Current Flowing through Induced Channel in Transistor given Oxide Voltage Solution

STEP 0: Pre-Calculation Summary
Formula Used
Output Current = (Mobility of Electron*Oxide Capacitance*(Width of Channel/Length of Channel)*(Voltage across Oxide-Threshold Voltage))*Saturation Voltage between Drain and Source
io = (μe*Cox*(Wc/L)*(Vox-Vt))*Vds
This formula uses 8 Variables
Variables Used
Output Current - (Measured in Ampere) - Output Current is the current the amplifier draws from the signal source.
Mobility of Electron - (Measured in Square Meter per Volt per Second) - Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.
Oxide Capacitance - (Measured in Farad per Square Meter) - oxide capacitance is the capacitance of the parallel-plate capacitor per unit gate area.
Width of Channel - (Measured in Meter) - Width of Channel is the dimension of the channel of MOSFET.
Length of Channel - (Measured in Meter) - The length of channel, L, which is the distance between the two -p junctions.
Voltage across Oxide - (Measured in Volt) - Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.
Threshold Voltage - (Measured in Volt) - Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.
Saturation Voltage between Drain and Source - (Measured in Volt) - Saturation voltage between drain and source in a transistor is a voltage from collector and emitter required for saturation.
STEP 1: Convert Input(s) to Base Unit
Mobility of Electron: 0.012 Square Meter per Volt per Second --> 0.012 Square Meter per Volt per Second No Conversion Required
Oxide Capacitance: 0.001 Farad per Square Meter --> 0.001 Farad per Square Meter No Conversion Required
Width of Channel: 10.15 Micrometer --> 1.015E-05 Meter (Check conversion here)
Length of Channel: 3.25 Micrometer --> 3.25E-06 Meter (Check conversion here)
Voltage across Oxide: 3.775 Volt --> 3.775 Volt No Conversion Required
Threshold Voltage: 2 Volt --> 2 Volt No Conversion Required
Saturation Voltage between Drain and Source: 220 Volt --> 220 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
io = (μe*Cox*(Wc/L)*(Vox-Vt))*Vds --> (0.012*0.001*(1.015E-05/3.25E-06)*(3.775-2))*220
Evaluating ... ...
io = 0.0146347384615385
STEP 3: Convert Result to Output's Unit
0.0146347384615385 Ampere -->14.6347384615385 Milliampere (Check conversion here)
FINAL ANSWER
14.6347384615385 14.63474 Milliampere <-- Output Current
(Calculation completed in 00.020 seconds)

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Birsa Institute of Technology (BIT), Sindri
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18 Transistor Amplifier Characteristics Calculators

Current Flowing through Induced Channel in Transistor given Oxide Voltage
Go Output Current = (Mobility of Electron*Oxide Capacitance*(Width of Channel/Length of Channel)*(Voltage across Oxide-Threshold Voltage))*Saturation Voltage between Drain and Source
Overall Effective Voltage of MOSFET Transconductance
Go Effective Voltage = sqrt(2*Saturation Drain Current/(Process Transconductance Parameter*(Width of Channel/Length of Channel)))
Current Entering Drain Terminal of MOSFET at Saturation
Go Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2
Input Voltage given Signal Voltage
Go Fundamental Component Voltage = (Finite Input Resistance/(Finite Input Resistance+Signal Resistance))*Small Signal Voltage
Transconductance Parameter of MOS Transistor
Go Transconductance Parameter = Drain Current/((Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source)
Instantaneous Drain Current using Voltage between Drain and Source
Go Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source
Drain Current of Transistor
Go Drain Current = (Fundamental Component Voltage+Total Instantaneous Drain Voltage)/Drain Resistance
Total Instantaneous Drain Voltage
Go Total Instantaneous Drain Voltage = Fundamental Component Voltage-Drain Resistance*Drain Current
Input Voltage in Transistor
Go Fundamental Component Voltage = Drain Resistance*Drain Current-Total Instantaneous Drain Voltage
Transconductance of Transistor Amplifiers
Go MOSFET Primary Transconductance = (2*Drain Current)/(Voltage across Oxide-Threshold Voltage)
Signal Current in Emitter given Input Signal
Go Signal Current in Emitter = Fundamental Component Voltage/Emitter Resistance
Transconductance using Collector Current of Transistor Amplifier
Go MOSFET Primary Transconductance = Collector Current/Threshold Voltage
Input Resistance of Common-Collector Amplifier
Go Input Resistance = Fundamental Component Voltage/Base Current
Output Resistance of Common Gate Circuit given Test-Voltage
Go Finite Output Resistance = Test Voltage/Test Current
Amplifier Input of Transistor Amplifier
Go Amplifier Input = Input Resistance*Input Current
DC Current Gain of Amplifier
Go DC Current Gain = Collector Current/Base Current
Input Resistance of Common-Gate Circuit
Go Input Resistance = Test Voltage/Test Current
Test Current of Transistor Amplifier
Go Test Current = Test Voltage/Input Resistance

