Payal Priya
Birsa Institute of Technology (BIT), Sindri
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Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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11 Other formulas that you can solve using the same Inputs

Conductance of channel of MOSFET when Vgs is given
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage) GO
Current flowing through the induced channel in the transistor when Vgs is given
output current =(Mobility of electron*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage))*Saturation voltage between drain and source GO
MOSFET as linear resistance when Vgs is given
MOSFET as linear resistance=Length of the Channel/((Mobility of electrons at the surface of channel*Oxide Capacitance*Width of the Channel)*(Voltage across the oxide-Threshold voltage)) GO
Drain current
Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source GO
Conductance of channel of MOSFETs
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Voltage across the oxide GO
MOSFET transconductance parameter
MOSFET transconductance parameter=Mobility of electrons at the surface of channel*Oxide Capacitance*Aspect Ratio GO
Saturation voltage between drain and source
Saturation voltage between drain and source=Gate to source voltage-Threshold voltage GO
MOSFET transconductance parameter in terms of process transconductance
MOSFET transconductance parameter=Process transconductance parameter*Aspect Ratio GO
Effective voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Overdrive Voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Saturation drain current
Saturation drain current=[BoltZ]*((Gate to source voltage-Threshold voltage)^2) GO

6 Other formulas that calculate the same Output

Drain saturation current of MOSFET when Vgs is given
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)^2 GO
Current entering drain terminal of MOSFET at saturation
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2 GO
Drain saturation current of MOSFET
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2 GO
Drain current in the saturation region of PMOS transistor when V<sub>ov</sub> is given
Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2 GO
Current entering drain-source at saturation region of NMOS when effective voltage is given
Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2 GO
Saturation drain current
Saturation drain current=[BoltZ]*((Gate to source voltage-Threshold voltage)^2) GO

Drain current in the saturation region of PMOS transistor Formula

Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-modulus(Threshold voltage))^2
I<sub>ds</sub>=1/2*k'<sub>n</sub>*AV*(V<sub>GS</sub> -modulus(V<sub>T</sub>))^2
More formulas
Transistor transconductance parameter of PMOS GO
Drain current in triode region of PMOS transistor GO
Drain current in triode region of PMOS transistor when V<sub>SD</sub> is given GO
Drain current in the saturation region of PMOS transistor when V<sub>ov</sub> is given GO
Overall drain current of PMOS transistor GO
Overdrive voltage of PMOS GO

What is drain current in MOSFET?

The drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Vgs characteristic is defined as the subthreshold slope, S, and is one of the most critical performance metrics for MOSFETs in logic applications.

Which way does current flow in a PMOS?

In an NMOS electrons are the charge carriers. So electrons travel from Source to Drain (meaning the current goes from Drain > Source.) In a PMOS holes are the charge carries. So holes travel from Source to Drain.

How to Calculate Drain current in the saturation region of PMOS transistor?

Drain current in the saturation region of PMOS transistor calculator uses Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-modulus(Threshold voltage))^2 to calculate the Saturation drain current, The Drain current in the saturation region of PMOS transistor, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation. Saturation drain current and is denoted by Ids symbol.

How to calculate Drain current in the saturation region of PMOS transistor using this online calculator? To use this online calculator for Drain current in the saturation region of PMOS transistor, enter Process transconductance parameter (k'n), Aspect Ratio (AV), Voltage across the oxide (VGS ) and Threshold voltage (VT) and hit the calculate button. Here is how the Drain current in the saturation region of PMOS transistor calculation can be explained with given input values -> 11520 = 1/2*2*5*(2-modulus(50))^2.

FAQ

What is Drain current in the saturation region of PMOS transistor?
The Drain current in the saturation region of PMOS transistor, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation and is represented as Ids=1/2*k'n*AV*(VGS -modulus(VT))^2 or Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-modulus(Threshold voltage))^2. Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance, Aspect Ratio is the ratio of the .width of the channel to the length of the channel, Voltage across the oxide due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide and Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency.
How to calculate Drain current in the saturation region of PMOS transistor?
The Drain current in the saturation region of PMOS transistor, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation is calculated using Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-modulus(Threshold voltage))^2. To calculate Drain current in the saturation region of PMOS transistor, you need Process transconductance parameter (k'n), Aspect Ratio (AV), Voltage across the oxide (VGS ) and Threshold voltage (VT). With our tool, you need to enter the respective value for Process transconductance parameter, Aspect Ratio, Voltage across the oxide and Threshold voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Saturation drain current?
In this formula, Saturation drain current uses Process transconductance parameter, Aspect Ratio, Voltage across the oxide and Threshold voltage. We can use 6 other way(s) to calculate the same, which is/are as follows -
  • Saturation drain current=[BoltZ]*((Gate to source voltage-Threshold voltage)^2)
  • Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2
  • Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2
  • Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)^2
  • Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2
  • Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2
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