Current Entering Drain Terminal of MOSFET at Saturation Calculator

✖Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance.ⓘ Process Transconductance Parameter [k'_n]			+10% -10%
✖Width of Channel is the dimension of the channel of MOSFET.ⓘ Width of Channel [W_c]			+10% -10%
✖The length of channel, L, which is the distance between the two -p junctions.ⓘ Length of Channel [L]			+10% -10%
✖Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed.ⓘ Effective Voltage [V_ov]			+10% -10%

✖Saturation drain current is defined as the subthreshold current and varies exponentially with gate to source voltage.ⓘ Current Entering Drain Terminal of MOSFET at Saturation [i_ds]

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Formula

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Current Entering Drain Terminal of MOSFET at Saturation

Formula

`"i"_{"ds"} = 1/2*"k'"_{"n"}*("W"_{"c"}/"L")*("V"_{"ov"})^2`

Example

`"4.724903mA"=1/2*"0.2A/V²"*("10.15μm"/"3.25μm")*("0.123V")^2`

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Current Entering Drain Terminal of MOSFET at Saturation Solution

STEP 0: Pre-Calculation Summary

Formula Used

Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2
i_ds = 1/2*k'_n*(W_c/L)*(V_ov)^2
This formula uses 5 Variables

Variables Used

Saturation Drain Current - (Measured in Ampere) - Saturation drain current is defined as the subthreshold current and varies exponentially with gate to source voltage.
Process Transconductance Parameter - (Measured in Ampere per Square Volt) - Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance.
Width of Channel - (Measured in Meter) - Width of Channel is the dimension of the channel of MOSFET.
Length of Channel - (Measured in Meter) - The length of channel, L, which is the distance between the two -p junctions.
Effective Voltage - (Measured in Volt) - Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed.

STEP 1: Convert Input(s) to Base Unit

Process Transconductance Parameter: 0.2 Ampere per Square Volt --> 0.2 Ampere per Square Volt No Conversion Required
Width of Channel: 10.15 Micrometer --> 1.015E-05 Meter (Check conversion here)
Length of Channel: 3.25 Micrometer --> 3.25E-06 Meter (Check conversion here)
Effective Voltage: 0.123 Volt --> 0.123 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

i_ds = 1/2*k'_n*(W_c/L)*(V_ov)^2 --> 1/2*0.2*(1.015E-05/3.25E-06)*(0.123)^2

Evaluating ... ...

i_ds = 0.00472490307692308

STEP 3: Convert Result to Output's Unit

0.00472490307692308 Ampere -->4.72490307692308 Milliampere (Check conversion here)

FINAL ANSWER

4.72490307692308 ≈ 4.724903 Milliampere <-- Saturation Drain Current

(Calculation completed in 00.004 seconds)

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< 18 Transistor Amplifier Characteristics Calculators

Current Flowing through Induced Channel in Transistor given Oxide Voltage

Go Output Current = (Mobility of Electron*Oxide Capacitance*(Width of Channel/Length of Channel)*(Voltage across Oxide-Threshold Voltage))*Saturation Voltage between Drain and Source

Overall Effective Voltage of MOSFET Transconductance

Go Effective Voltage = sqrt(2*Saturation Drain Current/(Process Transconductance Parameter*(Width of Channel/Length of Channel)))

Current Entering Drain Terminal of MOSFET at Saturation

Go Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2

Input Voltage given Signal Voltage

Go Fundamental Component Voltage = (Finite Input Resistance/(Finite Input Resistance+Signal Resistance))*Small Signal Voltage

Transconductance Parameter of MOS Transistor

Go Transconductance Parameter = Drain Current/((Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source)

Instantaneous Drain Current using Voltage between Drain and Source

Go Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source

Drain Current of Transistor

Go Drain Current = (Fundamental Component Voltage+Total Instantaneous Drain Voltage)/Drain Resistance

Total Instantaneous Drain Voltage

Go Total Instantaneous Drain Voltage = Fundamental Component Voltage-Drain Resistance*Drain Current

Input Voltage in Transistor

Go Fundamental Component Voltage = Drain Resistance*Drain Current-Total Instantaneous Drain Voltage

Transconductance of Transistor Amplifiers

Go MOSFET Primary Transconductance = (2*Drain Current)/(Voltage across Oxide-Threshold Voltage)

Signal Current in Emitter given Input Signal

Go Signal Current in Emitter = Fundamental Component Voltage/Emitter Resistance

Transconductance using Collector Current of Transistor Amplifier

Go MOSFET Primary Transconductance = Collector Current/Threshold Voltage

Input Resistance of Common-Collector Amplifier

Go Input Resistance = Fundamental Component Voltage/Base Current

Output Resistance of Common Gate Circuit given Test-Voltage

Go Finite Output Resistance = Test Voltage/Test Current

Amplifier Input of Transistor Amplifier

Go Amplifier Input = Input Resistance*Input Current

DC Current Gain of Amplifier

Go DC Current Gain = Collector Current/Base Current

Input Resistance of Common-Gate Circuit

Go Input Resistance = Test Voltage/Test Current

Test Current of Transistor Amplifier

Go Test Current = Test Voltage/Input Resistance

Current Entering Drain Terminal of MOSFET at Saturation Formula

Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2
i_ds = 1/2*k'_n*(W_c/L)*(V_ov)^2

What is drain current in MOSFET?

The drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Vgs characteristic is defined as the subthreshold slope, S, and is one of the most critical performance metrics for MOSFETs in logic applications.

How much current can a MOSFET handle?

High amperage MOSFETs like the 511-STP200N3LL say they can handle 120 Amps of current. The Metal Oxide Semiconductor Field Effect Transistor, or MOSFET for short, has an extremely high input gate resistance with the current flowing through the channel between the source and drain is controlled by the gate voltage.

How to Calculate Current Entering Drain Terminal of MOSFET at Saturation?

Current Entering Drain Terminal of MOSFET at Saturation calculator uses Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2 to calculate the Saturation Drain Current, The Current entering drain terminal of MOSFET at saturation is the drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Saturation Drain Current is denoted by i_ds symbol.

How to calculate Current Entering Drain Terminal of MOSFET at Saturation using this online calculator? To use this online calculator for Current Entering Drain Terminal of MOSFET at Saturation, enter Process Transconductance Parameter (k'_n), Width of Channel (W_c), Length of Channel (L) & Effective Voltage (V_ov) and hit the calculate button. Here is how the Current Entering Drain Terminal of MOSFET at Saturation calculation can be explained with given input values -> 4724.903 = 1/2*0.2*(1.015E-05/3.25E-06)*(0.123)^2.

FAQ

What is Current Entering Drain Terminal of MOSFET at Saturation?

The Current entering drain terminal of MOSFET at saturation is the drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs and is represented as i_ds = 1/2*k'_n*(W_c/L)*(V_ov)^2 or Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2. Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance, Width of Channel is the dimension of the channel of MOSFET, The length of channel, L, which is the distance between the two -p junctions & Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed.

How to calculate Current Entering Drain Terminal of MOSFET at Saturation?

The Current entering drain terminal of MOSFET at saturation is the drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs is calculated using Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2. To calculate Current Entering Drain Terminal of MOSFET at Saturation, you need Process Transconductance Parameter (k'_n), Width of Channel (W_c), Length of Channel (L) & Effective Voltage (V_ov). With our tool, you need to enter the respective value for Process Transconductance Parameter, Width of Channel, Length of Channel & Effective Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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