Drain Current from Source to Drain Calculator

✖Width of junction is the parameter which signifies how wide is the base junction of any analog electronics element.ⓘ Width of Junction [W]			+10% -10%
✖Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.ⓘ Inversion Layer Charge [Q_p]			+10% -10%
✖Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field.ⓘ Mobility of Holes in Channel [μ_p]			+10% -10%
✖Horizontal Component of Electric Field in Channel is the strength of the electric field that exists in the material under the gate oxide layer, in the region where the inversion layer is formed.ⓘ Horizontal Component of Electric Field in Channel [E_y]			+10% -10%

✖Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).ⓘ Drain Current from Source to Drain [I_d]

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Formula

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Drain Current from Source to Drain

Formula

`"I"_{"d"} = ("W"*"Q"_{"p"}*"μ"_{"p"}*"E"_{"y"})`

Example

`"29.59649mA"=("1.19m"*"0.0017C/m²"*"2.66m²/V*s"*"5.5V/m")`

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Drain Current from Source to Drain Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)
I_d = (W*Q_p*μ_p*E_y)
This formula uses 5 Variables

Variables Used

Drain Current - (Measured in Ampere) - Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
Width of Junction - (Measured in Meter) - Width of junction is the parameter which signifies how wide is the base junction of any analog electronics element.
Inversion Layer Charge - (Measured in Coulomb per Square Meter) - Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.
Mobility of Holes in Channel - (Measured in Square Meter per Volt per Second) - Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field.
Horizontal Component of Electric Field in Channel - (Measured in Volt per Meter) - Horizontal Component of Electric Field in Channel is the strength of the electric field that exists in the material under the gate oxide layer, in the region where the inversion layer is formed.

STEP 1: Convert Input(s) to Base Unit

Width of Junction: 1.19 Meter --> 1.19 Meter No Conversion Required
Inversion Layer Charge: 0.0017 Coulomb per Square Meter --> 0.0017 Coulomb per Square Meter No Conversion Required
Mobility of Holes in Channel: 2.66 Square Meter per Volt per Second --> 2.66 Square Meter per Volt per Second No Conversion Required
Horizontal Component of Electric Field in Channel: 5.5 Volt per Meter --> 5.5 Volt per Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_d = (W*Q_p*μ_p*E_y) --> (1.19*0.0017*2.66*5.5)

Evaluating ... ...

I_d = 0.02959649

STEP 3: Convert Result to Output's Unit

0.02959649 Ampere -->29.59649 Milliampere (Check conversion here)

FINAL ANSWER

29.59649 Milliampere <-- Drain Current

(Calculation completed in 00.007 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » P-Channel Enhancement » Drain Current from Source to Drain

Credits

Created by Aman Dhussawat

GURU TEGH BAHADUR INSTITUTE OF TECHNOLOGY (GTBIT), NEW DELHI

Aman Dhussawat has created this Calculator and 50+ more calculators!

Verified by Parminder Singh

Chandigarh University (CU), Punjab

Parminder Singh has verified this Calculator and 500+ more calculators!

< 15 P-Channel Enhancement Calculators

Overall Drain Current of PMOS Transistor

Go Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))

Drain Current in Triode Region of PMOS Transistor

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)

Body Effect in PMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Drain Current in Triode Region of PMOS Transistor given Vsd

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source

Drain Current in Saturation Region of PMOS Transistor

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Backgate Effect Parameter in PMOS

Go Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance

Drain Current from Source to Drain

Go Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)

Inversion Layer Charge at Pinch-Off Condition in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)

Drain Current in Saturation Region of PMOS Transistor given Vov

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Inversion Layer Charge in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)

Current in Inversion Channel of PMOS

Go Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)

Current in Inversion Channel of PMOS given Mobility

Go Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel

Overdrive Voltage of PMOS

Go Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)

Process Transconductance Parameter of PMOS

Go Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance

Transit Time of PNP Transistor

Go Transit Time = Base Width^2/(2*Diffusion Constant For PNP)

Drain Current from Source to Drain Formula

Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)
I_d = (W*Q_p*μ_p*E_y)

What is the definition of drift velocity and relaxation time?

Average relaxation time is the time between two successive collisions of the electrons in a conductor and drift velocity is the average velocity with which the electrons get drifted towards the positive terminal of the conductor in an electric field.

How to Calculate Drain Current from Source to Drain?

Drain Current from Source to Drain calculator uses Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel) to calculate the Drain Current, The Drain current from source to drain in saturation region of PMOS transistor given Vov, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation. Drain Current is denoted by I_d symbol.

How to calculate Drain Current from Source to Drain using this online calculator? To use this online calculator for Drain Current from Source to Drain, enter Width of Junction (W), Inversion Layer Charge (Q_p), Mobility of Holes in Channel (μ_p) & Horizontal Component of Electric Field in Channel (E_y) and hit the calculate button. Here is how the Drain Current from Source to Drain calculation can be explained with given input values -> 29596.49 = (1.19*0.0017*2.66*5.5).

FAQ

What is Drain Current from Source to Drain?

The Drain current from source to drain in saturation region of PMOS transistor given Vov, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation and is represented as I_d = (W*Q_p*μ_p*E_y) or Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel). Width of junction is the parameter which signifies how wide is the base junction of any analog electronics element, Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode, Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field & Horizontal Component of Electric Field in Channel is the strength of the electric field that exists in the material under the gate oxide layer, in the region where the inversion layer is formed.

How to calculate Drain Current from Source to Drain?

The Drain current from source to drain in saturation region of PMOS transistor given Vov, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation is calculated using Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel). To calculate Drain Current from Source to Drain, you need Width of Junction (W), Inversion Layer Charge (Q_p), Mobility of Holes in Channel (μ_p) & Horizontal Component of Electric Field in Channel (E_y). With our tool, you need to enter the respective value for Width of Junction, Inversion Layer Charge, Mobility of Holes in Channel & Horizontal Component of Electric Field in Channel and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Current?

In this formula, Drain Current uses Width of Junction, Inversion Layer Charge, Mobility of Holes in Channel & Horizontal Component of Electric Field in Channel. We can use 4 other way(s) to calculate the same, which is/are as follows -

Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)
Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source
Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))
Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)

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