with given input values -> 3.6E-6 = 1/(1.2E-06*(230000000000+14000000)).

FAQ

What is Carrier Lifetime?
The Carrier Lifetime formula is defined as carrier lifetime is defined as the average time it takes for a minority carrier to recombine. The process through which this is done is typically known as minority carrier recombination and is represented as Ta = 1/(αr*(p0+n0)) or Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band)). Proportionality for recombination is denoted by the symbol αr, Holes Concentration in Valance Band refers to the quantity or abundance of holes present in the valence band of a semiconductor material & Electron Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material.
How to calculate Carrier Lifetime?
The Carrier Lifetime formula is defined as carrier lifetime is defined as the average time it takes for a minority carrier to recombine. The process through which this is done is typically known as minority carrier recombination is calculated using Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band)). To calculate Carrier Lifetime, you need Proportionality for Recombination r), Holes Concentration in Valance Band (p0) & Electron Concentration in Conduction Band (n0). With our tool, you need to enter the respective value for Proportionality for Recombination, Holes Concentration in Valance Band & Electron Concentration in Conduction Band and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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