Payal Priya
Birsa Institute of Technology (BIT), Sindri
Payal Priya has created this Calculator and 300+ more calculators!
Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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11 Other formulas that you can solve using the same Inputs

Current flowing through the induced channel in the transistor
output current =(Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Effective voltage or overdrive voltage)*Voltage between drain and source GO
Conductance of channel of MOSFET when Vgs is given
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage) GO
Current flowing through the induced channel in the transistor when Vgs is given
output current =(Mobility of electron*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage))*Saturation voltage between drain and source GO
MOSFET as linear resistance when Vgs is given
MOSFET as linear resistance=Length of the Channel/((Mobility of electrons at the surface of channel*Oxide Capacitance*Width of the Channel)*(Voltage across the oxide-Threshold voltage)) GO
MOSFET as linear resistance when aspect ratio is given
MOSFET as linear resistance=Length of the Channel/(Mobility of electrons at the surface of channel*Oxide Capacitance*Width of the Channel*Effective voltage or overdrive voltage) GO
Conductance of channel of MOSFETs
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Voltage across the oxide GO
Magnitude of the electron charge in the channel of MOSFET
Electron Charge in channel=Oxide Capacitance*Width of the Channel*Length of the Channel*Effective voltage or overdrive voltage GO
Electric field across the length of the channel of NMOS transistor
Electric field across the length of the channel=Voltage between drain and source/Length of the Channel GO
MOSFET transconductance parameter in terms of process transconductance
MOSFET transconductance parameter=Process transconductance parameter*Aspect Ratio GO
Total capacitance between gate and channel of MOSFETs
Capacitance=Oxide Capacitance*Width of the Channel*Length of the Channel GO
Transistor aspect ratio
Aspect Ratio=Width of the Channel/Length of the Channel GO

11 Other formulas that calculate the same Output

Current entering drain terminal of MOSFET when Vgs is given
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2))) GO
Drain current in triode region of PMOS transistor
Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-modulus(Threshold voltage))*Voltage between drain and source-1/2*(Voltage between drain and source)^2) GO
Drain current
Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source GO
Current entering drain-source in triode region of NMOS
Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-Threshold voltage)*Voltage between drain and source-1/2*(Voltage between drain and source)^2) GO
Drain current when device parameter is given
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-Threshold voltage)^2*(1+Device parameter*Voltage between drain and source) GO
Current entering drain-source in triode region of NMOS when effective voltage is given
Drain current=Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source GO
Drain current when MOSFET operates as a voltage-controlled current source
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 GO
Current entering drain-source at saturation region of NMOS
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 GO
Drain current without channel-length modulation of MOSFET
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 GO
Drain current when MOSFET operates as a voltage-controlled current source in terms of Vov
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2 GO
Current entering drain-source at boundary of the saturation and triode region of NMOS
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage between drain and source)^2 GO

Current entering drain terminal of MOSFET Formula

Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source
I<sub>d</sub>=k'<sub>n</sub>*(w/L)*(V<sub>ov</sub>-1/2*V<sub>DS</sub>)*V<sub>DS</sub>
More formulas
Effective voltage of MOSFET GO
Magnitude of the electron charge in the channel of MOSFET GO
Oxide capacitance of MOSFETs GO
Total capacitance between gate and channel of MOSFETs GO
Electric field across the length of the channel of NMOS transistor GO
Electron drift velocity of the channel in NMOS transistor GO
Current flowing through the induced channel in the transistor GO
Overdrive Voltage of MOSFET GO
Current flowing through the induced channel in the transistor when Vgs is given GO
Conductance of channel of MOSFETs GO
Conductance of channel of MOSFET when Vgs is given GO
Process transconductance parameter of MOSFET GO
MOSFET transconductance parameter GO
MOSFET transconductance parameter in terms of process transconductance GO
MOSFET as linear resistance GO
Transistor aspect ratio GO
MOSFET as linear resistance when aspect ratio is given GO
MOSFET as linear resistance when Vgs is given GO
Current entering drain terminal of MOSFET when Vgs is given GO
Current entering drain terminal of MOSFET at saturation GO
Saturation voltage of MOSFET GO
Drain saturation current of MOSFET GO
Drain saturation current of MOSFET when Vgs is given GO
Differential input signal of the non-inverting configuration GO
Drain current when MOSFET operates as a voltage-controlled current source GO
Drain current when MOSFET operates as a voltage-controlled current source in terms of Vov GO
Drain current when device parameter is given GO
Positive voltage when device parameter is given in MOSFET GO
Positive voltage when the channel length is given in MOSFET GO
Output resistance of current source of MOSFET GO
Output resistance of current source when device parameter is given GO
Output resistance of current source when drain current is given GO
Drain current without channel-length modulation of MOSFET GO
Body effect in NMOS GO
Fabrication process parameter of NMOS GO
Body effect in PMOS GO

