Payal Priya
Birsa Institute of Technology (BIT), Sindri
Payal Priya has created this Calculator and 300+ more calculators!
Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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11 Other formulas that you can solve using the same Inputs

Drain current
Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source GO
Conductivity in semiconductors
conductivity=Concentration of electrons in the conduction band*[Charge-e]*Mobility of holes+Majority carrier electron concentration*[Charge-e]*Mobility of electron GO
Conductivity in Semiconductors
conductivity=(Density of electron*[Charge-e]*Mobility of electron)+(Density of holes*[Charge-e]*Mobility of holes) GO
Conductivity in Extrinsic Semiconductors (for n-type)
Conductivity of extrinsic semiconductors (n-type)=Donor concentration*[Charge-e]*Mobility of electron GO
Current density due to electrons
Current density due to electrons=[Charge-e]*Density of electron*Mobility of electron*Electric Field GO
Saturation voltage between drain and source
Saturation voltage between drain and source=Gate to source voltage-Threshold voltage GO
Einstein's Equation
Volts-Equivalent of Temperature=Electron Diffusion Constant/Mobility of electron GO
Saturation drain current
Saturation drain current=[BoltZ]*((Gate to source voltage-Threshold voltage)^2) GO
Einstein Equation for electrons
Einstein Equation for electron=Mobility of electron*[BoltZ]*Temperature GO
Conductivity in Metals
conductivity=Density of electron*[Charge-e]*Mobility of electron GO
Conductivity in metals
conductivity=Number of Electrons*Mobility of electron*[Charge-e] GO

4 Other formulas that calculate the same Output

Current flowing through the induced channel in the transistor
output current =(Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Effective voltage or overdrive voltage)*Voltage between drain and source GO
Output Current For Boost Regulator (DCM)
output current =((Input voltage-Output voltage )*duty Cycle*time commutation*(duty Cycle+delta))/(2*Inductance) GO
Output Current For Buck Regulator (DCM)
output current =((Input voltage-Output voltage )*duty Cycle*time commutation*(duty Cycle+delta))/(2*Inductance) GO
Output Current For Buck-Boost Regulator (DCM)
output current =Input voltage^2*duty Cycle^2*time commutation/(2*Output voltage *Inductance) GO

Current flowing through the induced channel in the transistor when Vgs is given Formula

output current=(Mobility of electron*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage))*Saturation voltage between drain and source
i=(µ<sub>n</sub>*C<sub>ox</sub>*(w/L)*(V<sub>GS</sub> -V<sub>T</sub>))*V<sub>ds</sub>
More formulas
Effective voltage of MOSFET GO
Magnitude of the electron charge in the channel of MOSFET GO
Oxide capacitance of MOSFETs GO
Total capacitance between gate and channel of MOSFETs GO
Electric field across the length of the channel of NMOS transistor GO
Electron drift velocity of the channel in NMOS transistor GO
Current flowing through the induced channel in the transistor GO
Overdrive Voltage of MOSFET GO
Conductance of channel of MOSFETs GO
Conductance of channel of MOSFET when Vgs is given GO
Process transconductance parameter of MOSFET GO
MOSFET transconductance parameter GO
MOSFET transconductance parameter in terms of process transconductance GO
MOSFET as linear resistance GO
Transistor aspect ratio GO
MOSFET as linear resistance when aspect ratio is given GO
MOSFET as linear resistance when Vgs is given GO
Current entering drain terminal of MOSFET GO
Current entering drain terminal of MOSFET when Vgs is given GO
Current entering drain terminal of MOSFET at saturation GO
Saturation voltage of MOSFET GO
Drain saturation current of MOSFET GO
Drain saturation current of MOSFET when Vgs is given GO
Differential input signal of the non-inverting configuration GO
Drain current when MOSFET operates as a voltage-controlled current source GO
Drain current when MOSFET operates as a voltage-controlled current source in terms of Vov GO
Drain current when device parameter is given GO
Positive voltage when device parameter is given in MOSFET GO
Positive voltage when the channel length is given in MOSFET GO
Output resistance of current source of MOSFET GO
Output resistance of current source when device parameter is given GO
Output resistance of current source when drain current is given GO
Drain current without channel-length modulation of MOSFET GO
Body effect in NMOS GO
Fabrication process parameter of NMOS GO
Body effect in PMOS GO

Explain working of NMOS transistor.

