Distribution Coefficient Calculator

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✖Impurity Concentration in Solid is the amount of impurity added in order to perform doping in solid substance.ⓘ Impurity Concentration in Solid [C_solid]			+10% -10%
✖Impurity Concentration in Liquid refers to the concentration of the impurity added in liquid for doping.ⓘ Impurity Concentration in Liquid [C_L]			+10% -10%

✖The Distribution coefficient is the concentration of solute in two different types of solvents.ⓘ Distribution Coefficient [k_d]

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Formula

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Distribution Coefficient

Formula

`"k"_{"d"} = "C"_{"solid"}/"C"_{"L"}`

Example

`"0.404"="1.01e15cm⁻¹"/"2.5e15cm⁻¹"`

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Distribution Coefficient Solution

STEP 0: Pre-Calculation Summary

Formula Used

Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid
k_d = C_solid/C_L
This formula uses 3 Variables

Variables Used

Distribution Coefficient - The Distribution coefficient is the concentration of solute in two different types of solvents.
Impurity Concentration in Solid - (Measured in 1 per Meter) - Impurity Concentration in Solid is the amount of impurity added in order to perform doping in solid substance.
Impurity Concentration in Liquid - (Measured in 1 per Meter) - Impurity Concentration in Liquid refers to the concentration of the impurity added in liquid for doping.

STEP 1: Convert Input(s) to Base Unit

Impurity Concentration in Solid: 1.01E+15 1 per Centimeter --> 1.01E+17 1 per Meter (Check conversion here)
Impurity Concentration in Liquid: 2.5E+15 1 per Centimeter --> 2.5E+17 1 per Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

k_d = C_solid/C_L --> 1.01E+17/2.5E+17

Evaluating ... ...

k_d = 0.404

STEP 3: Convert Result to Output's Unit

0.404 --> No Conversion Required

FINAL ANSWER

0.404 <-- Distribution Coefficient

(Calculation completed in 00.020 seconds)

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< 20 Energy Band & Charge Carrier Calculators

Intrinsic Carrier Concentration

Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band)*exp(-Energy Gap/(2*[BoltZ]*Temperature))

Carrier Lifetime

Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))

Energy of Electron given Coulomb's Constant

Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)

Steady State Electron Concentration

Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration

Concentration in Conduction Band

Go Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function

Effective Density of State

Go Effective Density of State in Conduction Band = Electron Concentration in Conduction Band/Fermi Function

Fermi Function

Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band

Effective Density State in Valence Band

Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)

Concentration of Holes in Valence Band

Go Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)

Recombination Lifetime

Go Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1

Distribution Coefficient

Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid

Liquid Concentration

Go Impurity Concentration in Liquid = Impurity Concentration in Solid/Distribution Coefficient

Net Rate of Change in Conduction Band

Go Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)

Thermal Generation Rate

Go Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration^2)

Excess Carrier Concentration

Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime

Optical Generation Rate

Go Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime

Photoelectron Energy

Go Photoelectron Energy = [hP]*Frequency of Incident Light

Conduction Band Energy

Go Conduction Band Energy = Energy Gap+Valence Band Energy

Valence Band Energy

Go Valence Band Energy = Conduction Band Energy-Energy Gap

Energy Gap

Go Energy Gap = Conduction Band Energy-Valence Band Energy

< 15 Semiconductor Carriers Calculators

Intrinsic Carrier Concentration

Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band)*exp(-Energy Gap/(2*[BoltZ]*Temperature))

Carrier Lifetime

Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))

Radius of Nth Orbit of Electron

Go Radius of nth Orbit of Electron = ([Coulomb]*Quantum Number^2*[hP]^2)/(Mass of Particle*[Charge-e]^2)

Quantum State

Go Energy in Quantum State = (Quantum Number^2*pi^2*[hP]^2)/(2*Mass of Particle*Potential Well Length^2)

Electron Flux Density

Go Electron Flux Density = (Mean Free Path Electron/(2*Time))*Difference in Electron Concentration

Fermi Function

Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band

Effective Density State in Valence Band

Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)

Distribution Coefficient

Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid

Electron Multiplication

Go Electron Multiplication = Number of Electron Out of Region/Number of Electron in Region

Excess Carrier Concentration

Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime

Electron Current Density

Go Electron Current Density = Total Carrier Current Density-Hole Current Density

Hole Current Density

Go Hole Current Density = Total Carrier Current Density-Electron Current Density

Mean Time Spend by Hole

Go Mean Time Spend by Hole = Optical Generation Rate*Majority Carrier Decay

Photoelectron Energy

Go Photoelectron Energy = [hP]*Frequency of Incident Light

Conduction Band Energy

Go Conduction Band Energy = Energy Gap+Valence Band Energy

Distribution Coefficient Formula

Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid
k_d = C_solid/C_L

How do you find the distribution coefficient?

The ratio of solubilities in the two solvents is called the distribution coefficient, KD = C1/C2, which is an equilibrium constant with a characteristic value for any compound at a given temperature. The total amount extracted by 100 mL as 2 x 50 mL portions of ether is thus 0.92 g.

How to Calculate Distribution Coefficient?

Distribution Coefficient calculator uses Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid to calculate the Distribution Coefficient, The Distribution Coefficient formula refers to the ratio of impurity atoms that are incorporated into the crystal lattice of a semiconductor material compared to the impurity atoms that remain in the surrounding matrix. Distribution Coefficient is denoted by k_d symbol.

How to calculate Distribution Coefficient using this online calculator? To use this online calculator for Distribution Coefficient, enter Impurity Concentration in Solid (C_solid) & Impurity Concentration in Liquid (C_L) and hit the calculate button. Here is how the Distribution Coefficient calculation can be explained with given input values -> 0.404 = 1.01E+17/2.5E+17.

FAQ

What is Distribution Coefficient?

The Distribution Coefficient formula refers to the ratio of impurity atoms that are incorporated into the crystal lattice of a semiconductor material compared to the impurity atoms that remain in the surrounding matrix and is represented as k_d = C_solid/C_L or Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid. Impurity Concentration in Solid is the amount of impurity added in order to perform doping in solid substance & Impurity Concentration in Liquid refers to the concentration of the impurity added in liquid for doping.

How to calculate Distribution Coefficient?

The Distribution Coefficient formula refers to the ratio of impurity atoms that are incorporated into the crystal lattice of a semiconductor material compared to the impurity atoms that remain in the surrounding matrix is calculated using Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid. To calculate Distribution Coefficient, you need Impurity Concentration in Solid (C_solid) & Impurity Concentration in Liquid (C_L). With our tool, you need to enter the respective value for Impurity Concentration in Solid & Impurity Concentration in Liquid and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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