Current Flowing through Induced Channel in Transistor given Oxide Voltage Formula

Output Current = (Mobility of Electron*Oxide Capacitance*(Width of Channel/Length of Channel)*(Voltage across Oxide-Threshold Voltage))*Saturation Voltage between Drain and Source
io = (μe*Cox*(Wc/L)*(Vox-Vt))*Vds

Explain working of NMOS transistor.

An NMOS transistor with the voltage across gas source> threshold voltage and with a small voltage between the drain and source applied. The device acts as a resistance whose value is determined by the voltage across the gas source. Specifically, the channel conductance is proportional to the voltage across the gas source – threshold voltage, and thus Id is proportional to (voltage across the gas source – threshold voltage)voltage between the drain and source.

How to Calculate Current Flowing through Induced Channel in Transistor given Oxide Voltage?

Current Flowing through Induced Channel in Transistor given Oxide Voltage calculator uses Output Current = (Mobility of Electron*Oxide Capacitance*(Width of Channel/Length of Channel)*(Voltage across Oxide-Threshold Voltage))*Saturation Voltage between Drain and Source to calculate the Output Current, The Current Flowing through Induced Channel in Transistor given Oxide Voltage determines the strength of the electric field across the gate oxide. This electric field influences the distribution of charge carriers in the semiconductor substrate beneath the oxide. Output Current is denoted by io symbol.

How to calculate Current Flowing through Induced Channel in Transistor given Oxide Voltage using this online calculator? To use this online calculator for Current Flowing through Induced Channel in Transistor given Oxide Voltage, enter Mobility of Electron e), Oxide Capacitance (Cox), Width of Channel (Wc), Length of Channel (L), Voltage across Oxide (Vox), Threshold Voltage (Vt) & Saturation Voltage between Drain and Source (Vds) and hit the calculate button. Here is how the Current Flowing through Induced Channel in Transistor given Oxide Voltage calculation can be explained with given input values -> 14634.74 = (0.012*0.001*(1.015E-05/3.25E-06)*(3.775-2))*220.

FAQ

What is Current Flowing through Induced Channel in Transistor given Oxide Voltage?
The Current Flowing through Induced Channel in Transistor given Oxide Voltage determines the strength of the electric field across the gate oxide. This electric field influences the distribution of charge carriers in the semiconductor substrate beneath the oxide and is represented as io = (μe*Cox*(Wc/L)*(Vox-Vt))*Vds or Output Current = (Mobility of Electron*Oxide Capacitance*(Width of Channel/Length of Channel)*(Voltage across Oxide-Threshold Voltage))*Saturation Voltage between Drain and Source. Mobility of electron is defined as the magnitude of average drift velocity per unit electric field, oxide capacitance is the capacitance of the parallel-plate capacitor per unit gate area, Width of Channel is the dimension of the channel of MOSFET, The length of channel, L, which is the distance between the two -p junctions, Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide, Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals & Saturation voltage between drain and source in a transistor is a voltage from collector and emitter required for saturation.
How to calculate Current Flowing through Induced Channel in Transistor given Oxide Voltage?
The Current Flowing through Induced Channel in Transistor given Oxide Voltage determines the strength of the electric field across the gate oxide. This electric field influences the distribution of charge carriers in the semiconductor substrate beneath the oxide is calculated using Output Current = (Mobility of Electron*Oxide Capacitance*(Width of Channel/Length of Channel)*(Voltage across Oxide-Threshold Voltage))*Saturation Voltage between Drain and Source. To calculate Current Flowing through Induced Channel in Transistor given Oxide Voltage, you need Mobility of Electron e), Oxide Capacitance (Cox), Width of Channel (Wc), Length of Channel (L), Voltage across Oxide (Vox), Threshold Voltage (Vt) & Saturation Voltage between Drain and Source (Vds). With our tool, you need to enter the respective value for Mobility of Electron, Oxide Capacitance, Width of Channel, Length of Channel, Voltage across Oxide, Threshold Voltage & Saturation Voltage between Drain and Source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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