An NMOS transistor with the voltage across gas source> threshold voltage and with a small voltage between the drain and source applied. The device acts as a resistance whose value is determined by the voltage across the gas source. Specifically, the channel conductance is proportional to the voltage across the gas source – threshold voltage, and thus Id is proportional to (voltage across the gas source – threshold voltage)voltage between the drain and source.

How to Calculate Current flowing through the induced channel in the transistor when Vgs is given?

Current flowing through the induced channel in the transistor when Vgs is given calculator uses output current=(Mobility of electron*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage))*Saturation voltage between drain and source to calculate the output current , The current flowing through the induced channel in the transistor when Vgs is given can be found by multiplying the charge per unit channel length by the electron drift velocity. output current and is denoted by i symbol.

How to calculate Current flowing through the induced channel in the transistor when Vgs is given using this online calculator? To use this online calculator for Current flowing through the induced channel in the transistor when Vgs is given, enter Mobility of electron n), Oxide Capacitance (Cox), Width of the Channel (w), Length of the Channel (L), Voltage across the oxide (VGS ), Threshold voltage (VT) and Saturation voltage between drain and source (Vds) and hit the calculate button. Here is how the Current flowing through the induced channel in the transistor when Vgs is given calculation can be explained with given input values -> -59840 = (100*0.017*(1E-05/3E-06)*(2-50))*220.

FAQ

What is Current flowing through the induced channel in the transistor when Vgs is given?
The current flowing through the induced channel in the transistor when Vgs is given can be found by multiplying the charge per unit channel length by the electron drift velocity and is represented as i=(µn*Cox*(w/L)*(VGS -VT))*Vds or output current=(Mobility of electron*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage))*Saturation voltage between drain and source. Mobility of electron is defined as the magnitude of average drift velocity per unit electric field, oxide capacitance is the capacitance of the parallel-plate capacitor per unit gate area , Width of the Channel is the dimension of the channel of MOSFET, The length of the channel, L, which is the distance between the two n+-p junctions, , Voltage across the oxide due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide, Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency and Saturation voltage between drain and source in a transistor is a voltage from collector and emitter required for saturation.
How to calculate Current flowing through the induced channel in the transistor when Vgs is given?
The current flowing through the induced channel in the transistor when Vgs is given can be found by multiplying the charge per unit channel length by the electron drift velocity is calculated using output current=(Mobility of electron*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage))*Saturation voltage between drain and source. To calculate Current flowing through the induced channel in the transistor when Vgs is given, you need Mobility of electron n), Oxide Capacitance (Cox), Width of the Channel (w), Length of the Channel (L), Voltage across the oxide (VGS ), Threshold voltage (VT) and Saturation voltage between drain and source (Vds). With our tool, you need to enter the respective value for Mobility of electron, Oxide Capacitance, Width of the Channel, Length of the Channel, Voltage across the oxide, Threshold voltage and Saturation voltage between drain and source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate output current ?
In this formula, output current uses Mobility of electron, Oxide Capacitance, Width of the Channel, Length of the Channel, Voltage across the oxide, Threshold voltage and Saturation voltage between drain and source. We can use 4 other way(s) to calculate the same, which is/are as follows -
  • output current =(Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Effective voltage or overdrive voltage)*Voltage between drain and source
  • output current =((Input voltage-Output voltage )*duty Cycle*time commutation*(duty Cycle+delta))/(2*Inductance)
  • output current =((Input voltage-Output voltage )*duty Cycle*time commutation*(duty Cycle+delta))/(2*Inductance)
  • output current =Input voltage^2*duty Cycle^2*time commutation/(2*Output voltage *Inductance)
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