What is drain current in MOSFET?

The drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Vgs characteristic is defined as the subthreshold slope, S, and is one of the most critical performance metrics for MOSFETs in logic applications.

How much current can a MOSFET handle?

High amperage MOSFETs like the 511-STP200N3LL say they can handle 120 Amps of current.The Metal Oxide Semiconductor Field Effect Transistor, or MOSFET for short, has an extremely high input gate resistance with the current flowing through the channel between the source and drain being controlled by the gate voltage.

How to Calculate Current entering drain terminal of MOSFET?

Current entering drain terminal of MOSFET calculator uses Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source to calculate the Drain current, The current entering drain terminal of MOSFET, MOSFETs only switch current flowing in one direction; they have a diode between source and drain in the other direction (in other words, if the drain (on an N-channel device) falls below the voltage on the source, the current will flow from the source to the drain). Drain current and is denoted by Id symbol.

How to calculate Current entering drain terminal of MOSFET using this online calculator? To use this online calculator for Current entering drain terminal of MOSFET, enter Process transconductance parameter (k'n), Width of the Channel (w), Length of the Channel (L), Effective voltage or overdrive voltage (Vov) and Voltage between drain and source (VDS) and hit the calculate button. Here is how the Current entering drain terminal of MOSFET calculation can be explained with given input values -> 1.000E-4 = 2*(1E-05/3E-06)*(5-1/2*3E-06)*3E-06.

FAQ

What is Current entering drain terminal of MOSFET?
The current entering drain terminal of MOSFET, MOSFETs only switch current flowing in one direction; they have a diode between source and drain in the other direction (in other words, if the drain (on an N-channel device) falls below the voltage on the source, the current will flow from the source to the drain) and is represented as Id=k'n*(w/L)*(Vov-1/2*VDS)*VDS or Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source. Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance, Width of the Channel is the dimension of the channel of MOSFET, The length of the channel, L, which is the distance between the two n+-p junctions, , Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed and The voltage between drain and source is applied positive voltage between drain and source, having induced a channel.
How to calculate Current entering drain terminal of MOSFET?
The current entering drain terminal of MOSFET, MOSFETs only switch current flowing in one direction; they have a diode between source and drain in the other direction (in other words, if the drain (on an N-channel device) falls below the voltage on the source, the current will flow from the source to the drain) is calculated using Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source. To calculate Current entering drain terminal of MOSFET, you need Process transconductance parameter (k'n), Width of the Channel (w), Length of the Channel (L), Effective voltage or overdrive voltage (Vov) and Voltage between drain and source (VDS). With our tool, you need to enter the respective value for Process transconductance parameter, Width of the Channel, Length of the Channel, Effective voltage or overdrive voltage and Voltage between drain and source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Drain current?
In this formula, Drain current uses Process transconductance parameter, Width of the Channel, Length of the Channel, Effective voltage or overdrive voltage and Voltage between drain and source. We can use 11 other way(s) to calculate the same, which is/are as follows -
  • Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source
  • Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2)))
  • Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-Threshold voltage)*Voltage between drain and source-1/2*(Voltage between drain and source)^2)
  • Drain current=Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage between drain and source)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-Threshold voltage)^2*(1+Device parameter*Voltage between drain and source)
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2
  • Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-modulus(Threshold voltage))*Voltage between drain and source-1/2*(Voltage between drain and source)^2)
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